JPS6223856U - - Google Patents
Info
- Publication number
- JPS6223856U JPS6223856U JP11567785U JP11567785U JPS6223856U JP S6223856 U JPS6223856 U JP S6223856U JP 11567785 U JP11567785 U JP 11567785U JP 11567785 U JP11567785 U JP 11567785U JP S6223856 U JPS6223856 U JP S6223856U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- ejected
- dispersion plate
- gases
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
第1図は実施例の概略図、第2図は従来の薄膜
形成装置の概略図である。 1……真空室、2……分散板、4……基板、6
……パイプ、8……ヒータ。
形成装置の概略図である。 1……真空室、2……分散板、4……基板、6
……パイプ、8……ヒータ。
Claims (1)
- 減圧した真空室内に導入した二種以上のガスを
分散板の孔から、ヒータで加熱された基板に向け
て噴出させ、前記基板の熱でもつて噴出ガスを化
学反応させて基板上に薄膜を形成させる薄膜形成
装置において、前記分散板を冷却する冷却装置を
設けたことを特徴とする薄膜形成装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985115677U JPH0714362Y2 (ja) | 1985-07-27 | 1985-07-27 | 薄膜形成装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985115677U JPH0714362Y2 (ja) | 1985-07-27 | 1985-07-27 | 薄膜形成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6223856U true JPS6223856U (ja) | 1987-02-13 |
JPH0714362Y2 JPH0714362Y2 (ja) | 1995-04-05 |
Family
ID=30999554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985115677U Expired - Lifetime JPH0714362Y2 (ja) | 1985-07-27 | 1985-07-27 | 薄膜形成装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0714362Y2 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55103262U (ja) * | 1979-01-09 | 1980-07-18 | ||
JPS57104659A (en) * | 1980-12-19 | 1982-06-29 | Asahi Glass Co Ltd | Discharger for cvd device |
JPS5869705A (ja) * | 1981-10-20 | 1983-04-26 | Japan Metals & Chem Co Ltd | 超硬高純度窒化珪素の製造装置とその製造方法 |
-
1985
- 1985-07-27 JP JP1985115677U patent/JPH0714362Y2/ja not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55103262U (ja) * | 1979-01-09 | 1980-07-18 | ||
JPS57104659A (en) * | 1980-12-19 | 1982-06-29 | Asahi Glass Co Ltd | Discharger for cvd device |
JPS5869705A (ja) * | 1981-10-20 | 1983-04-26 | Japan Metals & Chem Co Ltd | 超硬高純度窒化珪素の製造装置とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0714362Y2 (ja) | 1995-04-05 |