JPH053439B2 - - Google Patents
Info
- Publication number
- JPH053439B2 JPH053439B2 JP61199244A JP19924486A JPH053439B2 JP H053439 B2 JPH053439 B2 JP H053439B2 JP 61199244 A JP61199244 A JP 61199244A JP 19924486 A JP19924486 A JP 19924486A JP H053439 B2 JPH053439 B2 JP H053439B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- dielectric
- epitaxial film
- mgal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 16
- 229910020068 MgAl Inorganic materials 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910002367 SrTiO Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Insulating Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61199244A JPS6355198A (ja) | 1986-08-25 | 1986-08-25 | 誘電体薄膜デバイス用基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61199244A JPS6355198A (ja) | 1986-08-25 | 1986-08-25 | 誘電体薄膜デバイス用基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6355198A JPS6355198A (ja) | 1988-03-09 |
| JPH053439B2 true JPH053439B2 (ko) | 1993-01-14 |
Family
ID=16404564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61199244A Granted JPS6355198A (ja) | 1986-08-25 | 1986-08-25 | 誘電体薄膜デバイス用基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6355198A (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2712780B2 (ja) * | 1990-07-19 | 1998-02-16 | 松下電器産業株式会社 | 高周波加熱装置 |
| JPH06196648A (ja) * | 1992-12-25 | 1994-07-15 | Fuji Xerox Co Ltd | 配向性強誘電体薄膜素子 |
| JP2004158717A (ja) * | 2002-11-07 | 2004-06-03 | Fujitsu Ltd | 薄膜積層体、その薄膜積層体を用いた電子装置及びアクチュエータ、並びにアクチュエータの製造方法 |
| EP1589370A4 (en) * | 2003-01-27 | 2006-08-09 | Fujitsu Ltd | OPTICAL DEFLECTION DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| JP2008252071A (ja) * | 2007-03-06 | 2008-10-16 | Fujifilm Corp | 圧電素子とその製造方法、及び液体吐出装置 |
-
1986
- 1986-08-25 JP JP61199244A patent/JPS6355198A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6355198A (ja) | 1988-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |