JP7728243B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP7728243B2
JP7728243B2 JP2022505960A JP2022505960A JP7728243B2 JP 7728243 B2 JP7728243 B2 JP 7728243B2 JP 2022505960 A JP2022505960 A JP 2022505960A JP 2022505960 A JP2022505960 A JP 2022505960A JP 7728243 B2 JP7728243 B2 JP 7728243B2
Authority
JP
Japan
Prior art keywords
type
region
wiring
drain
contact region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022505960A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021182211A1 (https=
Inventor
剛志 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of JPWO2021182211A1 publication Critical patent/JPWO2021182211A1/ja
Application granted granted Critical
Publication of JP7728243B2 publication Critical patent/JP7728243B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/153—LDMOS having built-in components the built-in component being PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/655—Lateral DMOS [LDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022505960A 2020-03-13 2021-03-03 半導体装置およびその製造方法 Active JP7728243B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020044368 2020-03-13
JP2020044368 2020-03-13
PCT/JP2021/008083 WO2021182211A1 (ja) 2020-03-13 2021-03-03 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2021182211A1 JPWO2021182211A1 (https=) 2021-09-16
JP7728243B2 true JP7728243B2 (ja) 2025-08-22

Family

ID=77671633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022505960A Active JP7728243B2 (ja) 2020-03-13 2021-03-03 半導体装置およびその製造方法

Country Status (5)

Country Link
US (1) US11984502B2 (https=)
JP (1) JP7728243B2 (https=)
CN (1) CN115280514B (https=)
DE (1) DE112021001612T5 (https=)
WO (1) WO2021182211A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20260019292A (ko) * 2024-08-01 2026-02-10 삼성전자주식회사 전력 반도체 소자

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044431A (ja) 1999-05-27 2001-02-16 Fuji Electric Co Ltd 半導体装置
JP2002314066A (ja) 2001-04-13 2002-10-25 Sanyo Electric Co Ltd Ｍｏｓ半導体装置およびその製造方法
JP2006310719A (ja) 2005-03-30 2006-11-09 Sanyo Electric Co Ltd 半導体装置
JP2007180244A (ja) 2005-12-27 2007-07-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2008218446A (ja) 2007-02-28 2008-09-18 Oki Electric Ind Co Ltd Ｍｏｓトランジスタとその製造方法
WO2012127960A1 (ja) 2011-03-18 2012-09-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2018011089A (ja) 2017-10-23 2018-01-18 ローム株式会社 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193065A (ja) * 1983-04-15 1984-11-01 Matsushita Electric Works Ltd トランジスタ装置
JPH01138753A (ja) * 1987-11-26 1989-05-31 Fuji Electric Co Ltd 半導体装置の内部漏洩電流防止構造
JP2629426B2 (ja) * 1990-09-19 1997-07-09 富士電機株式会社 ２重拡散型ｍｉｓｆｅｔを備えた半導体装置及びその製造方法
US6911694B2 (en) * 2001-06-27 2005-06-28 Ricoh Company, Ltd. Semiconductor device and method for fabricating such device
JP4420196B2 (ja) * 2003-12-12 2010-02-24 三菱電機株式会社 誘電体分離型半導体装置およびその製造方法
CN100474588C (zh) * 2005-03-30 2009-04-01 三洋电机株式会社 半导体装置
JP5431637B2 (ja) * 2006-09-29 2014-03-05 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP5700649B2 (ja) 2011-01-24 2015-04-15 旭化成エレクトロニクス株式会社 半導体装置の製造方法
JP6509665B2 (ja) * 2015-07-23 2019-05-08 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044431A (ja) 1999-05-27 2001-02-16 Fuji Electric Co Ltd 半導体装置
JP2002314066A (ja) 2001-04-13 2002-10-25 Sanyo Electric Co Ltd Ｍｏｓ半導体装置およびその製造方法
JP2006310719A (ja) 2005-03-30 2006-11-09 Sanyo Electric Co Ltd 半導体装置
JP2007180244A (ja) 2005-12-27 2007-07-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2008218446A (ja) 2007-02-28 2008-09-18 Oki Electric Ind Co Ltd Ｍｏｓトランジスタとその製造方法
WO2012127960A1 (ja) 2011-03-18 2012-09-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2018011089A (ja) 2017-10-23 2018-01-18 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
CN115280514A (zh) 2022-11-01
DE112021001612T5 (de) 2022-12-29
CN115280514B (zh) 2025-12-09
JPWO2021182211A1 (https=) 2021-09-16
US20230045793A1 (en) 2023-02-16
WO2021182211A1 (ja) 2021-09-16
US11984502B2 (en) 2024-05-14

Similar Documents

Publication Publication Date Title
JP4860929B2 (ja) 半導体装置およびその製造方法
US7649223B2 (en) Semiconductor device having superjunction structure and method for manufacturing the same
JP5426112B2 (ja) 半導体装置およびその製造方法
JP6198292B2 (ja) 半導体装置および半導体装置の製造方法
JP7526010B2 (ja) 半導体装置
TW201801318A (zh) 半導體裝置及半導體裝置之製造方法
CN101964343A (zh) 半导体装置
US7838927B2 (en) Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding device
CN113540244A (zh) 用于沟槽场板功率mosfet的终端
JP7007971B2 (ja) 半導体装置
JP6234715B2 (ja) 半導体装置
JP6065555B2 (ja) 半導体装置
JP7728243B2 (ja) 半導体装置およびその製造方法
EP4099393A1 (en) Semiconductor device
KR20110078621A (ko) 반도체 소자 및 그 제조 방법
JP2006526287A (ja) 半導体装置のための終端構造及びこの構造の製造方法
KR100779005B1 (ko) 반도체 장치 및 그 제조 방법
CN111200020B (zh) 高耐压半导体元件及其制造方法
JP4328797B2 (ja) 半導体装置
JP6533266B2 (ja) 半導体装置
JP7737977B2 (ja) 半導体装置およびその製造方法
JP2009043795A (ja) 半導体装置
JP4425295B2 (ja) 半導体装置
JP6061979B2 (ja) 半導体装置
JP2023171058A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240105

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250306

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250428

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250717

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250812

R150 Certificate of patent or registration of utility model

Ref document number: 7728243

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150