JPH0210575B2 - - Google Patents
Info
- Publication number
- JPH0210575B2 JPH0210575B2 JP55063573A JP6357380A JPH0210575B2 JP H0210575 B2 JPH0210575 B2 JP H0210575B2 JP 55063573 A JP55063573 A JP 55063573A JP 6357380 A JP6357380 A JP 6357380A JP H0210575 B2 JPH0210575 B2 JP H0210575B2
- Authority
- JP
- Japan
- Prior art keywords
- groove
- film
- trench
- phosphosilicate glass
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 239000005360 phosphosilicate glass Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 241000293849 Cordylanthus Species 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6357380A JPS56160050A (en) | 1980-05-14 | 1980-05-14 | Semiconductor device and manufacture thereof |
DE8181302078T DE3174383D1 (en) | 1980-05-14 | 1981-05-11 | Method of manufacturing a semiconductor device comprising an isolation structure |
IE1040/81A IE51992B1 (en) | 1980-05-14 | 1981-05-11 | Method for manufacturing a semiconductor device |
EP81302078A EP0041776B2 (en) | 1980-05-14 | 1981-05-11 | Method of manufacturing a semiconductor device comprising an isolation structure |
US06/263,280 US4404735A (en) | 1980-05-14 | 1981-05-13 | Method for manufacturing a field isolation structure for a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6357380A JPS56160050A (en) | 1980-05-14 | 1980-05-14 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56160050A JPS56160050A (en) | 1981-12-09 |
JPH0210575B2 true JPH0210575B2 (US08088816-20120103-C00036.png) | 1990-03-08 |
Family
ID=13233122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6357380A Granted JPS56160050A (en) | 1980-05-14 | 1980-05-14 | Semiconductor device and manufacture thereof |
Country Status (5)
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4544576A (en) * | 1981-07-27 | 1985-10-01 | International Business Machines Corporation | Deep dielectric isolation by fused glass |
US4492717A (en) * | 1981-07-27 | 1985-01-08 | International Business Machines Corporation | Method for forming a planarized integrated circuit |
US4506435A (en) * | 1981-07-27 | 1985-03-26 | International Business Machines Corporation | Method for forming recessed isolated regions |
EP0073025B1 (en) * | 1981-08-21 | 1989-08-09 | Kabushiki Kaisha Toshiba | Method of manufacturing dielectric isolation regions for a semiconductor device |
FR2513016A1 (fr) * | 1981-09-14 | 1983-03-18 | Radiotechnique Compelec | Transistor v mos haute tension, et son procede de fabrication |
JPS58115832A (ja) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS58210634A (ja) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | 半導体装置の製造方法 |
JPS59106133A (ja) * | 1982-12-09 | 1984-06-19 | Nec Corp | 集積回路装置 |
JPS59119848A (ja) * | 1982-12-27 | 1984-07-11 | Fujitsu Ltd | 半導体装置の製造方法 |
US4494303A (en) * | 1983-03-31 | 1985-01-22 | At&T Bell Laboratories | Method of making dielectrically isolated silicon devices |
JPS6042855A (ja) * | 1983-08-19 | 1985-03-07 | Hitachi Ltd | 半導体装置 |
JPH073858B2 (ja) * | 1984-04-11 | 1995-01-18 | 株式会社日立製作所 | 半導体装置の製造方法 |
JPS618945A (ja) * | 1984-06-25 | 1986-01-16 | Nec Corp | 半導体集積回路装置 |
US4574469A (en) * | 1984-09-14 | 1986-03-11 | Motorola, Inc. | Process for self-aligned buried layer, channel-stop, and isolation |
US4583282A (en) * | 1984-09-14 | 1986-04-22 | Motorola, Inc. | Process for self-aligned buried layer, field guard, and isolation |
US4656497A (en) * | 1984-11-01 | 1987-04-07 | Ncr Corporation | Trench isolation structures |
US4571819A (en) * | 1984-11-01 | 1986-02-25 | Ncr Corporation | Method for forming trench isolation structures |
US4665010A (en) * | 1985-04-29 | 1987-05-12 | International Business Machines Corporation | Method of fabricating photopolymer isolation trenches in the surface of a semiconductor wafer |
US4681795A (en) * | 1985-06-24 | 1987-07-21 | The United States Of America As Represented By The Department Of Energy | Planarization of metal films for multilevel interconnects |
US4665007A (en) * | 1985-08-19 | 1987-05-12 | International Business Machines Corporation | Planarization process for organic filling of deep trenches |
JP2584754B2 (ja) * | 1986-12-01 | 1997-02-26 | キヤノン株式会社 | 通信装置 |
JPH0834242B2 (ja) * | 1988-12-08 | 1996-03-29 | 日本電気株式会社 | 半導体装置およびその製造方法 |
DE69125886T2 (de) * | 1990-05-29 | 1997-11-20 | Semiconductor Energy Lab | Dünnfilmtransistoren |
JPH05129296A (ja) * | 1991-11-05 | 1993-05-25 | Fujitsu Ltd | 導電膜の平坦化方法 |
US5646450A (en) * | 1994-06-01 | 1997-07-08 | Raytheon Company | Semiconductor structures and method of manufacturing |
US5773309A (en) * | 1994-10-14 | 1998-06-30 | The Regents Of The University Of California | Method for producing silicon thin-film transistors with enhanced forward current drive |
JP3180599B2 (ja) * | 1995-01-24 | 2001-06-25 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6114741A (en) * | 1996-12-13 | 2000-09-05 | Texas Instruments Incorporated | Trench isolation of a CMOS structure |
TW347576B (en) * | 1996-12-18 | 1998-12-11 | Siemens Ag | Method to produce an integrated circuit arrangement |
US6535535B1 (en) * | 1999-02-12 | 2003-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and semiconductor device |
US7374974B1 (en) * | 2001-03-22 | 2008-05-20 | T-Ram Semiconductor, Inc. | Thyristor-based device with trench dielectric material |
JP3559971B2 (ja) * | 2001-12-11 | 2004-09-02 | 日産自動車株式会社 | 炭化珪素半導体装置およびその製造方法 |
US7615393B1 (en) | 2008-10-29 | 2009-11-10 | Innovalight, Inc. | Methods of forming multi-doped junctions on a substrate |
WO2013135749A1 (en) * | 2012-03-14 | 2013-09-19 | Imec | Method for fabricating photovoltaic cells with plated contacts |
JP2014130922A (ja) * | 2012-12-28 | 2014-07-10 | Toshiba Corp | 半導体装置及びその製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50118672A (US08088816-20120103-C00036.png) * | 1974-03-01 | 1975-09-17 | ||
JPS51146192A (en) * | 1975-06-11 | 1976-12-15 | Fujitsu Ltd | Diode device fabrication method |
JPS5255877A (en) * | 1975-11-01 | 1977-05-07 | Fujitsu Ltd | Semiconductor device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1461943A (en) * | 1973-02-21 | 1977-01-19 | Raytheon Co | Semi-conductor devices |
US3998673A (en) * | 1974-08-16 | 1976-12-21 | Pel Chow | Method for forming electrically-isolated regions in integrated circuits utilizing selective epitaxial growth |
JPS5422168A (en) * | 1977-07-20 | 1979-02-19 | Toshiba Corp | Glass coating method for semiconductor element |
JPS54147789A (en) * | 1978-05-11 | 1979-11-19 | Matsushita Electric Ind Co Ltd | Semiconductor divice and its manufacture |
GB2023926B (en) * | 1978-06-22 | 1983-03-16 | Western Electric Co | Conductors for semiconductor devices |
JPS5534442A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semiconductor device |
JPS5572052A (en) * | 1978-11-27 | 1980-05-30 | Fujitsu Ltd | Preparation of semiconductor device |
US4269636A (en) * | 1978-12-29 | 1981-05-26 | Harris Corporation | Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking |
CA1174285A (en) * | 1980-04-28 | 1984-09-11 | Michelangelo Delfino | Laser induced flow of integrated circuit structure materials |
US4284659A (en) * | 1980-05-12 | 1981-08-18 | Bell Telephone Laboratories | Insulation layer reflow |
-
1980
- 1980-05-14 JP JP6357380A patent/JPS56160050A/ja active Granted
-
1981
- 1981-05-11 IE IE1040/81A patent/IE51992B1/en not_active IP Right Cessation
- 1981-05-11 EP EP81302078A patent/EP0041776B2/en not_active Expired - Lifetime
- 1981-05-11 DE DE8181302078T patent/DE3174383D1/de not_active Expired
- 1981-05-13 US US06/263,280 patent/US4404735A/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50118672A (US08088816-20120103-C00036.png) * | 1974-03-01 | 1975-09-17 | ||
JPS51146192A (en) * | 1975-06-11 | 1976-12-15 | Fujitsu Ltd | Diode device fabrication method |
JPS5255877A (en) * | 1975-11-01 | 1977-05-07 | Fujitsu Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
EP0041776B2 (en) | 1990-03-14 |
EP0041776A3 (en) | 1983-12-21 |
IE51992B1 (en) | 1987-05-13 |
DE3174383D1 (en) | 1986-05-22 |
US4404735A (en) | 1983-09-20 |
EP0041776B1 (en) | 1986-04-16 |
IE811040L (en) | 1981-11-14 |
JPS56160050A (en) | 1981-12-09 |
EP0041776A2 (en) | 1981-12-16 |