JP2022532048A - 半導体部品および半導体部品を製造するための装置 - Google Patents
半導体部品および半導体部品を製造するための装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 245
- 239000002019 doping agent Substances 0.000 claims abstract description 97
- 238000005468 ion implantation Methods 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 26
- 230000007547 defect Effects 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 238000002513 implantation Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 83
- 238000002347 injection Methods 0.000 claims description 46
- 239000007924 injection Substances 0.000 claims description 46
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 20
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 6
- 239000002346 layers by function Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 description 24
- 230000008569 process Effects 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000007704 transition Effects 0.000 description 12
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- 238000010521 absorption reaction Methods 0.000 description 8
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- 238000001465 metallisation Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
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- 230000002285 radioactive effect Effects 0.000 description 2
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Abstract
Description
-4μmから300μmの厚さの半導体材料の基板を提供する。
-エネルギーフィルタを使用して基板にイオン注入することにより、半導体部品のドープされたドリフトゾーンを生成する。エネルギーフィルタは、ドーパントの深さプロファイルを設定するための事前定義された構造プロファイルを備えた微細構造膜である。注入によって基板に生成された欠陥深さプロファイル、ドリフトゾーンの生成中にドリフトゾーン全体がドープされる。ドリフトゾーンの生成は、エピタクティック堆積なしで完全に実行される。
図1は、本発明で使用することができる、出発結晶の薄い基板プレートへの分割の概略図である。
-4μmから300μmの厚さの半導体材料の基板を提供する。
-エネルギーフィルタを使用して基板にイオン注入することにより、半導体部品のドープされたドリフトゾーンを生成する。エネルギーフィルタは、ドーパントの深さプロファイルを設定するための事前定義された構造プロファイルを備えた微細構造膜である。注入によって基板に生成された欠陥深さプロファイル、ドリフトゾーンの生成中にドリフトゾーン全体がドープされる。ドリフトゾーンの生成は、エピタクティック堆積なしで完全に実行される。
Claims (31)
- 4μmから300μmの厚さの半導体材料の基板(12)を提供する工程と、
エネルギーフィルタ(20)を用いて前記基板(12)にイオン注入することにより、半導体部品(4)のドープドリフトゾーン(21)を生成する工程であって、前記エネルギフィルタ(20)は、注入によって基板(12)内に生成されたドーパント深さプロファイルおよび/または欠陥深度プロファイルを設定するための事前定義された構造プロファイルを有する微細構造膜であり、前記ドリフトゾーン(21)が生成されるときに前記ドリフトゾーン(21)の全体がドープされることを特徴とする工程と、
を含む方法であって、
前記ドリフトゾーン(21)の生成は、エピタクチック堆積なしに完全に実行されることを特徴とする方法。 - 前記基板(12)の前記半導体材料は、炭化シリコンであり、厚さが4μmから30μmであることを特徴とする請求項1に記載の方法。
- 前記基板(12)の前記半導体材料は、前記ドリフトゾーン(21)生成前にドープされていないか、または弱くnドープされていることを特徴とする請求項1または2に記載の方法。
- 前記基板(12)の厚さが、4μmから25μm、好ましくは4μmから20μm、より好ましくは4μmから15μm、より好ましくは6μmから14μm、より好ましくは7μmから13μmであることを特徴とする前記請求項のいずれか1項に記載の方法。
- 前記ドリフトゾーン(21)が前記基板(12)の高さの40から100%を超えて、好ましくは50から98%を超えて、より好ましくは60から95%を超えて延びることを特徴とする前記請求項のいずれか1項に記載の方法。
- 前記ドリフトゾーン(21)は、前記イオン注入後にnドープされることを特徴とする前記請求項のいずれか1項に記載の方法。
- 前記ドープされたドリフトゾーン(21)の製造は、前記基板(12)の片側からのイオン注入によって実行されることを特徴とする前記請求項のいずれか1項に記載の方法。
- 前記ドープされたドリフトゾーン(21)の製造は、前記基板(12)の両側からのイオン注入によって実行されることを特徴とする請求項1から6までのいずれか1項に記載の方法。
- 前記基板(12)が前記注入間で180°回転されることを特徴とする請求項8に記載の方法。
- 前記基板(12)の両側からの前記2つのイオン注入によって製造された第1および第2のドーパントプロファイルの各々は、濃度プラトー(P1,P2)からなり、一方の濃度プラトー(P1)は、前記基板(12)の第1のエッジ領域から中央領域に向かって延在し、他方の濃度プラトー(P2)は、前記基板(12)の前記第1のエッジ領域の反対側の第2のエッジ領域から前記中央領域に向かって延在しており、前記第1および第2のドーパントプロファイルの各々は、前記基板(12)の前記中央領域内の下降するドーピングフランク(S1,S2)ならなることを特徴とする請求項9に記載の方法。
- 前記濃度プラトー(P1,P2)の少なくとも一方、好ましくは前記第2のエッジ領域に割り当てられた濃度プラトー(P2)が、前記基板(12)の関連付けられたエッジ領域から前記基板(12)の中央領域に向けて下降していることを特徴とする請求項10に記載の方法。
- 前記2つのドーピングフランク(S1,S2)が前記基板(12)の中央領域において交差し、前記2つのドーパントプロファイルが前記中央領域で重なることを特徴とする請求項8から11までのいずれか1項に記載の方法。
- 前記ドープされたドリフトゾーン(21)を製造することは、ドーピング物質として窒素、リン、または水素のイオンを用いて実行されることを特徴とする前記請求項のいずれか1項に記載の方法。
- ドープされたフィールドストップ層(18)が、エネルギーフィルタ(20)を使用するイオン注入によって前記基板(12)のエッジ領域に生成されることを特徴とする、前記請求項のいずれか1項に記載の方法。
- 前記フィールドストップ層(18)は、イオン注入後にnドープされ、前記フィールドストップ層(18)のドーピングは、前記ドリフトゾーン(21)のドーピングよりも強いことを特徴とする請求項14に記載の方法。
- 前記フィールドストップ層(18)の厚さは、0.5μmから150μm、好ましくは0.8μmから5μmであることを特徴とする請求項14または請求項15に記載の方法。
- 前記フィールドストップ層(18)を生成するための前記イオン注入が、前記フィールドストップ層(18)が形成される前記基板(12)の側面から実行されることを特徴とする、請求項14から16のいずれか1項に記載の方法。
- エネルギーフィルタ(20)を用いたイオン注入を使いることにより、異なるドーピング領域を有する表層機能ゾーン(24)が生成されることを特徴とする、前記請求項のいずれか1項に記載の方法。
- 前記表層機能ゾーン(24)が、前記フィールドストップ層(18)の反対側の前記基板(12)のエッジ領域にあることを特徴とする、請求項14から17のいずれか1項に記載の方法。
- 前記表層機能ゾーン(24)の領域の注入が、前記表層機能層(24)が形成される前記基板(12)の側面から実行されることを特徴とする、請求項18または19に記載の方法。
- 前記表層機能ゾーン(24)の厚さは、0.5μmから6μm、好ましくは0.8μmから5μmであることを特徴とする請求項18から20のいずれか1項に記載の方法。
- さらに、pドープ領域またはピラー(16)が、エネルギーフィルタ(20)を使用するイオン注入によって前記ドリフトゾーン(21)の領域に生成されることを特徴とする、前記請求項のいずれか1項に記載の方法。
- 前記基板(12)の所定の領域が、少なくとも前記表層機能ゾーン(24)および/またはpドープされた領域またはピラー(16)のイオン注入中にマスクされることを特徴とする、請求項18から21または請求項22のいずれか1項に記載の方法。
- 前記基板(12)の提供は、前記半導体材料の棒状の出発結晶(2)を薄いプレートに分割することによって実行されることを特徴とする前記請求項のいずれか1項に記載の方法。
- 4μmから300μm、好ましくは4μmから30μmの厚さを有する半導体材料の基板(12)を含む半導体部品(4)であって、前記基板(12)の前記ドーパントプロファイルは、前記基板(12)の中央領域のくぼみまたは隆起を含むことを特徴とする半導体部品(4)。
- 前記基板(12)のドーパントプロファイルは、前記基板(12)の前記第1のエッジ領域から前記中間領域まで実質的に一定であることを特徴とする請求項25に記載の半導体部品(4)。
- 前記基板(12)のドーパントプロファイルは、前記基板(12)の前記第1のエッジ領域の反対側に位置する前記第2のエッジ領域から前記中間領域まで実質的に一定であることを特徴とする請求項26に記載の半導体部品(4)。
- 前記隆起又はくぼみは、前記基板(12)に形成される前記ドリフトゾーン(21)の中央領域に配置されていることを特徴とする請求項25から27のいずれか1項に記載の半導体部品(4)。
- 前記基板(12)のドーパントプロファイルは、基板(12)の前記第1のエッジ領域の反対側に配置される第2のエッジ領域から前記中央領域に下降することを特徴とする請求項26に記載の半導体部品(4)。
- 前記半導体部品(4)が炭化シリコンであることを特徴とする請求項25から29のいずれか1項に記載の半導体部品(4)。
- 前記半導体部品(4)の所定の領域では、ドープされていない領域(14)は、ドープされた領域の隣、特にドリフトゾーン(21)のドープされた領域の隣に配置されることを特徴とする請求項25から30のいずれか1項に記載の半導体部品(4)。
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