JPH0244150B2 - - Google Patents
Info
- Publication number
- JPH0244150B2 JPH0244150B2 JP59102865A JP10286584A JPH0244150B2 JP H0244150 B2 JPH0244150 B2 JP H0244150B2 JP 59102865 A JP59102865 A JP 59102865A JP 10286584 A JP10286584 A JP 10286584A JP H0244150 B2 JPH0244150 B2 JP H0244150B2
- Authority
- JP
- Japan
- Prior art keywords
- input
- resistor
- transistor
- protection
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59102865A JPS60246665A (ja) | 1984-05-22 | 1984-05-22 | 入力保護装置 |
| EP85106300A EP0162460B1 (en) | 1984-05-22 | 1985-05-22 | Integrated circuit with an input protective device |
| DE8585106300T DE3583886D1 (de) | 1984-05-22 | 1985-05-22 | Integrierte schaltung mit einer eingangsschutzanordnung. |
| US06/736,728 US4739438A (en) | 1984-05-22 | 1985-05-22 | Integrated circuit with an improved input protective device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59102865A JPS60246665A (ja) | 1984-05-22 | 1984-05-22 | 入力保護装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60246665A JPS60246665A (ja) | 1985-12-06 |
| JPH0244150B2 true JPH0244150B2 (enExample) | 1990-10-02 |
Family
ID=14338801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59102865A Granted JPS60246665A (ja) | 1984-05-22 | 1984-05-22 | 入力保護装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4739438A (enExample) |
| EP (1) | EP0162460B1 (enExample) |
| JP (1) | JPS60246665A (enExample) |
| DE (1) | DE3583886D1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61292965A (ja) * | 1985-06-21 | 1986-12-23 | Hitachi Ltd | 半導体集積回路装置 |
| JPS62200767A (ja) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Mos型半導体装置 |
| KR900008746B1 (ko) * | 1986-11-19 | 1990-11-29 | 삼성전자 주식회사 | 접합 파괴장치 반도체장치 |
| IT1215131B (it) * | 1986-12-03 | 1990-01-31 | Sgs Microelettronica Spa | Protezione dei circuiti integrati contro scariche elettrostatiche |
| JPH0616558B2 (ja) * | 1987-01-28 | 1994-03-02 | 三菱電機株式会社 | 半導体装置の入力保護装置 |
| US4855620A (en) * | 1987-11-18 | 1989-08-08 | Texas Instruments Incorporated | Output buffer with improved ESD protection |
| US5196913A (en) * | 1988-07-11 | 1993-03-23 | Samsung Electronics Co., Ltd. | Input protection device for improving of delay time on input stage in semi-conductor devices |
| DE69031562T2 (de) * | 1989-05-17 | 1998-03-12 | Sarnoff Corp | Durch eine niedrige spannung auslösbare rückstellungsanordnung |
| US5043782A (en) * | 1990-05-08 | 1991-08-27 | David Sarnoff Research Center, Inc. | Low voltage triggered snap-back device |
| GB2257685A (en) * | 1991-06-01 | 1993-01-20 | James Thomas Engineering Limit | Tower support systems |
| KR930005184A (ko) * | 1991-08-21 | 1993-03-23 | 김광호 | 정전기 전압 방지용 반도체 장치 |
| JPH05298889A (ja) * | 1992-04-15 | 1993-11-12 | Nec Corp | 保護回路 |
| US5907462A (en) * | 1994-09-07 | 1999-05-25 | Texas Instruments Incorporated | Gate coupled SCR for ESD protection circuits |
| US5729419A (en) * | 1995-11-20 | 1998-03-17 | Integrated Device Technology, Inc. | Changed device model electrostatic discharge protection circuit for output drivers and method of implementing same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3777216A (en) * | 1972-10-02 | 1973-12-04 | Motorola Inc | Avalanche injection input protection circuit |
| US3819952A (en) * | 1973-01-29 | 1974-06-25 | Mitsubishi Electric Corp | Semiconductor device |
| US3967295A (en) * | 1975-04-03 | 1976-06-29 | Rca Corporation | Input transient protection for integrated circuit element |
| JPS6048106B2 (ja) * | 1979-12-24 | 1985-10-25 | 富士通株式会社 | 半導体集積回路 |
| EP0106417B1 (en) * | 1982-10-20 | 1988-12-28 | Koninklijke Philips Electronics N.V. | Integrated circuit comprising an input protection device |
-
1984
- 1984-05-22 JP JP59102865A patent/JPS60246665A/ja active Granted
-
1985
- 1985-05-22 US US06/736,728 patent/US4739438A/en not_active Expired - Lifetime
- 1985-05-22 DE DE8585106300T patent/DE3583886D1/de not_active Expired - Lifetime
- 1985-05-22 EP EP85106300A patent/EP0162460B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0162460B1 (en) | 1991-08-28 |
| DE3583886D1 (de) | 1991-10-02 |
| EP0162460A2 (en) | 1985-11-27 |
| JPS60246665A (ja) | 1985-12-06 |
| EP0162460A3 (en) | 1986-12-10 |
| US4739438A (en) | 1988-04-19 |
Similar Documents
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|---|---|---|
| JPH0244150B2 (enExample) | ||
| US3967988A (en) | Diffusion guarded metal-oxide-silicon field effect transistors | |
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| JPS629228B2 (enExample) | ||
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| JPH0379874B2 (enExample) | ||
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| JP3178855B2 (ja) | 半導体素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |