JP7706415B2 - 半導体装置および電力変換装置 - Google Patents

半導体装置および電力変換装置 Download PDF

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Publication number
JP7706415B2
JP7706415B2 JP2022072318A JP2022072318A JP7706415B2 JP 7706415 B2 JP7706415 B2 JP 7706415B2 JP 2022072318 A JP2022072318 A JP 2022072318A JP 2022072318 A JP2022072318 A JP 2022072318A JP 7706415 B2 JP7706415 B2 JP 7706415B2
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Japan
Prior art keywords
region
diode
igbt
type
semiconductor device
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JP2022072318A
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English (en)
Japanese (ja)
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JP2023161772A5 (https=
JP2023161772A (ja
Inventor
健司 原田
真也 曽根田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2022072318A priority Critical patent/JP7706415B2/ja
Priority to US18/177,021 priority patent/US12568638B2/en
Priority to DE102023109805.5A priority patent/DE102023109805A1/de
Priority to CN202310433327.7A priority patent/CN116960121A/zh
Publication of JP2023161772A publication Critical patent/JP2023161772A/ja
Publication of JP2023161772A5 publication Critical patent/JP2023161772A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022072318A 2022-04-26 2022-04-26 半導体装置および電力変換装置 Active JP7706415B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022072318A JP7706415B2 (ja) 2022-04-26 2022-04-26 半導体装置および電力変換装置
US18/177,021 US12568638B2 (en) 2022-04-26 2023-03-01 Semiconductor device and power conversion apparatus
DE102023109805.5A DE102023109805A1 (de) 2022-04-26 2023-04-19 Halbleitervorrichtung und Leistungsumwandlungseinrichtung
CN202310433327.7A CN116960121A (zh) 2022-04-26 2023-04-21 半导体装置及电力变换装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022072318A JP7706415B2 (ja) 2022-04-26 2022-04-26 半導体装置および電力変換装置

Publications (3)

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JP2023161772A JP2023161772A (ja) 2023-11-08
JP2023161772A5 JP2023161772A5 (https=) 2024-05-21
JP7706415B2 true JP7706415B2 (ja) 2025-07-11

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JP2022072318A Active JP7706415B2 (ja) 2022-04-26 2022-04-26 半導体装置および電力変換装置

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US (1) US12568638B2 (https=)
JP (1) JP7706415B2 (https=)
CN (1) CN116960121A (https=)
DE (1) DE102023109805A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117581383A (zh) * 2021-07-20 2024-02-20 株式会社电装 半导体装置
JP2025025459A (ja) * 2023-08-09 2025-02-21 株式会社デンソー 半導体装置
WO2025225319A1 (ja) * 2024-04-23 2025-10-30 株式会社デンソー 半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011134950A (ja) 2009-12-25 2011-07-07 Toyota Motor Corp 半導体装置
JP2014216465A (ja) 2013-04-25 2014-11-17 トヨタ自動車株式会社 半導体装置
US20150091052A1 (en) 2013-09-30 2015-04-02 Infineon Technologies Ag Semiconductor Device and Method for Forming a Semiconductor Device
JP2019068036A (ja) 2017-05-30 2019-04-25 富士電機株式会社 半導体装置
JP2021028930A (ja) 2019-08-09 2021-02-25 富士電機株式会社 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645611A (ja) * 1992-07-24 1994-02-18 Fuji Electric Co Ltd 電力用ｍｏｓ型半導体素子
JP5103830B2 (ja) * 2006-08-28 2012-12-19 三菱電機株式会社 絶縁ゲート型半導体装置
DE112018007723T5 (de) * 2018-06-12 2021-02-25 Mitsubishi Electric Corporation Leistungshalbleitermodul und leistungswandlervorrichtung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011134950A (ja) 2009-12-25 2011-07-07 Toyota Motor Corp 半導体装置
JP2014216465A (ja) 2013-04-25 2014-11-17 トヨタ自動車株式会社 半導体装置
US20150091052A1 (en) 2013-09-30 2015-04-02 Infineon Technologies Ag Semiconductor Device and Method for Forming a Semiconductor Device
JP2019068036A (ja) 2017-05-30 2019-04-25 富士電機株式会社 半導体装置
JP2021028930A (ja) 2019-08-09 2021-02-25 富士電機株式会社 半導体装置

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US20230343862A1 (en) 2023-10-26
US12568638B2 (en) 2026-03-03
CN116960121A (zh) 2023-10-27
JP2023161772A (ja) 2023-11-08
DE102023109805A1 (de) 2023-10-26

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