JPH0231495B2 - - Google Patents
Info
- Publication number
- JPH0231495B2 JPH0231495B2 JP55130603A JP13060380A JPH0231495B2 JP H0231495 B2 JPH0231495 B2 JP H0231495B2 JP 55130603 A JP55130603 A JP 55130603A JP 13060380 A JP13060380 A JP 13060380A JP H0231495 B2 JPH0231495 B2 JP H0231495B2
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- forming
- region
- base
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012212 insulator Substances 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 12
- 238000004070 electrodeposition Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13060380A JPS5756965A (en) | 1980-09-22 | 1980-09-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13060380A JPS5756965A (en) | 1980-09-22 | 1980-09-22 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5756965A JPS5756965A (en) | 1982-04-05 |
| JPH0231495B2 true JPH0231495B2 (US08177716-20120515-C00003.png) | 1990-07-13 |
Family
ID=15038155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13060380A Granted JPS5756965A (en) | 1980-09-22 | 1980-09-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5756965A (US08177716-20120515-C00003.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0310790U (US08177716-20120515-C00003.png) * | 1989-06-19 | 1991-01-31 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60108023U (ja) * | 1983-12-24 | 1985-07-23 | 株式会社アドバンテスト | 高精度電圧発生装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5010580A (US08177716-20120515-C00003.png) * | 1973-05-25 | 1975-02-03 | ||
| JPS5010974A (US08177716-20120515-C00003.png) * | 1973-05-25 | 1975-02-04 | ||
| JPS5167069A (en) * | 1974-12-07 | 1976-06-10 | Fujitsu Ltd | Handotaisochino seizohoho |
-
1980
- 1980-09-22 JP JP13060380A patent/JPS5756965A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5010580A (US08177716-20120515-C00003.png) * | 1973-05-25 | 1975-02-03 | ||
| JPS5010974A (US08177716-20120515-C00003.png) * | 1973-05-25 | 1975-02-04 | ||
| JPS5167069A (en) * | 1974-12-07 | 1976-06-10 | Fujitsu Ltd | Handotaisochino seizohoho |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0310790U (US08177716-20120515-C00003.png) * | 1989-06-19 | 1991-01-31 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5756965A (en) | 1982-04-05 |
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