JP7611816B2 - 窒化ケイ素焼結体の製造方法 - Google Patents

窒化ケイ素焼結体の製造方法 Download PDF

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JP7611816B2
JP7611816B2 JP2021511943A JP2021511943A JP7611816B2 JP 7611816 B2 JP7611816 B2 JP 7611816B2 JP 2021511943 A JP2021511943 A JP 2021511943A JP 2021511943 A JP2021511943 A JP 2021511943A JP 7611816 B2 JP7611816 B2 JP 7611816B2
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silicon nitride
sintered body
nitride sintered
thermal conductivity
raw material
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JPWO2020203683A1 (https=
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翔二 岩切
真 武田
真一 高田
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Denka Co Ltd
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Denka Co Ltd
Denki Kagaku Kogyo KK
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JP2021511943A 2019-03-29 2020-03-26 窒化ケイ素焼結体の製造方法 Active JP7611816B2 (ja)

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JP2019066154 2019-03-29
JP2019066154 2019-03-29
PCT/JP2020/013787 WO2020203683A1 (ja) 2019-03-29 2020-03-26 窒化ケイ素焼結体及びその製造方法、並びに積層体及びパワーモジュール

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JPWO2020203683A1 JPWO2020203683A1 (https=) 2020-10-08
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