JPS56122129A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56122129A
JPS56122129A JP2483180A JP2483180A JPS56122129A JP S56122129 A JPS56122129 A JP S56122129A JP 2483180 A JP2483180 A JP 2483180A JP 2483180 A JP2483180 A JP 2483180A JP S56122129 A JPS56122129 A JP S56122129A
Authority
JP
Japan
Prior art keywords
substrate
gas
etching
dry etching
chloride gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2483180A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0123938B2 (enExample
Inventor
Yukinori Kuroki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2483180A priority Critical patent/JPS56122129A/ja
Publication of JPS56122129A publication Critical patent/JPS56122129A/ja
Publication of JPH0123938B2 publication Critical patent/JPH0123938B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2483180A 1980-02-28 1980-02-28 Manufacture of semiconductor device Granted JPS56122129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2483180A JPS56122129A (en) 1980-02-28 1980-02-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2483180A JPS56122129A (en) 1980-02-28 1980-02-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56122129A true JPS56122129A (en) 1981-09-25
JPH0123938B2 JPH0123938B2 (enExample) 1989-05-09

Family

ID=12149135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2483180A Granted JPS56122129A (en) 1980-02-28 1980-02-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56122129A (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114235A (en) * 1981-01-08 1982-07-16 Toshiba Corp Cleaning of semiconductor substrate
JPS5893235A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体装置の製造方法
JPS58161327A (ja) * 1982-03-02 1983-09-24 テキサス・インスツルメンツ・インコ−ポレイテツド 異方性エツチ工程による直接モ−ト絶縁を行う集積回路装置製造方法
JPS59161823A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 異方性エツチング制御方法
JPS6098626A (ja) * 1983-11-02 1985-06-01 Oki Electric Ind Co Ltd 半導体層の表面処理方法
JPS6197824A (ja) * 1984-10-18 1986-05-16 Sanyo Electric Co Ltd 半導体装置のコンタクトホ−ル形成方法
JPS61281531A (ja) * 1985-06-07 1986-12-11 Hitachi Ltd プラズマ処理方法
JPH03145725A (ja) * 1989-10-20 1991-06-20 Internatl Business Mach Corp <Ibm> エツチング方法
JPH0494534A (ja) * 1990-08-10 1992-03-26 Dainippon Screen Mfg Co Ltd 基板の表面処理方法
JPH056877A (ja) * 1991-06-14 1993-01-14 Semiconductor Energy Lab Co Ltd 炭素被膜のエツチング方法
US6143125A (en) * 1996-09-20 2000-11-07 Nec Corporation Apparatus and method for dry etching
US6551924B1 (en) * 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
JP2021034655A (ja) * 2019-08-28 2021-03-01 東京エレクトロン株式会社 エッチング処理方法およびエッチング処理装置
CN112635317A (zh) * 2019-09-24 2021-04-09 东京毅力科创株式会社 蚀刻方法、损伤层的去除方法和存储介质

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124683A (en) * 1978-03-20 1979-09-27 Nippon Telegr & Teleph Corp <Ntt> Processing method of silicon wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124683A (en) * 1978-03-20 1979-09-27 Nippon Telegr & Teleph Corp <Ntt> Processing method of silicon wafer

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114235A (en) * 1981-01-08 1982-07-16 Toshiba Corp Cleaning of semiconductor substrate
JPS5893235A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体装置の製造方法
JPS58161327A (ja) * 1982-03-02 1983-09-24 テキサス・インスツルメンツ・インコ−ポレイテツド 異方性エツチ工程による直接モ−ト絶縁を行う集積回路装置製造方法
JPS59161823A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 異方性エツチング制御方法
JPS6098626A (ja) * 1983-11-02 1985-06-01 Oki Electric Ind Co Ltd 半導体層の表面処理方法
JPS6197824A (ja) * 1984-10-18 1986-05-16 Sanyo Electric Co Ltd 半導体装置のコンタクトホ−ル形成方法
JPS61281531A (ja) * 1985-06-07 1986-12-11 Hitachi Ltd プラズマ処理方法
JPH03145725A (ja) * 1989-10-20 1991-06-20 Internatl Business Mach Corp <Ibm> エツチング方法
JPH0494534A (ja) * 1990-08-10 1992-03-26 Dainippon Screen Mfg Co Ltd 基板の表面処理方法
JPH056877A (ja) * 1991-06-14 1993-01-14 Semiconductor Energy Lab Co Ltd 炭素被膜のエツチング方法
US6143125A (en) * 1996-09-20 2000-11-07 Nec Corporation Apparatus and method for dry etching
US6551924B1 (en) * 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
JP2021034655A (ja) * 2019-08-28 2021-03-01 東京エレクトロン株式会社 エッチング処理方法およびエッチング処理装置
CN112635317A (zh) * 2019-09-24 2021-04-09 东京毅力科创株式会社 蚀刻方法、损伤层的去除方法和存储介质

Also Published As

Publication number Publication date
JPH0123938B2 (enExample) 1989-05-09

Similar Documents

Publication Publication Date Title
US5015331A (en) Method of plasma etching with parallel plate reactor having a grid
US4255230A (en) Plasma etching process
KR930002679B1 (ko) 제조중에 반도체 장치의 물질 위의 유기막을 위한 애싱(ashing)방법
KR100267698B1 (ko) 에칭처리방법 및 에칭의 후처리방법 및 에칭설비
JPS56122129A (en) Manufacture of semiconductor device
TW428045B (en) Plasma cleaning and etching methods using non-global-warming compounds
JPS56158873A (en) Dry etching method
KR940022724A (ko) 드라이에칭방법
JPS5684476A (en) Etching method of gas plasma
IE801505L (en) Manufacturing a semiconductor device wherein first and¹second layers are formed
JPS62120041A (ja) 半導体装置の製造方法
US5567658A (en) Method for minimizing peeling at the surface of spin-on glasses
US5209803A (en) Parallel plate reactor and method of use
JPS5687667A (en) Reactive ion etching method
JPS57130431A (en) Manufacture of semiconductor device
JPS59222933A (ja) エツチング方法
JPS57114235A (en) Cleaning of semiconductor substrate
JPS648626A (en) Dry etching of silicon using bromine gas
JPS63127531A (ja) 半導体装置の製造方法
JPS5511167A (en) Dry etching method
JPS57138139A (en) Etching method for insulating film of semiconductor device
JPS56103424A (en) Plasma etching method
JP3830560B2 (ja) ドライエッチング方法
JPS61251138A (ja) ドライエツチング方法
JPS5687325A (en) Manufacture of semiconductor device