JP7724570B2 - 電子半導体部品、および電子半導体部品用の前処理された複合基板の製造方法 - Google Patents

電子半導体部品、および電子半導体部品用の前処理された複合基板の製造方法

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JP7724570B2
JP7724570B2 JP2023535862A JP2023535862A JP7724570B2 JP 7724570 B2 JP7724570 B2 JP 7724570B2 JP 2023535862 A JP2023535862 A JP 2023535862A JP 2023535862 A JP2023535862 A JP 2023535862A JP 7724570 B2 JP7724570 B2 JP 7724570B2
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zone
semiconductor component
crystal
electronic semiconductor
region
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JP2023553477A5 (https=
JP2023553477A (ja
JPWO2022128818A5 (https=
Inventor
カサト，コンスタンティン
クリッペンドルフ，フロリアン
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エムアイツー‐ファクトリー ジーエムビーエイチ
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Priority claimed from DE102020134222.5A external-priority patent/DE102020134222A1/de
Priority claimed from DE102021109690.1A external-priority patent/DE102021109690A1/de
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Publication of JP2023553477A5 publication Critical patent/JP2023553477A5/ja
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Priority to JP2025126662A priority Critical patent/JP2025156404A/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP2023535862A 2020-12-18 2021-12-10 電子半導体部品、および電子半導体部品用の前処理された複合基板の製造方法 Active JP7724570B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025126662A JP2025156404A (ja) 2020-12-18 2025-07-29 電子半導体部品、および電子半導体部品用の前処理された複合基板の製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102020134222.5 2020-12-18
DE102020134222.5A DE102020134222A1 (de) 2020-12-18 2020-12-18 Verfahren zur Herstellung eines vorbehandelten Verbundsubstrats und vorbehandeltes Verbundsubstrat
DE102021109690.1A DE102021109690A1 (de) 2021-04-16 2021-04-16 Elektronisches Halbleiterbauelement und Verfahren zur Herstellung eines vorbehandelten Verbundsubstrats für ein elektronisches Halbleiterbauelement
DE102021109690.1 2021-04-16
PCT/EP2021/085296 WO2022128818A1 (de) 2020-12-18 2021-12-10 Elektronisches halbleiterbauelement und verfahren zur herstellung eines vorbehandelten verbundsubstrats für ein elektronisches halbleiterbauelement

Related Child Applications (1)

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JP2025126662A Division JP2025156404A (ja) 2020-12-18 2025-07-29 電子半導体部品、および電子半導体部品用の前処理された複合基板の製造方法

Publications (4)

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JP2023553477A JP2023553477A (ja) 2023-12-21
JP2023553477A5 JP2023553477A5 (https=) 2024-12-17
JPWO2022128818A5 JPWO2022128818A5 (https=) 2024-12-17
JP7724570B2 true JP7724570B2 (ja) 2025-08-18

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JP2025126662A Pending JP2025156404A (ja) 2020-12-18 2025-07-29 電子半導体部品、および電子半導体部品用の前処理された複合基板の製造方法

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US (1) US20240055472A1 (https=)
EP (1) EP4264672A1 (https=)
JP (2) JP7724570B2 (https=)
WO (1) WO2022128818A1 (https=)

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DE102023134623A1 (de) * 2023-12-11 2025-06-12 mi2-factory GmbH Verfahren zur Implantation von Dotieratomen in ein Substrat

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110198613A1 (en) 2010-02-17 2011-08-18 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
WO2013054580A1 (ja) 2011-10-13 2013-04-18 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置、炭化珪素基板の製造方法、および炭化珪素半導体装置の製造方法
JP2019121797A (ja) 2017-12-27 2019-07-22 インフィニオン テクノロジーズ アクチエンゲゼルシャフトＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＡＧ ワイドバンドギャップ半導体デバイスおよびワイドバンドギャップ半導体デバイスの形成方法
US20200006496A1 (en) 2017-03-03 2020-01-02 Abb Schweiz Ag Silicon carbide superjunction power semiconductor device and method for manufacturing the same
JP2020512682A (ja) 2016-12-08 2020-04-23 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． イオン注入側壁を有するゲート・トレンチを備えるパワー半導体デバイス及び関連方法
JP2020188039A (ja) 2019-05-09 2020-11-19 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
WO2020229639A1 (de) 2019-05-16 2020-11-19 mi2-factory GmbH Verfahren zur herstellung von halbleiterbauelementen und halbleiterbauelement

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR9806136A (pt) * 1997-08-27 1999-10-26 Matsushita Eletric Industrtial Substrato de carbureto de silìco e método para a produção do substrato, e dispositivo semicondutor utilizand o substrato.
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
US7404858B2 (en) * 2005-09-16 2008-07-29 Mississippi State University Method for epitaxial growth of silicon carbide
EP2040285A1 (en) * 2007-09-19 2009-03-25 S.O.I. TEC Silicon Method for fabricating a mixed orientation substrate
JP5721351B2 (ja) * 2009-07-21 2015-05-20 ローム株式会社 半導体装置
WO2012026089A1 (ja) * 2010-08-27 2012-03-01 国立大学法人奈良先端科学技術大学院大学 ＳｉＣ半導体素子
JP5939624B2 (ja) * 2012-03-30 2016-06-22 国立研究開発法人産業技術総合研究所 縦型高耐圧半導体装置の製造方法および縦型高耐圧半導体装置
JP6197995B2 (ja) * 2013-08-23 2017-09-20 富士電機株式会社 ワイドバンドギャップ絶縁ゲート型半導体装置
US9219049B2 (en) * 2013-12-13 2015-12-22 Infineon Technologies Ag Compound structure and method for forming a compound structure
US10861931B2 (en) * 2016-12-08 2020-12-08 Cree, Inc. Power semiconductor devices having gate trenches and buried edge terminations and related methods
US10615274B2 (en) * 2017-12-21 2020-04-07 Cree, Inc. Vertical semiconductor device with improved ruggedness
JP6563093B1 (ja) * 2018-08-10 2019-08-21 ローム株式会社 ＳｉＣ半導体装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110198613A1 (en) 2010-02-17 2011-08-18 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
JP2011171421A (ja) 2010-02-17 2011-09-01 Renesas Electronics Corp 半導体装置およびその製造方法
WO2013054580A1 (ja) 2011-10-13 2013-04-18 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置、炭化珪素基板の製造方法、および炭化珪素半導体装置の製造方法
US20130092956A1 (en) 2011-10-13 2013-04-18 Sumitomo Electric Industries, Ltd. Silicon carbide substrate, silicon carbide semiconductor device, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device
JP2020512682A (ja) 2016-12-08 2020-04-23 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． イオン注入側壁を有するゲート・トレンチを備えるパワー半導体デバイス及び関連方法
US20200006496A1 (en) 2017-03-03 2020-01-02 Abb Schweiz Ag Silicon carbide superjunction power semiconductor device and method for manufacturing the same
JP2020511773A (ja) 2017-03-03 2020-04-16 アーベーベー・シュバイツ・アーゲー 炭化ケイ素スーパージャンクションパワー半導体デバイスおよびその製造方法
JP2019121797A (ja) 2017-12-27 2019-07-22 インフィニオン テクノロジーズ アクチエンゲゼルシャフトＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＡＧ ワイドバンドギャップ半導体デバイスおよびワイドバンドギャップ半導体デバイスの形成方法
JP2020188039A (ja) 2019-05-09 2020-11-19 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
WO2020229639A1 (de) 2019-05-16 2020-11-19 mi2-factory GmbH Verfahren zur herstellung von halbleiterbauelementen und halbleiterbauelement
JP2022532048A (ja) 2019-05-16 2022-07-13 エムアイツー‐ファクトリー ジーエムビーエイチ 半導体部品および半導体部品を製造するための装置

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JP2025156404A (ja) 2025-10-14
WO2022128818A1 (de) 2022-06-23
US20240055472A1 (en) 2024-02-15
JP2023553477A (ja) 2023-12-21
EP4264672A1 (de) 2023-10-25

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