JPH0245332B2 - - Google Patents
Info
- Publication number
- JPH0245332B2 JPH0245332B2 JP55125149A JP12514980A JPH0245332B2 JP H0245332 B2 JPH0245332 B2 JP H0245332B2 JP 55125149 A JP55125149 A JP 55125149A JP 12514980 A JP12514980 A JP 12514980A JP H0245332 B2 JPH0245332 B2 JP H0245332B2
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- film
- forming
- manufacturing
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55125149A JPS5749239A (en) | 1980-09-09 | 1980-09-09 | Manufacture of gaas device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55125149A JPS5749239A (en) | 1980-09-09 | 1980-09-09 | Manufacture of gaas device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5749239A JPS5749239A (en) | 1982-03-23 |
JPH0245332B2 true JPH0245332B2 (enrdf_load_stackoverflow) | 1990-10-09 |
Family
ID=14903074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55125149A Granted JPS5749239A (en) | 1980-09-09 | 1980-09-09 | Manufacture of gaas device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5749239A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121833A (ja) * | 1982-12-27 | 1984-07-14 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5247675A (en) * | 1975-10-14 | 1977-04-15 | Matsushita Electric Ind Co Ltd | Process for production of semiconductor device |
-
1980
- 1980-09-09 JP JP55125149A patent/JPS5749239A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5749239A (en) | 1982-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4863879A (en) | Method of manufacturing self-aligned GaAs MESFET | |
US4396437A (en) | Selective encapsulation, controlled atmosphere annealing for III-V semiconductor device fabrication | |
US3912546A (en) | Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor | |
US4259779A (en) | Method of making radiation resistant MOS transistor | |
JPH0245332B2 (enrdf_load_stackoverflow) | ||
JPH04132232A (ja) | 電界効果トランジスタおよびその製造方法 | |
JPH0212927A (ja) | Mes fetの製造方法 | |
JPH0249012B2 (enrdf_load_stackoverflow) | ||
JPS59181066A (ja) | 半導体装置の製造方法 | |
JP2528660B2 (ja) | 化合物半導体導電層の形成方法 | |
JPH0235463B2 (enrdf_load_stackoverflow) | ||
JP3035941B2 (ja) | ▲iii▼―▲v▼族化合物半導体装置の製造方法 | |
JPS6190470A (ja) | 化合物半導体装置の製造方法 | |
JPS6142963A (ja) | 半導体装置の製造方法 | |
JPH01260816A (ja) | 化合物半導体装置の製造方法 | |
JPS6347982A (ja) | 半導体装置 | |
JPH08124939A (ja) | 半導体装置の製造方法 | |
JPS6216520A (ja) | 半導体装置の製造方法 | |
JPH03278464A (ja) | 半導体装置の製造方法 | |
JPS62291070A (ja) | 半導体装置の製造方法 | |
JPH0380542A (ja) | 半導体集積回路装置 | |
JPH0260215B2 (enrdf_load_stackoverflow) | ||
JPS61144822A (ja) | GaAs導電層の形成方法 | |
JPH01243418A (ja) | 半導体装置の製造方法 | |
Cook Jr et al. | Radiation hardened MIS devices |