JPH0241910B2 - - Google Patents

Info

Publication number
JPH0241910B2
JPH0241910B2 JP59131464A JP13146484A JPH0241910B2 JP H0241910 B2 JPH0241910 B2 JP H0241910B2 JP 59131464 A JP59131464 A JP 59131464A JP 13146484 A JP13146484 A JP 13146484A JP H0241910 B2 JPH0241910 B2 JP H0241910B2
Authority
JP
Japan
Prior art keywords
type
substrate
layer
insulating film
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59131464A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6110268A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59131464A priority Critical patent/JPS6110268A/ja
Publication of JPS6110268A publication Critical patent/JPS6110268A/ja
Publication of JPH0241910B2 publication Critical patent/JPH0241910B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59131464A 1984-06-26 1984-06-26 相補型ｍｏｓ半導体装置の製造方法 Granted JPS6110268A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59131464A JPS6110268A (ja) 1984-06-26 1984-06-26 相補型ｍｏｓ半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59131464A JPS6110268A (ja) 1984-06-26 1984-06-26 相補型ｍｏｓ半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6110268A JPS6110268A (ja) 1986-01-17
JPH0241910B2 true JPH0241910B2 (OSRAM) 1990-09-19

Family

ID=15058570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59131464A Granted JPS6110268A (ja) 1984-06-26 1984-06-26 相補型ｍｏｓ半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6110268A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04212826A (ja) * 1990-09-27 1992-08-04 Fanuc Ltd 記憶装置を有する金型と成形条件設定及び管理方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0821681B2 (ja) * 1986-06-18 1996-03-04 株式会社日立製作所 半導体集積回路装置の製造方法
KR950015013B1 (ko) * 1987-10-08 1995-12-21 마쯔시다 덴끼 산교 가부시끼가이샤 반도체 장치 및 그 제조 방법
JP2897215B2 (ja) * 1988-07-15 1999-05-31 ソニー株式会社 半導体装置の製造方法
JP2609743B2 (ja) * 1990-06-28 1997-05-14 三菱電機株式会社 半導体装置
JPH07176701A (ja) * 1993-12-17 1995-07-14 Nec Corp 半導体装置とその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04212826A (ja) * 1990-09-27 1992-08-04 Fanuc Ltd 記憶装置を有する金型と成形条件設定及び管理方法

Also Published As

Publication number Publication date
JPS6110268A (ja) 1986-01-17

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term