CN114761629B - 双轴取向SiC复合基板以及半导体器件用复合基板 - Google Patents

双轴取向SiC复合基板以及半导体器件用复合基板 Download PDF

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Publication number
CN114761629B
CN114761629B CN202180006615.3A CN202180006615A CN114761629B CN 114761629 B CN114761629 B CN 114761629B CN 202180006615 A CN202180006615 A CN 202180006615A CN 114761629 B CN114761629 B CN 114761629B
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biaxially oriented
sic layer
oriented sic
layer
composite substrate
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CN114761629A (zh
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渡边守道
松岛洁
吉川润
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CN202180006615.3A 2020-01-24 2021-01-15 双轴取向SiC复合基板以及半导体器件用复合基板 Active CN114761629B (zh)

Applications Claiming Priority (3)

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JP2020-009649 2020-01-24
JP2020009649 2020-01-24
PCT/JP2021/001148 WO2021149598A1 (ja) 2020-01-24 2021-01-15 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板

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CN114761629B true CN114761629B (zh) 2024-06-25

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US (1) US12125883B2 (https=)
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WO (1) WO2021149598A1 (https=)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
WO2022168372A1 (ja) * 2021-02-05 2022-08-11 日本碍子株式会社 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板
JP7104266B1 (ja) * 2021-10-12 2022-07-20 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣ複合基板
WO2023062850A1 (ja) * 2021-10-12 2023-04-20 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣ複合基板
CN117529584A (zh) * 2021-10-22 2024-02-06 日本碍子株式会社 SiC基板和SiC复合基板
CN120858208A (zh) * 2023-03-28 2025-10-28 日本碍子株式会社 SiC基板及SiC复合基板
WO2024224665A1 (ja) * 2023-04-27 2024-10-31 日本碍子株式会社 ＳｉＣ基板及びＳｉＣ複合基板

Citations (2)

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JPH11268995A (ja) * 1998-03-20 1999-10-05 Denso Corp 炭化珪素単結晶の製造方法
JP2004323293A (ja) * 2003-04-24 2004-11-18 Toyota Motor Corp ＳｉＣ単結晶の製造方法

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JP3043689B2 (ja) * 1997-11-17 2000-05-22 日本ピラー工業株式会社 単結晶ＳｉＣ及びその製造方法
US6507046B2 (en) 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
JP2005239465A (ja) * 2004-02-25 2005-09-08 Matsushita Electric Ind Co Ltd 炭化珪素単結晶製造装置
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
JP4179331B2 (ja) 2006-04-07 2008-11-12 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP5318047B2 (ja) 2010-08-27 2013-10-16 新日鐵住金株式会社 ＳｉＣ単結晶の製造方法
US8900979B2 (en) * 2011-11-23 2014-12-02 University Of South Carolina Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
JP6069758B2 (ja) 2012-08-26 2017-02-01 国立大学法人名古屋大学 ＳｉＣ単結晶の製造方法
EP2889397B1 (en) 2012-08-26 2019-04-03 National University Corporation Nagoya University Sic single crystal producing method
JP6419414B2 (ja) 2013-03-22 2018-11-07 株式会社東芝 ＳｉＣエピタキシャルウェハおよび半導体装置
JP6238249B2 (ja) * 2013-05-20 2017-11-29 国立研究開発法人産業技術総合研究所 炭化珪素単結晶及びその製造方法
JP5794276B2 (ja) 2013-11-01 2015-10-14 トヨタ自動車株式会社 ｎ型ＳｉＣ単結晶およびその用途
JP6197722B2 (ja) 2014-03-26 2017-09-20 新日鐵住金株式会社 ＳｉＣ板状体における転位の面内分布評価方法
JP6762484B2 (ja) * 2017-01-10 2020-09-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
JP7024622B2 (ja) 2018-06-19 2022-02-24 株式会社デンソー 炭化珪素単結晶およびその製造方法
JP6737378B2 (ja) * 2019-05-09 2020-08-05 信越化学工業株式会社 ＳｉＣ複合基板

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JP2004323293A (ja) * 2003-04-24 2004-11-18 Toyota Motor Corp ＳｉＣ単結晶の製造方法

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JP7628968B2 (ja) 2025-02-12
WO2021149598A1 (ja) 2021-07-29
US12125883B2 (en) 2024-10-22
CN114761629A (zh) 2022-07-15
US20220278206A1 (en) 2022-09-01
JPWO2021149598A1 (https=) 2021-07-29

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