JPH0123938B2 - - Google Patents

Info

Publication number
JPH0123938B2
JPH0123938B2 JP55024831A JP2483180A JPH0123938B2 JP H0123938 B2 JPH0123938 B2 JP H0123938B2 JP 55024831 A JP55024831 A JP 55024831A JP 2483180 A JP2483180 A JP 2483180A JP H0123938 B2 JPH0123938 B2 JP H0123938B2
Authority
JP
Japan
Prior art keywords
etching
silicon
oxide film
silicon substrate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55024831A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56122129A (en
Inventor
Yukinori Kuroki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2483180A priority Critical patent/JPS56122129A/ja
Publication of JPS56122129A publication Critical patent/JPS56122129A/ja
Publication of JPH0123938B2 publication Critical patent/JPH0123938B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2483180A 1980-02-28 1980-02-28 Manufacture of semiconductor device Granted JPS56122129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2483180A JPS56122129A (en) 1980-02-28 1980-02-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2483180A JPS56122129A (en) 1980-02-28 1980-02-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56122129A JPS56122129A (en) 1981-09-25
JPH0123938B2 true JPH0123938B2 (enExample) 1989-05-09

Family

ID=12149135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2483180A Granted JPS56122129A (en) 1980-02-28 1980-02-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56122129A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114235A (en) * 1981-01-08 1982-07-16 Toshiba Corp Cleaning of semiconductor substrate
JPS5893235A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体装置の製造方法
US4418094A (en) * 1982-03-02 1983-11-29 Texas Instruments Incorporated Vertical-etch direct moat isolation process
JPH0722148B2 (ja) * 1983-03-07 1995-03-08 株式会社日立製作所 異方性エツチング制御方法
JPS6098626A (ja) * 1983-11-02 1985-06-01 Oki Electric Ind Co Ltd 半導体層の表面処理方法
JPS6197824A (ja) * 1984-10-18 1986-05-16 Sanyo Electric Co Ltd 半導体装置のコンタクトホ−ル形成方法
JPH0646630B2 (ja) * 1985-06-07 1994-06-15 株式会社日立製作所 プラズマ処理方法
EP0424299A3 (en) * 1989-10-20 1991-08-28 International Business Machines Corporation Selective silicon nitride plasma etching
JP2580373B2 (ja) * 1990-08-10 1997-02-12 大日本スクリーン製造株式会社 基板の表面処理方法
JP2573108B2 (ja) * 1991-06-14 1997-01-22 株式会社 半導体エネルギー研究所 プラズマ処理方法
JP3019002B2 (ja) * 1996-09-20 2000-03-13 日本電気株式会社 ドライエッチング装置及びドライエッチング方法
US6551924B1 (en) * 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
JP7390134B2 (ja) * 2019-08-28 2023-12-01 東京エレクトロン株式会社 エッチング処理方法およびエッチング処理装置
JP7349861B2 (ja) * 2019-09-24 2023-09-25 東京エレクトロン株式会社 エッチング方法、ダメージ層の除去方法、および記憶媒体

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839377B2 (ja) * 1978-03-20 1983-08-30 日本電信電話株式会社 シリコンウエ−ハの処理方法

Also Published As

Publication number Publication date
JPS56122129A (en) 1981-09-25

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