JPS5422168A - Glass coating method for semiconductor element - Google Patents

Glass coating method for semiconductor element

Info

Publication number
JPS5422168A
JPS5422168A JP8612077A JP8612077A JPS5422168A JP S5422168 A JPS5422168 A JP S5422168A JP 8612077 A JP8612077 A JP 8612077A JP 8612077 A JP8612077 A JP 8612077A JP S5422168 A JPS5422168 A JP S5422168A
Authority
JP
Japan
Prior art keywords
semiconductor element
coating method
glass coating
glass powder
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8612077A
Other languages
Japanese (ja)
Other versions
JPS5436457B2 (en
Inventor
Masaru Shinpo
Mikiko Negishi
Katsujiro Tanzawa
Masafumi Miyagawa
Tsuneo Atsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8612077A priority Critical patent/JPS5422168A/en
Publication of JPS5422168A publication Critical patent/JPS5422168A/en
Publication of JPS5436457B2 publication Critical patent/JPS5436457B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To form a dense glass layer by keeping the necessary measurement in an easy way through sticking the glass powder onto the prescribed surface by using the glass powder dispersion solution containing the Y and Mg compounds to the electrophoresis deposition.
COPYRIGHT: (C)1979,JPO&Japio
JP8612077A 1977-07-20 1977-07-20 Glass coating method for semiconductor element Granted JPS5422168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8612077A JPS5422168A (en) 1977-07-20 1977-07-20 Glass coating method for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8612077A JPS5422168A (en) 1977-07-20 1977-07-20 Glass coating method for semiconductor element

Publications (2)

Publication Number Publication Date
JPS5422168A true JPS5422168A (en) 1979-02-19
JPS5436457B2 JPS5436457B2 (en) 1979-11-09

Family

ID=13877829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8612077A Granted JPS5422168A (en) 1977-07-20 1977-07-20 Glass coating method for semiconductor element

Country Status (1)

Country Link
JP (1) JPS5422168A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143832A (en) * 1981-02-27 1982-09-06 Matsushita Electronics Corp Manufacture of semiconductor device
US4404735A (en) * 1980-05-14 1983-09-20 Fujitsu Limited Method for manufacturing a field isolation structure for a semiconductor device
JP2005034731A (en) * 2003-07-14 2005-02-10 Seiko Epson Corp Ferroelectric substance membrane, its production method and ferroelectric substance memory
JP2016146495A (en) * 2010-03-18 2016-08-12 株式会社リコー Coating liquid for forming insulator film, insulator film, manufacturing method for insulator film, and manufacturing method for semiconductor device
US10020374B2 (en) 2009-12-25 2018-07-10 Ricoh Company, Ltd. Field-effect transistor, semiconductor memory display element, image display device, and system

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404735A (en) * 1980-05-14 1983-09-20 Fujitsu Limited Method for manufacturing a field isolation structure for a semiconductor device
JPS57143832A (en) * 1981-02-27 1982-09-06 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6322457B2 (en) * 1981-02-27 1988-05-12 Matsushita Electronics Corp
JP2005034731A (en) * 2003-07-14 2005-02-10 Seiko Epson Corp Ferroelectric substance membrane, its production method and ferroelectric substance memory
US10020374B2 (en) 2009-12-25 2018-07-10 Ricoh Company, Ltd. Field-effect transistor, semiconductor memory display element, image display device, and system
US11271085B2 (en) 2009-12-25 2022-03-08 Ricoh Company, Ltd. Field-effect transistor having amorphous composite metal oxide insulation film, semiconductor memory, display element, image display device, and system
JP2016146495A (en) * 2010-03-18 2016-08-12 株式会社リコー Coating liquid for forming insulator film, insulator film, manufacturing method for insulator film, and manufacturing method for semiconductor device

Also Published As

Publication number Publication date
JPS5436457B2 (en) 1979-11-09

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