JPS6410931B2 - - Google Patents
Info
- Publication number
- JPS6410931B2 JPS6410931B2 JP13587583A JP13587583A JPS6410931B2 JP S6410931 B2 JPS6410931 B2 JP S6410931B2 JP 13587583 A JP13587583 A JP 13587583A JP 13587583 A JP13587583 A JP 13587583A JP S6410931 B2 JPS6410931 B2 JP S6410931B2
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- metal film
- mesfet
- annealing
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13587583A JPS6028229A (ja) | 1983-07-27 | 1983-07-27 | 化合物半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13587583A JPS6028229A (ja) | 1983-07-27 | 1983-07-27 | 化合物半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6028229A JPS6028229A (ja) | 1985-02-13 |
| JPS6410931B2 true JPS6410931B2 (enrdf_load_stackoverflow) | 1989-02-22 |
Family
ID=15161808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13587583A Granted JPS6028229A (ja) | 1983-07-27 | 1983-07-27 | 化合物半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6028229A (enrdf_load_stackoverflow) |
-
1983
- 1983-07-27 JP JP13587583A patent/JPS6028229A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6028229A (ja) | 1985-02-13 |
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