JPH0218320B2 - - Google Patents
Info
- Publication number
- JPH0218320B2 JPH0218320B2 JP58202815A JP20281583A JPH0218320B2 JP H0218320 B2 JPH0218320 B2 JP H0218320B2 JP 58202815 A JP58202815 A JP 58202815A JP 20281583 A JP20281583 A JP 20281583A JP H0218320 B2 JPH0218320 B2 JP H0218320B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- bpb
- substrate
- producing
- bapb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 14
- 229910016063 BaPb Inorganic materials 0.000 claims description 6
- 239000002887 superconductor Substances 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910010252 TiO3 Inorganic materials 0.000 claims description 4
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 229910002367 SrTiO Inorganic materials 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- -1 KTaO3 Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58202815A JPS6096599A (ja) | 1983-10-31 | 1983-10-31 | 酸化物超伝導体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58202815A JPS6096599A (ja) | 1983-10-31 | 1983-10-31 | 酸化物超伝導体薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6096599A JPS6096599A (ja) | 1985-05-30 |
| JPH0218320B2 true JPH0218320B2 (ko) | 1990-04-25 |
Family
ID=16463654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58202815A Granted JPS6096599A (ja) | 1983-10-31 | 1983-10-31 | 酸化物超伝導体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6096599A (ko) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0277885B1 (en) * | 1987-02-05 | 1993-12-22 | Sumitomo Electric Industries Limited | Process for preparing a superconducting thin film |
| EP0284489B2 (en) * | 1987-03-14 | 2002-04-10 | Sumitomo Electric Industries Limited | Process for depositing a superconducting thin film |
| JPH0724338B2 (ja) * | 1987-03-18 | 1995-03-15 | 株式会社日立製作所 | 電子装置 |
| JP2644223B2 (ja) * | 1987-03-24 | 1997-08-25 | 古河電気工業株式会社 | 超電導線の製造方法 |
| JPS6487763A (en) * | 1987-05-26 | 1989-03-31 | Sumitomo Electric Industries | Superconducting material |
| JPS6460925A (en) * | 1987-08-31 | 1989-03-08 | Semiconductor Energy Lab | Fabricating method for superconductive material |
| JP2757257B2 (ja) * | 1988-05-16 | 1998-05-25 | 日本電信電話株式会社 | 酸化物超伝導薄膜の形成方法 |
| DE3851701T2 (de) * | 1988-06-03 | 1995-03-30 | Ibm | Verfahren zur Herstellung künstlicher Hochtemperatur-Supraleiter mit mehrschichtiger Struktur. |
| JPH02258700A (ja) * | 1989-03-30 | 1990-10-19 | Res Inst For Prod Dev | 強誘電体薄膜及びその製造法 |
| US5358927A (en) * | 1990-05-31 | 1994-10-25 | Bell Communications Research, Inc. | Growth of a,b-axis oriented pervoskite thin films |
-
1983
- 1983-10-31 JP JP58202815A patent/JPS6096599A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6096599A (ja) | 1985-05-30 |
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