JPH0249437A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPH0249437A
JPH0249437A JP6493989A JP6493989A JPH0249437A JP H0249437 A JPH0249437 A JP H0249437A JP 6493989 A JP6493989 A JP 6493989A JP 6493989 A JP6493989 A JP 6493989A JP H0249437 A JPH0249437 A JP H0249437A
Authority
JP
Japan
Prior art keywords
gate electrode
schottky gate
forming
schottky
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6493989A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0515304B2 (OSRAM
Inventor
Naoki Yokoyama
直樹 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6493989A priority Critical patent/JPH0249437A/ja
Publication of JPH0249437A publication Critical patent/JPH0249437A/ja
Publication of JPH0515304B2 publication Critical patent/JPH0515304B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP6493989A 1989-03-18 1989-03-18 半導体装置の製造方法 Granted JPH0249437A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6493989A JPH0249437A (ja) 1989-03-18 1989-03-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6493989A JPH0249437A (ja) 1989-03-18 1989-03-18 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55189544A Division JPS57113289A (en) 1980-12-30 1980-12-30 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPH0249437A true JPH0249437A (ja) 1990-02-19
JPH0515304B2 JPH0515304B2 (OSRAM) 1993-03-01

Family

ID=13272503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6493989A Granted JPH0249437A (ja) 1989-03-18 1989-03-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH0249437A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2018037530A1 (ja) * 2016-08-25 2018-08-23 三菱電機株式会社 半導体装置およびその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212583A (en) * 1975-07-18 1977-01-31 Sanyo Electric Co Ltd Field effect transistor
JPS5390878A (en) * 1977-01-21 1978-08-10 Nec Corp Manufacture of schottky barrier gate field effect transistor
JPS53119866U (OSRAM) * 1977-02-28 1978-09-22
JPS57113289A (en) * 1980-12-30 1982-07-14 Fujitsu Ltd Semiconductor device and its manufacture
JPH0219975A (ja) * 1988-07-08 1990-01-23 Fujitsu Ltd Ｃａｄシステムにおける操作復元処理方式

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212583A (en) * 1975-07-18 1977-01-31 Sanyo Electric Co Ltd Field effect transistor
JPS5390878A (en) * 1977-01-21 1978-08-10 Nec Corp Manufacture of schottky barrier gate field effect transistor
JPS53119866U (OSRAM) * 1977-02-28 1978-09-22
JPS57113289A (en) * 1980-12-30 1982-07-14 Fujitsu Ltd Semiconductor device and its manufacture
JPH0219975A (ja) * 1988-07-08 1990-01-23 Fujitsu Ltd Ｃａｄシステムにおける操作復元処理方式

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2018037530A1 (ja) * 2016-08-25 2018-08-23 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0515304B2 (OSRAM) 1993-03-01

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