JPS5749239A - Manufacture of gaas device - Google Patents
Manufacture of gaas deviceInfo
- Publication number
- JPS5749239A JPS5749239A JP55125149A JP12514980A JPS5749239A JP S5749239 A JPS5749239 A JP S5749239A JP 55125149 A JP55125149 A JP 55125149A JP 12514980 A JP12514980 A JP 12514980A JP S5749239 A JPS5749239 A JP S5749239A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2 film
- ions
- opened
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55125149A JPS5749239A (en) | 1980-09-09 | 1980-09-09 | Manufacture of gaas device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55125149A JPS5749239A (en) | 1980-09-09 | 1980-09-09 | Manufacture of gaas device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5749239A true JPS5749239A (en) | 1982-03-23 |
JPH0245332B2 JPH0245332B2 (enrdf_load_stackoverflow) | 1990-10-09 |
Family
ID=14903074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55125149A Granted JPS5749239A (en) | 1980-09-09 | 1980-09-09 | Manufacture of gaas device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5749239A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121833A (ja) * | 1982-12-27 | 1984-07-14 | Toshiba Corp | 半導体装置の製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5247675A (en) * | 1975-10-14 | 1977-04-15 | Matsushita Electric Ind Co Ltd | Process for production of semiconductor device |
-
1980
- 1980-09-09 JP JP55125149A patent/JPS5749239A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5247675A (en) * | 1975-10-14 | 1977-04-15 | Matsushita Electric Ind Co Ltd | Process for production of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121833A (ja) * | 1982-12-27 | 1984-07-14 | Toshiba Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0245332B2 (enrdf_load_stackoverflow) | 1990-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6482671A (en) | Manufacture of mis field-effect transistor | |
JPH0358177B2 (enrdf_load_stackoverflow) | ||
US4712291A (en) | Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs | |
JPS57112079A (en) | Field-effect semiconductor device | |
JPS5749239A (en) | Manufacture of gaas device | |
JPS56155531A (en) | Manufacture of semiconductor device | |
JPS6354231B2 (enrdf_load_stackoverflow) | ||
JPS574169A (en) | Gaas field-effect transistor | |
JPS54107273A (en) | Production of field effect transistor | |
JPS57106080A (en) | Manufacture of gaas field effect transistor | |
JPS55151370A (en) | Field effect transistor and fabricating method of the same | |
JPS55165679A (en) | Preparation of semiconductor device | |
JPH028457B2 (enrdf_load_stackoverflow) | ||
JPS55105376A (en) | Manufacture process of semiconductor device | |
JPS57114284A (en) | Field effect transistor | |
JPS56160071A (en) | Manufacture of insulated gate type field effect transistor | |
JPS57188878A (en) | Semiconductor device | |
JPS5720431A (en) | Manufacture of gaas semiconductor device | |
JPS6461019A (en) | Manufacture of compound semiconductor device | |
JPS5577173A (en) | Preparation of insulating gate-type electric field- effective transistor | |
JPS5737882A (en) | Compound semiconductor device and production thereof | |
JPS6464358A (en) | Schottky-type diode | |
JPS6088477A (ja) | 半導体装置の製造方法 | |
JPS57172769A (en) | Manufacture of inp insulating gate-type field effect transistor | |
JPH01158778A (ja) | 半導体装置の製造方法 |