JPH0214791B2 - - Google Patents

Info

Publication number
JPH0214791B2
JPH0214791B2 JP54172014A JP17201479A JPH0214791B2 JP H0214791 B2 JPH0214791 B2 JP H0214791B2 JP 54172014 A JP54172014 A JP 54172014A JP 17201479 A JP17201479 A JP 17201479A JP H0214791 B2 JPH0214791 B2 JP H0214791B2
Authority
JP
Japan
Prior art keywords
film
molybdenum
polycrystalline silicon
silicide
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54172014A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5694671A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17201479A priority Critical patent/JPS5694671A/ja
Publication of JPS5694671A publication Critical patent/JPS5694671A/ja
Publication of JPH0214791B2 publication Critical patent/JPH0214791B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP17201479A 1979-12-27 1979-12-27 Manufacture of mis field-effect semiconductor device Granted JPS5694671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17201479A JPS5694671A (en) 1979-12-27 1979-12-27 Manufacture of mis field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17201479A JPS5694671A (en) 1979-12-27 1979-12-27 Manufacture of mis field-effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5694671A JPS5694671A (en) 1981-07-31
JPH0214791B2 true JPH0214791B2 (enrdf_load_stackoverflow) 1990-04-10

Family

ID=15933921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17201479A Granted JPS5694671A (en) 1979-12-27 1979-12-27 Manufacture of mis field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5694671A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8303179A (nl) * 1983-09-15 1985-04-01 Philips Nv Halfgeleiderinrichting.
JPH084078B2 (ja) * 1985-05-27 1996-01-17 富士通株式会社 半導体装置の製造方法
JP2660056B2 (ja) * 1989-09-12 1997-10-08 三菱電機株式会社 相補型ｍｏｓ半導体装置
TW232751B (en) 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114671A (en) * 1977-03-17 1978-10-06 Toshiba Corp Manufacture for semiconductor device

Also Published As

Publication number Publication date
JPS5694671A (en) 1981-07-31

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