JPH0139222B2 - - Google Patents
Info
- Publication number
- JPH0139222B2 JPH0139222B2 JP56134196A JP13419681A JPH0139222B2 JP H0139222 B2 JPH0139222 B2 JP H0139222B2 JP 56134196 A JP56134196 A JP 56134196A JP 13419681 A JP13419681 A JP 13419681A JP H0139222 B2 JPH0139222 B2 JP H0139222B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- titanium
- metal
- electrode
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010936 titanium Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 150000003609 titanium compounds Chemical class 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910011214 Ti—Mo Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13419681A JPS5835919A (ja) | 1981-08-28 | 1981-08-28 | 金属半導体接合電極の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13419681A JPS5835919A (ja) | 1981-08-28 | 1981-08-28 | 金属半導体接合電極の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5835919A JPS5835919A (ja) | 1983-03-02 |
| JPH0139222B2 true JPH0139222B2 (fr) | 1989-08-18 |
Family
ID=15122672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13419681A Granted JPS5835919A (ja) | 1981-08-28 | 1981-08-28 | 金属半導体接合電極の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5835919A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH061774B2 (ja) * | 1985-03-29 | 1994-01-05 | 株式会社東芝 | 半導体装置 |
| US5278099A (en) * | 1985-05-13 | 1994-01-11 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device having wiring electrodes |
| JPH0732146B2 (ja) * | 1988-01-05 | 1995-04-10 | 日本電気株式会社 | 化合物半導体装置の電極形成方法 |
| US4935805A (en) * | 1988-05-16 | 1990-06-19 | Eaton Corporation | T-type undercut electrical contact on a semiconductor substrate |
| US4923827A (en) * | 1988-05-16 | 1990-05-08 | Eaton Corporation | T-type undercut electrical contact process on a semiconductor substrate |
| US5036023A (en) * | 1989-08-16 | 1991-07-30 | At&T Bell Laboratories | Rapid thermal processing method of making a semiconductor device |
| JPH0463480A (ja) * | 1990-07-02 | 1992-02-28 | Sharp Corp | ３―ｖ族化合物半導体装置 |
| US6204560B1 (en) * | 1998-04-20 | 2001-03-20 | Uniphase Laser Enterprise Ag | Titanium nitride diffusion barrier for use in non-silicon technologies and method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120132A (en) * | 1979-11-30 | 1980-09-16 | Sumitomo Electric Ind Ltd | Manufacture of semiconductor element |
-
1981
- 1981-08-28 JP JP13419681A patent/JPS5835919A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120132A (en) * | 1979-11-30 | 1980-09-16 | Sumitomo Electric Ind Ltd | Manufacture of semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5835919A (ja) | 1983-03-02 |
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