JPH0247853B2 - - Google Patents
Info
- Publication number
- JPH0247853B2 JPH0247853B2 JP57052775A JP5277582A JPH0247853B2 JP H0247853 B2 JPH0247853 B2 JP H0247853B2 JP 57052775 A JP57052775 A JP 57052775A JP 5277582 A JP5277582 A JP 5277582A JP H0247853 B2 JPH0247853 B2 JP H0247853B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductive film
- conductivity type
- window
- base region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 229910016006 MoSi Inorganic materials 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 phosphorus ions Chemical class 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5277582A JPS58169971A (ja) | 1982-03-30 | 1982-03-30 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5277582A JPS58169971A (ja) | 1982-03-30 | 1982-03-30 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58169971A JPS58169971A (ja) | 1983-10-06 |
| JPH0247853B2 true JPH0247853B2 (ko) | 1990-10-23 |
Family
ID=12924230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5277582A Granted JPS58169971A (ja) | 1982-03-30 | 1982-03-30 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58169971A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3230050A1 (de) * | 1982-08-12 | 1984-02-16 | Siemens AG, 1000 Berlin und 8000 München | Integrierte halbleiterschaltung mit bipolaren bauelementen und verfahren zur herstellung derselben |
| US5077227A (en) * | 1986-06-03 | 1991-12-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| JP2692292B2 (ja) * | 1989-09-02 | 1997-12-17 | 富士電機株式会社 | 集積回路装置用縦形バイポーラトランジスタ |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5690561A (en) * | 1979-12-22 | 1981-07-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5735370A (en) * | 1980-08-12 | 1982-02-25 | Nec Corp | Semiconductor device |
| JPS5843573A (ja) * | 1981-09-08 | 1983-03-14 | Matsushita Electric Ind Co Ltd | バイポ−ラトランジスタ |
| JPS58142573A (ja) * | 1982-02-19 | 1983-08-24 | Hitachi Ltd | 半導体集積回路およびその製造方法 |
-
1982
- 1982-03-30 JP JP5277582A patent/JPS58169971A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5690561A (en) * | 1979-12-22 | 1981-07-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5735370A (en) * | 1980-08-12 | 1982-02-25 | Nec Corp | Semiconductor device |
| JPS5843573A (ja) * | 1981-09-08 | 1983-03-14 | Matsushita Electric Ind Co Ltd | バイポ−ラトランジスタ |
| JPS58142573A (ja) * | 1982-02-19 | 1983-08-24 | Hitachi Ltd | 半導体集積回路およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58169971A (ja) | 1983-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS62290173A (ja) | 半導体集積回路装置の製造方法 | |
| JPH0247853B2 (ko) | ||
| EP0142186B1 (en) | Method of manufacturing a pattern of conductive material | |
| JPS5918874B2 (ja) | ハンドウタイソウチノセイゾウホウホウ | |
| JP3173114B2 (ja) | 薄膜トランジスタ | |
| JPS6252950B2 (ko) | ||
| JPS59977B2 (ja) | 絶縁ゲ−ト型集積回路 | |
| JPS5923476B2 (ja) | 半導体装置の製造方法 | |
| JPH1064898A (ja) | 半導体装置の製造方法 | |
| JPH0243336B2 (ko) | ||
| JPS6220711B2 (ko) | ||
| JPS5940571A (ja) | 半導体装置 | |
| JPS641063B2 (ko) | ||
| JP2594697B2 (ja) | 半導体装置の製造方法 | |
| JP2745946B2 (ja) | 半導体集積回路の製造方法 | |
| JP2654056B2 (ja) | 半導体装置の製造方法 | |
| JP2630616B2 (ja) | 半導体装置の製造方法 | |
| JPS5826177B2 (ja) | 半導体装置の製造方法 | |
| JPH0369168A (ja) | 薄膜電界効果トランジスタ | |
| JPS59121978A (ja) | 半導体装置の製造方法 | |
| JPS58170030A (ja) | 半導体装置の製造方法 | |
| JP2624365B2 (ja) | 半導体装置の製造方法 | |
| JPH0567623A (ja) | 半導体装置の製造方法 | |
| JPH06104276A (ja) | 半導体装置およびその製造方法 | |
| JPS6040696B2 (ja) | 半導体装置の製造方法 |