JPH0217934B2 - - Google Patents

Info

Publication number
JPH0217934B2
JPH0217934B2 JP59221504A JP22150484A JPH0217934B2 JP H0217934 B2 JPH0217934 B2 JP H0217934B2 JP 59221504 A JP59221504 A JP 59221504A JP 22150484 A JP22150484 A JP 22150484A JP H0217934 B2 JPH0217934 B2 JP H0217934B2
Authority
JP
Japan
Prior art keywords
layer
gallium arsenide
arsenide layer
recess
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59221504A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6199380A (ja
Inventor
Masahisa Suzuki
Kazukyo Tsunenobu
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59221504A priority Critical patent/JPS6199380A/ja
Publication of JPS6199380A publication Critical patent/JPS6199380A/ja
Publication of JPH0217934B2 publication Critical patent/JPH0217934B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59221504A 1984-10-22 1984-10-22 半導体装置およびその製造方法 Granted JPS6199380A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59221504A JPS6199380A (ja) 1984-10-22 1984-10-22 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59221504A JPS6199380A (ja) 1984-10-22 1984-10-22 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6199380A JPS6199380A (ja) 1986-05-17
JPH0217934B2 true JPH0217934B2 (enrdf_load_stackoverflow) 1990-04-24

Family

ID=16767744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59221504A Granted JPS6199380A (ja) 1984-10-22 1984-10-22 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6199380A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3535002A1 (de) * 1985-10-01 1987-04-02 Telefunken Electronic Gmbh Sperrschicht-feldeffekttransistor
US5181087A (en) * 1986-02-28 1993-01-19 Hitachi, Ltd. Semiconductor device and method of producing the same
JP2612836B2 (ja) * 1987-09-23 1997-05-21 シーメンス、アクチエンゲゼルシヤフト 自己整合ゲートを備えるｍｅｓｆｅｔの製造方法
CA1301955C (en) * 1988-09-30 1992-05-26 Masanori Nishiguchi Semiconductor device mesfet with upper and lower layers
JP3027236B2 (ja) * 1991-07-25 2000-03-27 沖電気工業株式会社 半導体素子およびその製造方法
JPH06260507A (ja) * 1993-03-05 1994-09-16 Mitsubishi Electric Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS6199380A (ja) 1986-05-17

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