JPH0212015B2 - - Google Patents

Info

Publication number
JPH0212015B2
JPH0212015B2 JP56036986A JP3698681A JPH0212015B2 JP H0212015 B2 JPH0212015 B2 JP H0212015B2 JP 56036986 A JP56036986 A JP 56036986A JP 3698681 A JP3698681 A JP 3698681A JP H0212015 B2 JPH0212015 B2 JP H0212015B2
Authority
JP
Japan
Prior art keywords
metal layer
metal
annealing
gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56036986A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57152168A (en
Inventor
Keiichi Oohata
Tsutomu Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56036986A priority Critical patent/JPS57152168A/ja
Publication of JPS57152168A publication Critical patent/JPS57152168A/ja
Publication of JPH0212015B2 publication Critical patent/JPH0212015B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56036986A 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor Granted JPS57152168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56036986A JPS57152168A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56036986A JPS57152168A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS57152168A JPS57152168A (en) 1982-09-20
JPH0212015B2 true JPH0212015B2 (enrdf_load_stackoverflow) 1990-03-16

Family

ID=12485066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56036986A Granted JPS57152168A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS57152168A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081872A (ja) * 1983-10-11 1985-05-09 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS60115268A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置の製造方法
JPS6143481A (ja) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd シヨツトキゲ−ト電界効果トランジスタの製造方法
JPH0812868B2 (ja) * 1984-08-27 1996-02-07 沖電気工業株式会社 化合物半導体素子の製造方法
JP2702338B2 (ja) * 1991-10-14 1998-01-21 三菱電機株式会社 半導体装置、及びその製造方法

Also Published As

Publication number Publication date
JPS57152168A (en) 1982-09-20

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