JPH0218950A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法Info
- Publication number
- JPH0218950A JPH0218950A JP16965488A JP16965488A JPH0218950A JP H0218950 A JPH0218950 A JP H0218950A JP 16965488 A JP16965488 A JP 16965488A JP 16965488 A JP16965488 A JP 16965488A JP H0218950 A JPH0218950 A JP H0218950A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- film
- interlayer insulating
- insulating film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000011229 interlayer Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims abstract description 26
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 29
- 229910052721 tungsten Inorganic materials 0.000 claims description 29
- 239000010937 tungsten Substances 0.000 claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 26
- 238000000059 patterning Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 239000005380 borophosphosilicate glass Substances 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 5
- -1 arsenic ions Chemical class 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16965488A JPH0218950A (ja) | 1988-07-07 | 1988-07-07 | 半導体装置及びその製造方法 |
| US07/376,655 US5110762A (en) | 1988-07-07 | 1989-07-07 | Manufacturing a wiring formed inside a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16965488A JPH0218950A (ja) | 1988-07-07 | 1988-07-07 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0218950A true JPH0218950A (ja) | 1990-01-23 |
| JPH0581181B2 JPH0581181B2 (enrdf_load_html_response) | 1993-11-11 |
Family
ID=15890472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16965488A Granted JPH0218950A (ja) | 1988-07-07 | 1988-07-07 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0218950A (enrdf_load_html_response) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0296331A (ja) * | 1988-09-30 | 1990-04-09 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
| DE4113741A1 (de) * | 1990-11-06 | 1992-05-07 | Mitsubishi Electric Corp | Halbleitereinrichtung und verfahren zu deren herstellung |
| JPH06224190A (ja) * | 1992-10-30 | 1994-08-12 | Hyundai Electron Ind Co Ltd | タングステンプラグの製造方法 |
| JPH09306993A (ja) * | 1996-05-16 | 1997-11-28 | Lg Semicon Co Ltd | 半導体装置の配線形成方法 |
-
1988
- 1988-07-07 JP JP16965488A patent/JPH0218950A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0296331A (ja) * | 1988-09-30 | 1990-04-09 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
| DE4113741A1 (de) * | 1990-11-06 | 1992-05-07 | Mitsubishi Electric Corp | Halbleitereinrichtung und verfahren zu deren herstellung |
| JPH06224190A (ja) * | 1992-10-30 | 1994-08-12 | Hyundai Electron Ind Co Ltd | タングステンプラグの製造方法 |
| JPH09306993A (ja) * | 1996-05-16 | 1997-11-28 | Lg Semicon Co Ltd | 半導体装置の配線形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0581181B2 (enrdf_load_html_response) | 1993-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4617193A (en) | Planar interconnect for integrated circuits | |
| US4630357A (en) | Method for forming improved contacts between interconnect layers of an integrated circuit | |
| US6090700A (en) | Metallization method for forming interconnects in an integrated circuit | |
| JPH02168624A (ja) | 半導体ウエーハ上の自己整合型共形メタライゼーション製造方法 | |
| JPH0360055A (ja) | 集積回路の製造方法 | |
| US5109267A (en) | Method for producing an integrated circuit structure with a dense multilayer metallization pattern | |
| JPH0418701B2 (enrdf_load_html_response) | ||
| JPH0218950A (ja) | 半導体装置及びその製造方法 | |
| US6376357B1 (en) | Method for manufacturing a semiconductor device with voids in the insulation film between wirings | |
| JP2573621B2 (ja) | 電気的相互接続部の製造方法 | |
| JPS61208241A (ja) | 半導体装置の製造方法 | |
| JPH0259618B2 (enrdf_load_html_response) | ||
| JPH01150338A (ja) | 配線形成方法 | |
| JPS59200439A (ja) | 半導体装置の製造方法 | |
| JP2855981B2 (ja) | 半導体装置の製造方法 | |
| JP2940986B2 (ja) | 半導体装置の製造方法 | |
| JPH04113655A (ja) | 半導体装置およびその製造方法 | |
| JPH05218209A (ja) | 半導体装置及びその製造方法 | |
| JP2790514B2 (ja) | 半導体装置の製造方法 | |
| JP2723560B2 (ja) | 半導体装置の製造方法 | |
| KR100249827B1 (ko) | 반도체 소자의 다층 금속 배선 제조방법 | |
| JP2738358B2 (ja) | 半導体装置の製造方法 | |
| KR0175518B1 (ko) | 반도체 소자에서의 금속배선의 구조 및 그 제조 방법 | |
| JPH0387030A (ja) | 多層配線法 | |
| CN115249644A (zh) | 半导体结构的形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |