JPH0230186B2 - - Google Patents

Info

Publication number
JPH0230186B2
JPH0230186B2 JP58157339A JP15733983A JPH0230186B2 JP H0230186 B2 JPH0230186 B2 JP H0230186B2 JP 58157339 A JP58157339 A JP 58157339A JP 15733983 A JP15733983 A JP 15733983A JP H0230186 B2 JPH0230186 B2 JP H0230186B2
Authority
JP
Japan
Prior art keywords
silicon
film
oxide film
insulating film
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58157339A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6049662A (ja
Inventor
Shuichi Ooya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP15733983A priority Critical patent/JPS6049662A/ja
Publication of JPS6049662A publication Critical patent/JPS6049662A/ja
Publication of JPH0230186B2 publication Critical patent/JPH0230186B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
JP15733983A 1983-08-29 1983-08-29 半導体装置の製造方法 Granted JPS6049662A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15733983A JPS6049662A (ja) 1983-08-29 1983-08-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15733983A JPS6049662A (ja) 1983-08-29 1983-08-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6049662A JPS6049662A (ja) 1985-03-18
JPH0230186B2 true JPH0230186B2 (enrdf_load_stackoverflow) 1990-07-04

Family

ID=15647523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15733983A Granted JPS6049662A (ja) 1983-08-29 1983-08-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6049662A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136274A (ja) * 1984-12-07 1986-06-24 Toshiba Corp 半導体装置
JP2723148B2 (ja) * 1986-09-05 1998-03-09 株式会社日立製作所 半導体装置の製造方法
JPH0216763A (ja) * 1988-07-05 1990-01-19 Toshiba Corp 半導体装置の製造方法
JPH03229455A (ja) * 1990-02-05 1991-10-11 Matsushita Electron Corp 容量素子の製造方法
JPH03276752A (ja) * 1990-03-27 1991-12-06 Matsushita Electron Corp 半導体容量装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918793B2 (ja) * 1975-06-14 1984-04-28 富士通株式会社 半導体不揮発性記憶装置
JPS59977B2 (ja) * 1976-02-05 1984-01-10 日本電気株式会社 絶縁ゲ−ト型集積回路

Also Published As

Publication number Publication date
JPS6049662A (ja) 1985-03-18

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