JPS6220711B2 - - Google Patents
Info
- Publication number
- JPS6220711B2 JPS6220711B2 JP54167327A JP16732779A JPS6220711B2 JP S6220711 B2 JPS6220711 B2 JP S6220711B2 JP 54167327 A JP54167327 A JP 54167327A JP 16732779 A JP16732779 A JP 16732779A JP S6220711 B2 JPS6220711 B2 JP S6220711B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- insulating film
- film
- platinum
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 34
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 27
- 229910052697 platinum Inorganic materials 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- 239000000377 silicon dioxide Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16732779A JPS5690561A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16732779A JPS5690561A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5690561A JPS5690561A (en) | 1981-07-22 |
| JPS6220711B2 true JPS6220711B2 (ko) | 1987-05-08 |
Family
ID=15847684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16732779A Granted JPS5690561A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5690561A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0666822U (ja) * | 1993-03-01 | 1994-09-20 | トヨタ車体株式会社 | ダイクッションピンの圧力制御装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58169971A (ja) * | 1982-03-30 | 1983-10-06 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JPS5961179A (ja) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | バイポ−ラ半導体装置の製造方法 |
| GB2172744B (en) * | 1985-03-23 | 1989-07-19 | Stc Plc | Semiconductor devices |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53123083A (en) * | 1977-04-01 | 1978-10-27 | Nippon Telegr & Teleph Corp <Ntt> | Production of semiconductor device |
-
1979
- 1979-12-22 JP JP16732779A patent/JPS5690561A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53123083A (en) * | 1977-04-01 | 1978-10-27 | Nippon Telegr & Teleph Corp <Ntt> | Production of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0666822U (ja) * | 1993-03-01 | 1994-09-20 | トヨタ車体株式会社 | ダイクッションピンの圧力制御装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5690561A (en) | 1981-07-22 |
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