JPH01173932U - - Google Patents

Info

Publication number
JPH01173932U
JPH01173932U JP6801388U JP6801388U JPH01173932U JP H01173932 U JPH01173932 U JP H01173932U JP 6801388 U JP6801388 U JP 6801388U JP 6801388 U JP6801388 U JP 6801388U JP H01173932 U JPH01173932 U JP H01173932U
Authority
JP
Japan
Prior art keywords
low
substrate
temperature
processing apparatus
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6801388U
Other languages
English (en)
Other versions
JPH0610676Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988068013U priority Critical patent/JPH0610676Y2/ja
Publication of JPH01173932U publication Critical patent/JPH01173932U/ja
Application granted granted Critical
Publication of JPH0610676Y2 publication Critical patent/JPH0610676Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】
第１図、本考案の一実施例の平行平板形ドライ
エツチング装置の要部縦断面図である。 １…真空反応処理室、２…試料台、３…試料、
４…電源、５…冷却器、６…ケース、７…パージ
ガス供給系、８…パージガス流。

Claims (1)

    【実用新案登録請求の範囲】
  1. 真空室内で低温と温度制御された試料台上に被
    エツチング基板を載置し、前記真空室内に励起し
    たプラズマにより前記基板の表面処理を行なう低
    温プラズマ処理装置において、前記試料台を冷却
    するため導入する液化ガスの供給配管および配管
    接続部周囲に、ドライガスを供給し低温状態の機
    構部表面に生ずる露結現象を防止する手段を設け
    たことを特徴とする低温プラズマ処理装置。
JP1988068013U 1988-05-25 1988-05-25 低温プラズマ処理装置 Expired - Lifetime JPH0610676Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988068013U JPH0610676Y2 (ja) 1988-05-25 1988-05-25 低温プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988068013U JPH0610676Y2 (ja) 1988-05-25 1988-05-25 低温プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPH01173932U true JPH01173932U (ja) 1989-12-11
JPH0610676Y2 JPH0610676Y2 (ja) 1994-03-16

Family

ID=31293343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988068013U Expired - Lifetime JPH0610676Y2 (ja) 1988-05-25 1988-05-25 低温プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPH0610676Y2 (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100420A (en) * 1980-01-17 1981-08-12 Toshiba Corp Plasma etching method for oxidized silicon film
JPS61155031U (ja) * 1985-03-19 1986-09-26
JPS6246265U (ja) * 1985-09-10 1987-03-20
JPS6265836U (ja) * 1985-10-16 1987-04-23

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100420A (en) * 1980-01-17 1981-08-12 Toshiba Corp Plasma etching method for oxidized silicon film
JPS61155031U (ja) * 1985-03-19 1986-09-26
JPS6246265U (ja) * 1985-09-10 1987-03-20
JPS6265836U (ja) * 1985-10-16 1987-04-23

Also Published As

Publication number Publication date
JPH0610676Y2 (ja) 1994-03-16

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