JPS57152168A - Manufacture of schottky barrier gate field effect transistor - Google Patents

Manufacture of schottky barrier gate field effect transistor

Info

Publication number
JPS57152168A
JPS57152168A JP56036986A JP3698681A JPS57152168A JP S57152168 A JPS57152168 A JP S57152168A JP 56036986 A JP56036986 A JP 56036986A JP 3698681 A JP3698681 A JP 3698681A JP S57152168 A JPS57152168 A JP S57152168A
Authority
JP
Japan
Prior art keywords
film
source
alloys
metal
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56036986A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0212015B2 (enrdf_load_stackoverflow
Inventor
Keiichi Ohata
Tsutomu Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56036986A priority Critical patent/JPS57152168A/ja
Publication of JPS57152168A publication Critical patent/JPS57152168A/ja
Publication of JPH0212015B2 publication Critical patent/JPH0212015B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56036986A 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor Granted JPS57152168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56036986A JPS57152168A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56036986A JPS57152168A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS57152168A true JPS57152168A (en) 1982-09-20
JPH0212015B2 JPH0212015B2 (enrdf_load_stackoverflow) 1990-03-16

Family

ID=12485066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56036986A Granted JPS57152168A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS57152168A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081872A (ja) * 1983-10-11 1985-05-09 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS60115268A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置の製造方法
JPS6143481A (ja) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd シヨツトキゲ−ト電界効果トランジスタの製造方法
JPS6155966A (ja) * 1984-08-27 1986-03-20 Oki Electric Ind Co Ltd 化合物半導体素子の製造方法
FR2682534A1 (fr) * 1991-10-14 1993-04-16 Mitsubishi Electric Corp Dispositif a semiconducteurs comportant un empilement de sections d'electrode de grille, et procede de fabrication de ce dispositif.

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081872A (ja) * 1983-10-11 1985-05-09 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS60115268A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置の製造方法
JPS6143481A (ja) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd シヨツトキゲ−ト電界効果トランジスタの製造方法
JPS6155966A (ja) * 1984-08-27 1986-03-20 Oki Electric Ind Co Ltd 化合物半導体素子の製造方法
FR2682534A1 (fr) * 1991-10-14 1993-04-16 Mitsubishi Electric Corp Dispositif a semiconducteurs comportant un empilement de sections d'electrode de grille, et procede de fabrication de ce dispositif.
US5384479A (en) * 1991-10-14 1995-01-24 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with T-shaped gate electrode
US5462884A (en) * 1991-10-14 1995-10-31 Mitsubishi Denki Kabushiki Kaisha Method of making field effect transistor with T-shaped gate electrode

Also Published As

Publication number Publication date
JPH0212015B2 (enrdf_load_stackoverflow) 1990-03-16

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