CN115280514B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法

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Publication number
CN115280514B
CN115280514B CN202180020822.4A CN202180020822A CN115280514B CN 115280514 B CN115280514 B CN 115280514B CN 202180020822 A CN202180020822 A CN 202180020822A CN 115280514 B CN115280514 B CN 115280514B
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China
Prior art keywords
type
region
wiring
drain
contact region
Prior art date
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Active
Application number
CN202180020822.4A
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English (en)
Chinese (zh)
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CN115280514A (zh
Inventor
石田刚志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
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Publication of CN115280514A publication Critical patent/CN115280514A/zh
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Publication of CN115280514B publication Critical patent/CN115280514B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/153—LDMOS having built-in components the built-in component being PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/655—Lateral DMOS [LDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202180020822.4A 2020-03-13 2021-03-03 半导体器件及其制造方法 Active CN115280514B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020044368 2020-03-13
JP2020-044368 2020-03-13
PCT/JP2021/008083 WO2021182211A1 (ja) 2020-03-13 2021-03-03 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
CN115280514A CN115280514A (zh) 2022-11-01
CN115280514B true CN115280514B (zh) 2025-12-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180020822.4A Active CN115280514B (zh) 2020-03-13 2021-03-03 半导体器件及其制造方法

Country Status (5)

Country Link
US (1) US11984502B2 (https=)
JP (1) JP7728243B2 (https=)
CN (1) CN115280514B (https=)
DE (1) DE112021001612T5 (https=)
WO (1) WO2021182211A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20260019292A (ko) * 2024-08-01 2026-02-10 삼성전자주식회사 전력 반도체 소자

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127573A (ja) * 1990-09-19 1992-04-28 Fuji Electric Co Ltd ２重拡散型ｍｉｓｆｅｔを備えた半導体装置及びその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193065A (ja) * 1983-04-15 1984-11-01 Matsushita Electric Works Ltd トランジスタ装置
JPH01138753A (ja) * 1987-11-26 1989-05-31 Fuji Electric Co Ltd 半導体装置の内部漏洩電流防止構造
JP4797225B2 (ja) * 1999-05-27 2011-10-19 富士電機株式会社 半導体装置
JP2002314066A (ja) * 2001-04-13 2002-10-25 Sanyo Electric Co Ltd Ｍｏｓ半導体装置およびその製造方法
US6911694B2 (en) * 2001-06-27 2005-06-28 Ricoh Company, Ltd. Semiconductor device and method for fabricating such device
JP4420196B2 (ja) * 2003-12-12 2010-02-24 三菱電機株式会社 誘電体分離型半導体装置およびその製造方法
JP4906281B2 (ja) * 2005-03-30 2012-03-28 オンセミコンダクター・トレーディング・リミテッド 半導体装置
CN100474588C (zh) * 2005-03-30 2009-04-01 三洋电机株式会社 半导体装置
JP2007180244A (ja) * 2005-12-27 2007-07-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5431637B2 (ja) * 2006-09-29 2014-03-05 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP2008218446A (ja) * 2007-02-28 2008-09-18 Oki Electric Ind Co Ltd Ｍｏｓトランジスタとその製造方法
JP5700649B2 (ja) 2011-01-24 2015-04-15 旭化成エレクトロニクス株式会社 半導体装置の製造方法
JP5702460B2 (ja) * 2011-03-18 2015-04-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6509665B2 (ja) * 2015-07-23 2019-05-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6533266B2 (ja) * 2017-10-23 2019-06-19 ローム株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127573A (ja) * 1990-09-19 1992-04-28 Fuji Electric Co Ltd ２重拡散型ｍｉｓｆｅｔを備えた半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN115280514A (zh) 2022-11-01
DE112021001612T5 (de) 2022-12-29
JPWO2021182211A1 (https=) 2021-09-16
JP7728243B2 (ja) 2025-08-22
US20230045793A1 (en) 2023-02-16
WO2021182211A1 (ja) 2021-09-16
US11984502B2 (en) 2024-05-14

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