JPH01225322A - パーティクルが少ないか又は含まない液化二酸化炭素の供給 - Google Patents

パーティクルが少ないか又は含まない液化二酸化炭素の供給

Info

Publication number
JPH01225322A
JPH01225322A JP63051870A JP5187088A JPH01225322A JP H01225322 A JPH01225322 A JP H01225322A JP 63051870 A JP63051870 A JP 63051870A JP 5187088 A JP5187088 A JP 5187088A JP H01225322 A JPH01225322 A JP H01225322A
Authority
JP
Japan
Prior art keywords
liquefied
gas
particles
filter
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63051870A
Other languages
English (en)
Other versions
JPH0622224B2 (ja
Inventor
Kozo Moriya
守屋　晃三
Tadashi Okatsu
大勝　正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Oxygen Industries Ltd
Original Assignee
Osaka Oxygen Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Oxygen Industries Ltd filed Critical Osaka Oxygen Industries Ltd
Priority to JP63051870A priority Critical patent/JPH0622224B2/ja
Priority to US07/308,856 priority patent/US4972677A/en
Priority to DE8989302176T priority patent/DE68906293T2/de
Priority to EP89302176A priority patent/EP0332356B1/en
Publication of JPH01225322A publication Critical patent/JPH01225322A/ja
Publication of JPH0622224B2 publication Critical patent/JPH0622224B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C7/00—Methods or apparatus for discharging liquefied, solidified, or compressed gases from pressure vessels, not covered by another subclass
    • F17C7/02—Discharging liquefied gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2205/00—Vessel construction, in particular mounting arrangements, attachments or identifications means
    • F17C2205/03—Fluid connections, filters, valves, closure means or other attachments
    • F17C2205/0302—Fittings, valves, filters, or components in connection with the gas storage device
    • F17C2205/0341—Filters
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2221/00—Handled fluid, in particular type of fluid
    • F17C2221/01—Pure fluids
    • F17C2221/013—Carbone dioxide
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2223/00—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel
    • F17C2223/01—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel characterised by the phase
    • F17C2223/0146—Two-phase
    • F17C2223/0153—Liquefied gas, e.g. LPG, GPL
    • F17C2223/0161—Liquefied gas, e.g. LPG, GPL cryogenic, e.g. LNG, GNL, PLNG
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2223/00—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel
    • F17C2223/03—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel characterised by the pressure level
    • F17C2223/033—Small pressure, e.g. for liquefied gas
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2223/00—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel
    • F17C2223/04—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel characterised by other properties of handled fluid before transfer
    • F17C2223/042—Localisation of the removal point
    • F17C2223/046—Localisation of the removal point in the liquid
    • F17C2223/047—Localisation of the removal point in the liquid with a dip tube
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2225/00—Handled fluid after transfer, i.e. state of fluid after transfer from the vessel
    • F17C2225/01—Handled fluid after transfer, i.e. state of fluid after transfer from the vessel characterised by the phase
    • F17C2225/0146—Two-phase
    • F17C2225/0153—Liquefied gas, e.g. LPG, GPL
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2225/00—Handled fluid after transfer, i.e. state of fluid after transfer from the vessel
    • F17C2225/04—Handled fluid after transfer, i.e. state of fluid after transfer from the vessel characterised by other properties of handled fluid after transfer
    • F17C2225/042—Localisation of the filling point
    • F17C2225/043—Localisation of the filling point in the gas
    • F17C2225/044—Localisation of the filling point in the gas at several points, e.g. with a device for recondensing gas
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2227/00—Transfer of fluids, i.e. method or means for transferring the fluid; Heat exchange with the fluid
    • F17C2227/03—Heat exchange with the fluid
    • F17C2227/0302—Heat exchange with the fluid by heating
    • F17C2227/0304—Heat exchange with the fluid by heating using an electric heater
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2227/00—Transfer of fluids, i.e. method or means for transferring the fluid; Heat exchange with the fluid
    • F17C2227/03—Heat exchange with the fluid
    • F17C2227/0337—Heat exchange with the fluid by cooling
    • F17C2227/0341—Heat exchange with the fluid by cooling using another fluid
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2227/00—Transfer of fluids, i.e. method or means for transferring the fluid; Heat exchange with the fluid
    • F17C2227/03—Heat exchange with the fluid
    • F17C2227/0367—Localisation of heat exchange
    • F17C2227/0388—Localisation of heat exchange separate
    • F17C2227/039—Localisation of heat exchange separate on the pipes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2265/00—Effects achieved by gas storage or gas handling
    • F17C2265/01—Purifying the fluid
    • F17C2265/012—Purifying the fluid by filtering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 発明の分野 本発明は、パーティクルの少ない液化炭酸ガスの供給方
法及びその液化炭酸ガスを使用しての被洗浄物の表面上
のパーティクル、油分等を除去する方法に関する。
発明が解決すべき課題 液化ＣＯ□は溶剤としてすぐれた性質を有し、被洗浄物
表面のパーティクル、油分等を容易に除去することがで
きることは知られている。特に半導体工業に使用される
ウェーハーは、表面上に付着しているわずかな量のパー
ティクルを実質上完全に除去する必要がある。
本発明は市販の５ナイン（Ｎ）高純度液化ＣＯＺ中には
以下の表−１に示すような多量のパーティクルが混入し
ていることを発見した。
表　　　−１ 市販５Ｎ液化ＣＯ２中のパーティクル このようなＣＯ２のドライアイススノーによるウェーハ
ー等洗浄では、パーティクルを除去すると同時にパーテ
ィクルを新たに付着させてしまう為使用できなかった。
課題を解決すべき手段 一般に液化ＣＯ２中のパーティクルはフィルターで除去
するのが一般的である。液化ＣＯ３を液体のままフィル
ターに通じてみた結果を表−２に示す。すなわち液化Ｃ
Ｏ２中のパーティクルはフィルターではほとんど除去で
きない。
表　　　−２ そこで本発明者は液化ＣＯ□を蒸発させた後ガス状にて
フィルターを通した結果を表−３に示はパーティクルを
ほぼ１００％除去できることを発見した。
表　　−３ すなわち液化Ｃｏ　　を−度蒸発させた後ＣＯ□ガスと
してフィルターに通じパーティクルをほぼ１００％除去
した後、再液化すればパーティクルの少い液化ＣＯ２を
得ることが出来る。
本発明は上記発見に基づいてなされた。
本発明は、液化ＣＯを蒸発させ、ＣＯ□ガスとした後、
そのＣＯ２ガスをフィルターに通しＣＯ２ガス中のパー
ティクルを除去した後、冷却して再液化を行ない、その
パーティクルの少い又はパーティクルを含まない液化Ｃ
Ｏ２をノズルより噴出させ、微細なドライアイススノー
を含むＣＯ□ガス及び／又は液化ＣＯ２を吹きつけるこ
とにより被洗浄物の表面上のパーティクル等を除去する
方法に関する。
本発明の方法を第１図により説明する。第１図にパーテ
ィクルの少い液化炭酸ガスの供給方法を示す。
液化ＣＯ３貯槽１よりの液化ＣＯ２は蒸発器２によりＣ
Ｏ２ガスとなりフィルター３によりパーティクルを除去
された後、液化器４により再液化されニードル弁５、フ
ィルター６を通りノズル７より噴出され微細なドライア
イススノーとなりウェーハー等上に吹きつけられ、ウェ
ーハー等上のパーティクルを除去する。
フィルター３以後の配管、弁、ノズルはパーティクルの
発生を抑える為、内面が平滑で清浄な電解又は化学研磨
管を使用する。
ＣＯ貯槽１の代りに、市販のＣＯ２収用容器（ガス取り
用又は液取り用）を使用しても良い。
本発明において被洗浄物とはウェーハー、コンパクトデ
ィスク、レーザーディスク、レンズ等である。
一般に、ウェーハー等の表面に液体ＣＯ２を吹きつける
とウェーハー等に急冷され表面に露かできて、ウェーハ
ー等は水で濡れる。これはこのような水を乾燥するのに
時間がかかり、又このような水分の耐着によってウェー
ハー等の表面が汚れる可能性もある。このような不備を
避けるためにウェーハー等をＮ２雰囲気の室に置き、液
化ＣＯ２を吹きかけても良い。又ウェーハー等を電気ヒ
ーターによって加熱しても良い。上記両方の手段を同時
に採用しても良い。
このパーティクルの少い液化ＣＯ２を清浄な容器に充填
し供給すれば同一の目的を達成できるように思われるが
、この場合液化ＣＯ２保存タンクの内面を複合電解研磨
した後超純水洗浄をする必要があり、容器の製作に多く
の費用がかかり実際的でない。第１図に示す様にウェー
ハー洗浄を行う現場に液化器４を設置しそのまま液化Ｃ
Ｏ２を供給すれば費用もかかわらず実際的である。液化
器４を電解研磨管にて製作するのは容易である。
本方法によりウェーハー洗浄等に使用するパーティクル
の少い液化ＣＯ２を現場にて安く供給できる。
【図面の簡単な説明】
第１図は本発明方法を実施するための好ましい態様の装
置を示す。 １・・・液化Ｃｏ　　貯槽　　　２・・・ＣＯ３蒸発器
３・・・フィルター　　　　　４・・・液化器５・・・
ニードル弁　　　　　６・・・フィルター７・・・ノズ
ル 特許出願人　大阪酸素工業株式会社 （外４名）

Claims (1)

  1. 【特許請求の範囲】 １、液化ＣＯ＿２を蒸発させ、ＣＯ＿２ガスとした後、
    そのＣＯ＿２ガスをフィルターに通しＣＯ＿２ガス中の
    パーティクルを除去した後、冷却して再液化することを
    特徴とするパーティクルの少ない又はパーティクルを含
    まない液化ＣＯ＿２を供給する方法。 ２、特許請求の範囲第１項記載のパーティクルの少ない
    又はパーティクルを含まない液化ＣＯ＿２をノズルより
    噴出させ、ドライアイススノーを含むＣＯ＿２ガス及び
    ／又は液化ＣＯ＿２を吹きつけることにより被洗浄物の
    表面上のパーティクル等を除去する方法。 ３、その被洗浄物が窒素雰囲気中で保持された状態でド
    ライアイススノーを吹きつける特許請求の範囲第２項記
    載の方法。 ４、その被洗浄物が加熱された状態で、ドライアイスス
    ノーを吹きつける特許請求の範囲２又は３項記載の方法
    。
JP63051870A 1988-03-05 1988-03-05 パーティクルが少ないか又は含まない液化二酸化炭素の供給 Expired - Lifetime JPH0622224B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63051870A JPH0622224B2 (ja) 1988-03-05 1988-03-05 パーティクルが少ないか又は含まない液化二酸化炭素の供給
US07/308,856 US4972677A (en) 1988-03-05 1989-02-09 Method of cleaning wafers or the like
DE8989302176T DE68906293T2 (de) 1988-03-05 1989-03-03 Zufuhr von kohlendioxid.
EP89302176A EP0332356B1 (en) 1988-03-05 1989-03-03 Supply of carbon dioxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63051870A JPH0622224B2 (ja) 1988-03-05 1988-03-05 パーティクルが少ないか又は含まない液化二酸化炭素の供給

Publications (2)

Publication Number Publication Date
JPH01225322A true JPH01225322A (ja) 1989-09-08
JPH0622224B2 JPH0622224B2 (ja) 1994-03-23

Family

ID=12898914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63051870A Expired - Lifetime JPH0622224B2 (ja) 1988-03-05 1988-03-05 パーティクルが少ないか又は含まない液化二酸化炭素の供給

Country Status (4)

Country Link
US (1) US4972677A (ja)
EP (1) EP0332356B1 (ja)
JP (1) JPH0622224B2 (ja)
DE (1) DE68906293T2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH037984U (ja) * 1989-06-06 1991-01-25
CN112709061A (zh) * 2020-12-22 2021-04-27 抚州市鸿源纺织科技有限公司 一种纺织设备

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179840A (en) * 1989-10-16 1993-01-19 The Boc Group Plc Cryogenic treatment methods
US5062898A (en) * 1990-06-05 1991-11-05 Air Products And Chemicals, Inc. Surface cleaning using a cryogenic aerosol
US5140822A (en) * 1991-02-08 1992-08-25 The Coca-Cola Company Method and apparatus for chilling and carbonating a liquid using liquid carbon dioxide
JP2863663B2 (ja) * 1991-04-18 1999-03-03 大阪酸素工業株式会社 光学式露点計の反射鏡の洗浄方法及び洗浄装置付き光学式露点計
US5482371A (en) * 1991-04-18 1996-01-09 Osaka Sanso Kogyo Ltd. Method and apparatus for measuring the dew point and/or frost point of a gas having low water content
US5470154A (en) * 1991-04-18 1995-11-28 Osaka Sanso Kogyo Ltd. Method of cleaning the reflector mirror in an optical dew point meter and an optical dew point meter equipped with a cleaning device
US5315793A (en) † 1991-10-01 1994-05-31 Hughes Aircraft Company System for precision cleaning by jet spray
US5294261A (en) * 1992-11-02 1994-03-15 Air Products And Chemicals, Inc. Surface cleaning using an argon or nitrogen aerosol
US5354384A (en) * 1993-04-30 1994-10-11 Hughes Aircraft Company Method for cleaning surface by heating and a stream of snow
US5931721A (en) * 1994-11-07 1999-08-03 Sumitomo Heavy Industries, Ltd. Aerosol surface processing
US5967156A (en) * 1994-11-07 1999-10-19 Krytek Corporation Processing a surface
FR2747595B1 (fr) * 1996-04-19 1998-08-21 Air Liquide Procede et installation de fourniture d'helium ultra-pur
US5961732A (en) * 1997-06-11 1999-10-05 Fsi International, Inc Treating substrates by producing and controlling a cryogenic aerosol
US6036786A (en) * 1997-06-11 2000-03-14 Fsi International Inc. Eliminating stiction with the use of cryogenic aerosol
FR2781868B1 (fr) * 1998-07-29 2000-09-15 Air Liquide Installation et procede de fourniture d'helium a plusieurs lignes de production
US6327872B1 (en) * 2000-01-05 2001-12-11 The Boc Group, Inc. Method and apparatus for producing a pressurized high purity liquid carbon dioxide stream
KR100385432B1 (ko) 2000-09-19 2003-05-27 주식회사 케이씨텍 표면 세정용 에어로졸 생성 시스템
KR101284395B1 (ko) * 2002-02-19 2013-07-09 프랙스에어 테크놀로지, 인코포레이티드 기체로부터 오염물질을 제거하는 방법
US7297055B2 (en) * 2004-03-16 2007-11-20 Raytheon Company Vacuum-insulating system and method for generating a high-level vacuum
KR20040101948A (ko) * 2004-05-31 2004-12-03 (주)케이.씨.텍 표면세정용 승화성 고체입자 분사용 노즐 및 이를 이용한 세정방법
DE102005035432A1 (de) * 2005-07-28 2007-02-01 Linde Ag Bereitstellen blasenfreien Kohlendioxids
DE102006009965B4 (de) * 2006-03-03 2011-07-07 MAG IAS GmbH, 73033 Absaug-Anlage für eine spanabhebende Bearbeitungs-Maschine
US20090107526A1 (en) * 2007-10-31 2009-04-30 Zhuge Jun Co2 system for polymer film cleaning
WO2012111139A1 (ja) * 2011-02-18 2012-08-23 オルガノ株式会社 フィルターの清浄化方法、及び被処理体の洗浄または乾燥方法
US10395930B2 (en) * 2016-12-30 2019-08-27 Semes Co., Ltd. Substrate treating apparatus and substrate treating method
KR102267914B1 (ko) 2019-10-31 2021-06-22 세메스 주식회사 약액 공급 장치, 약액의 파티클 제거 방법, 노즐 유닛 및 기판 처리 장치
KR102637623B1 (ko) * 2022-10-14 2024-02-16 주식회사 케이엠텍 드라이아이스 펠릿타이저 듀얼 생성장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55106538A (en) * 1979-02-13 1980-08-15 Shimadzu Corp Removing method of surface from substance
JPS6328403A (ja) * 1986-07-21 1988-02-06 Mitsubishi Kakoki Kaisha Ltd 高圧炭酸ガス抽出装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL25773C (ja) * 1929-04-19
BE383102A (ja) * 1930-11-13
DE2539499A1 (de) * 1975-09-05 1977-03-17 Dieter P Kessler Verfahren zur abloesung klebriger, an gegenstaenden aller art sowie an flaechen haftender substanzen
US4492593A (en) * 1983-06-06 1985-01-08 Shell Oil Company Sequential liquid solid desiccation of supercritical and nearcritical CO.sub. 2
JPS60165726A (ja) * 1984-02-08 1985-08-28 Japan Organo Co Ltd 半導体ウエハ−の洗浄方法
JPS62136372A (ja) * 1985-12-03 1987-06-19 Honda Motor Co Ltd ブラスト方法及び装置
US4717406A (en) * 1986-07-07 1988-01-05 Liquid Air Corporation Cryogenic liquified gas purification method and apparatus
DE3804694A1 (de) * 1987-06-23 1989-01-05 Taiyo Sanso Co Ltd Verfahren zur oberflaechenbearbeitung fuer halbleiter-wafer und vorrichtung zur durchfuehrung des verfahrens

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55106538A (en) * 1979-02-13 1980-08-15 Shimadzu Corp Removing method of surface from substance
JPS6328403A (ja) * 1986-07-21 1988-02-06 Mitsubishi Kakoki Kaisha Ltd 高圧炭酸ガス抽出装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH037984U (ja) * 1989-06-06 1991-01-25
CN112709061A (zh) * 2020-12-22 2021-04-27 抚州市鸿源纺织科技有限公司 一种纺织设备

Also Published As

Publication number Publication date
US4972677A (en) 1990-11-27
EP0332356B1 (en) 1993-05-05
EP0332356A3 (en) 1990-04-04
DE68906293D1 (de) 1993-06-09
JPH0622224B2 (ja) 1994-03-23
EP0332356A2 (en) 1989-09-13
DE68906293T2 (de) 1993-08-12

Similar Documents

Publication Publication Date Title
JPH01225322A (ja) パーティクルが少ないか又は含まない液化二酸化炭素の供給
JP2922791B2 (ja) 液化ガスを使用した安価な洗浄装置
US6852173B2 (en) Liquid-assisted cryogenic cleaning
US6203406B1 (en) Aerosol surface processing
JP2567341B2 (ja) 窒素エーロゾルを用いる表面清浄方法
CA2043445C (en) Surface cleaning using a cryogenic aerosol
US6343609B1 (en) Cleaning with liquified gas and megasonics
US20010008800A1 (en) Removal of polishing residue from substrate using supercritical fluid process
JPH1099806A (ja) 化学的誘導及び抽出による無機汚染物質の除去方法
US6449873B1 (en) Apparatus and method for dry cleaning of substrates using clusters
JPH0349224A (ja) 基板の処理方法
US20040029494A1 (en) Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
JPH04354334A (ja) 半導体の洗浄方法及び洗浄装置
US20040244818A1 (en) System and method for cleaning of workpieces using supercritical carbon dioxide
JP2007125508A (ja) ドライアイス洗浄装置
JPH0547732A (ja) 精密洗浄方法および精密洗浄装置
JP2003117510A (ja) 洗浄装置
JP2001180924A (ja) 精製液化炭酸ガスの供給方法及びその装置並びにそれで得られた精製液化炭酸ガスを用いた洗浄方法
JPH02277236A (ja) 洗浄装置
JP3355460B2 (ja) 固体アルゴンによる洗浄方法及び装置
JP2000021830A (ja) シリコンウエハの洗浄装置
JP2837826B2 (ja) 洗浄装置及び洗浄方法
JPH1050648A (ja) 超臨界流体洗浄装置
JPH024402A (ja) 気体中の有機溶剤の分離装置
KR100474594B1 (ko) 반도체 소자의 세정방법

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term