JPS5255877A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5255877A JPS5255877A JP13161075A JP13161075A JPS5255877A JP S5255877 A JPS5255877 A JP S5255877A JP 13161075 A JP13161075 A JP 13161075A JP 13161075 A JP13161075 A JP 13161075A JP S5255877 A JPS5255877 A JP S5255877A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- hamper
- fabricated
- integration
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
- Weting (AREA)
Abstract
PURPOSE: To obtain an IC of higher scale of integration by forming isolations which are easy to fabricated and do not hamper wiring.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13161075A JPS5255877A (en) | 1975-11-01 | 1975-11-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13161075A JPS5255877A (en) | 1975-11-01 | 1975-11-01 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5255877A true JPS5255877A (en) | 1977-05-07 |
Family
ID=15062075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13161075A Pending JPS5255877A (en) | 1975-11-01 | 1975-11-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5255877A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5432277A (en) * | 1977-08-15 | 1979-03-09 | Ibm | Method of forming silicon area isolated from dielectric |
| JPS56160050A (en) * | 1980-05-14 | 1981-12-09 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS5818938A (en) * | 1981-07-27 | 1983-02-03 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | Integrated circuit structure |
| JPS58138047A (en) * | 1982-02-10 | 1983-08-16 | Nec Corp | Manufacture of semiconductor device |
| JPS58138049A (en) * | 1982-02-12 | 1983-08-16 | Mitsubishi Electric Corp | Manufacture of semiconductor ic |
| JPS58155738A (en) * | 1982-03-11 | 1983-09-16 | Mitsubishi Electric Corp | Semiconductor integrated circuit and manufacture thereof |
| JPS59161836A (en) * | 1983-03-04 | 1984-09-12 | Sanyo Electric Co Ltd | Semiconductor device |
| US5049521A (en) * | 1989-11-30 | 1991-09-17 | Silicon General, Inc. | Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942276A (en) * | 1972-05-17 | 1974-04-20 | ||
| JPS4979792A (en) * | 1972-12-08 | 1974-08-01 | ||
| JPS508316A (en) * | 1973-05-25 | 1975-01-28 |
-
1975
- 1975-11-01 JP JP13161075A patent/JPS5255877A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942276A (en) * | 1972-05-17 | 1974-04-20 | ||
| JPS4979792A (en) * | 1972-12-08 | 1974-08-01 | ||
| JPS508316A (en) * | 1973-05-25 | 1975-01-28 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5432277A (en) * | 1977-08-15 | 1979-03-09 | Ibm | Method of forming silicon area isolated from dielectric |
| JPS6220696B2 (en) * | 1977-08-15 | 1987-05-08 | Intaanashonaru Bijinesu Mashiinzu Corp | |
| JPS56160050A (en) * | 1980-05-14 | 1981-12-09 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPH0210575B2 (en) * | 1980-05-14 | 1990-03-08 | Fujitsu Ltd | |
| JPS5818938A (en) * | 1981-07-27 | 1983-02-03 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | Integrated circuit structure |
| JPH0429228B2 (en) * | 1981-07-27 | 1992-05-18 | ||
| JPS58138047A (en) * | 1982-02-10 | 1983-08-16 | Nec Corp | Manufacture of semiconductor device |
| JPS58138049A (en) * | 1982-02-12 | 1983-08-16 | Mitsubishi Electric Corp | Manufacture of semiconductor ic |
| JPS58155738A (en) * | 1982-03-11 | 1983-09-16 | Mitsubishi Electric Corp | Semiconductor integrated circuit and manufacture thereof |
| JPS59161836A (en) * | 1983-03-04 | 1984-09-12 | Sanyo Electric Co Ltd | Semiconductor device |
| US5049521A (en) * | 1989-11-30 | 1991-09-17 | Silicon General, Inc. | Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate |
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