JP7628968B2 - 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板 - Google Patents

二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板 Download PDF

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JP7628968B2
JP7628968B2 JP2021573119A JP2021573119A JP7628968B2 JP 7628968 B2 JP7628968 B2 JP 7628968B2 JP 2021573119 A JP2021573119 A JP 2021573119A JP 2021573119 A JP2021573119 A JP 2021573119A JP 7628968 B2 JP7628968 B2 JP 7628968B2
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JPWO2021149598A1 (https=
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守道 渡邊
潔 松島
潤 吉川
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NGK Insulators Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2021573119A 2020-01-24 2021-01-15 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板 Active JP7628968B2 (ja)

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JP2020009649 2020-01-24
JP2020009649 2020-01-24
PCT/JP2021/001148 WO2021149598A1 (ja) 2020-01-24 2021-01-15 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板

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JP7628968B2 true JP7628968B2 (ja) 2025-02-12

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022168372A1 (ja) * 2021-02-05 2022-08-11 日本碍子株式会社 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板
JP7104266B1 (ja) * 2021-10-12 2022-07-20 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣ複合基板
WO2023062850A1 (ja) * 2021-10-12 2023-04-20 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣ複合基板
CN117529584A (zh) * 2021-10-22 2024-02-06 日本碍子株式会社 SiC基板和SiC复合基板
CN120858208A (zh) * 2023-03-28 2025-10-28 日本碍子株式会社 SiC基板及SiC复合基板
WO2024224665A1 (ja) * 2023-04-27 2024-10-31 日本碍子株式会社 ＳｉＣ基板及びＳｉＣ複合基板

Citations (8)

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Publication number Priority date Publication date Assignee Title
JP2004533720A (ja) 2001-05-11 2004-11-04 クリー　インコーポレイテッド 高い降伏電圧を有する半導体デバイスのための高抵抗率炭化珪素基板
JP2004323293A (ja) 2003-04-24 2004-11-18 Toyota Motor Corp ＳｉＣ単結晶の製造方法
JP2005239465A (ja) 2004-02-25 2005-09-08 Matsushita Electric Ind Co Ltd 炭化珪素単結晶製造装置
JP2007277049A (ja) 2006-04-07 2007-10-25 Toyota Motor Corp ＳｉＣ単結晶の製造方法
JP2012046384A (ja) 2010-08-27 2012-03-08 Sumitomo Metal Ind Ltd ＳｉＣ単結晶の製造方法
JP2014031316A (ja) 2013-11-01 2014-02-20 Toyota Motor Corp ｎ型ＳｉＣ単結晶およびその用途
JP2014185048A (ja) 2013-03-22 2014-10-02 Toshiba Corp ＳｉＣエピタキシャルウェハおよび半導体装置
WO2014189008A1 (ja) 2013-05-20 2014-11-27 日立化成株式会社 炭化珪素単結晶及びその製造方法

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JP3043689B2 (ja) * 1997-11-17 2000-05-22 日本ピラー工業株式会社 単結晶ＳｉＣ及びその製造方法
JPH11268995A (ja) * 1998-03-20 1999-10-05 Denso Corp 炭化珪素単結晶の製造方法
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US8900979B2 (en) * 2011-11-23 2014-12-02 University Of South Carolina Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
JP6069758B2 (ja) 2012-08-26 2017-02-01 国立大学法人名古屋大学 ＳｉＣ単結晶の製造方法
EP2889397B1 (en) 2012-08-26 2019-04-03 National University Corporation Nagoya University Sic single crystal producing method
JP6197722B2 (ja) 2014-03-26 2017-09-20 新日鐵住金株式会社 ＳｉＣ板状体における転位の面内分布評価方法
JP6762484B2 (ja) * 2017-01-10 2020-09-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
JP7024622B2 (ja) 2018-06-19 2022-02-24 株式会社デンソー 炭化珪素単結晶およびその製造方法
JP6737378B2 (ja) * 2019-05-09 2020-08-05 信越化学工業株式会社 ＳｉＣ複合基板

Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
JP2004533720A (ja) 2001-05-11 2004-11-04 クリー　インコーポレイテッド 高い降伏電圧を有する半導体デバイスのための高抵抗率炭化珪素基板
JP2004323293A (ja) 2003-04-24 2004-11-18 Toyota Motor Corp ＳｉＣ単結晶の製造方法
JP2005239465A (ja) 2004-02-25 2005-09-08 Matsushita Electric Ind Co Ltd 炭化珪素単結晶製造装置
JP2007277049A (ja) 2006-04-07 2007-10-25 Toyota Motor Corp ＳｉＣ単結晶の製造方法
JP2012046384A (ja) 2010-08-27 2012-03-08 Sumitomo Metal Ind Ltd ＳｉＣ単結晶の製造方法
JP2014185048A (ja) 2013-03-22 2014-10-02 Toshiba Corp ＳｉＣエピタキシャルウェハおよび半導体装置
WO2014189008A1 (ja) 2013-05-20 2014-11-27 日立化成株式会社 炭化珪素単結晶及びその製造方法
JP2014031316A (ja) 2013-11-01 2014-02-20 Toyota Motor Corp ｎ型ＳｉＣ単結晶およびその用途

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CN114761629B (zh) 2024-06-25
US12125883B2 (en) 2024-10-22
CN114761629A (zh) 2022-07-15
US20220278206A1 (en) 2022-09-01
JPWO2021149598A1 (https=) 2021-07-29

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