JP7636087B2 - 基板処理方法 - Google Patents

基板処理方法 Download PDF

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Publication number
JP7636087B2
JP7636087B2 JP2023525756A JP2023525756A JP7636087B2 JP 7636087 B2 JP7636087 B2 JP 7636087B2 JP 2023525756 A JP2023525756 A JP 2023525756A JP 2023525756 A JP2023525756 A JP 2023525756A JP 7636087 B2 JP7636087 B2 JP 7636087B2
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Japan
Prior art keywords
substrate
layer
absorption layer
chips
laser light
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JP2023525756A
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Japanese (ja)
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JPWO2022255189A1 (https=
Inventor
義久 松原
義弘 堤
陽平 山下
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of JPWO2022255189A1 publication Critical patent/JPWO2022255189A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Manufacturing & Machinery (AREA)
JP2023525756A 2021-06-03 2022-05-25 基板処理方法 Active JP7636087B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021093400 2021-06-03
JP2021093400 2021-06-03
PCT/JP2022/021409 WO2022255189A1 (ja) 2021-06-03 2022-05-25 基板処理方法

Publications (2)

Publication Number Publication Date
JPWO2022255189A1 JPWO2022255189A1 (https=) 2022-12-08
JP7636087B2 true JP7636087B2 (ja) 2025-02-26

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Family Applications (1)

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JP2023525756A Active JP7636087B2 (ja) 2021-06-03 2022-05-25 基板処理方法

Country Status (5)

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US (1) US20240250064A1 (https=)
JP (1) JP7636087B2 (https=)
KR (1) KR20240016994A (https=)
CN (1) CN117397001A (https=)
WO (1) WO2022255189A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020111146A1 (ja) 2018-11-29 2020-06-04 日立化成株式会社 半導体装置の製造方法及び仮固定材用積層フィルム
WO2021084902A1 (ja) 2019-10-29 2021-05-06 東京エレクトロン株式会社 チップ付き基板の製造方法、及び基板処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
US7195813B2 (en) * 2004-05-21 2007-03-27 Eastman Kodak Company Mixed absorber layer for displays
JP6149277B2 (ja) * 2011-03-30 2017-06-21 ボンドテック株式会社 電子部品実装方法、電子部品実装システムおよび基板
US20150017434A1 (en) 2012-01-30 2015-01-15 3M Innovative Properties Company Apparatus, hybrid laminated body, method, and materials for temporary substrate support
JP6034625B2 (ja) 2012-09-03 2016-11-30 東京応化工業株式会社 剥離方法
EP4481811A3 (en) * 2016-12-23 2025-02-26 Board Of Regents, The University Of Texas System Heterogeneous integration of components onto compact devices using moiré based metrology and vacuum based pick-and-place
US10217637B1 (en) * 2017-09-20 2019-02-26 International Business Machines Corporation Chip handling and electronic component integration
CN110824599B (zh) * 2018-08-14 2021-09-03 白金科技股份有限公司 一种红外带通滤波器
EP3995518A4 (en) * 2019-07-02 2022-09-07 Asahi Kasei Kabushiki Kaisha MICROWAVE FILM FOR BIOASSAY, LIGHT SENSITIVE RESIN COMPOSITION FOR THE PREPARATION OF MICROWAVE FILM FOR BIOASSAY AND METHOD OF PREPARATION OF MICROWAVE FILM FOR BIOASSAY

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020111146A1 (ja) 2018-11-29 2020-06-04 日立化成株式会社 半導体装置の製造方法及び仮固定材用積層フィルム
WO2021084902A1 (ja) 2019-10-29 2021-05-06 東京エレクトロン株式会社 チップ付き基板の製造方法、及び基板処理装置

Also Published As

Publication number Publication date
CN117397001A (zh) 2024-01-12
JPWO2022255189A1 (https=) 2022-12-08
US20240250064A1 (en) 2024-07-25
KR20240016994A (ko) 2024-02-06
WO2022255189A1 (ja) 2022-12-08

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