JP7577671B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP7577671B2
JP7577671B2 JP2021546060A JP2021546060A JP7577671B2 JP 7577671 B2 JP7577671 B2 JP 7577671B2 JP 2021546060 A JP2021546060 A JP 2021546060A JP 2021546060 A JP2021546060 A JP 2021546060A JP 7577671 B2 JP7577671 B2 JP 7577671B2
Authority
JP
Japan
Prior art keywords
oxide
insulator
conductor
transistor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021546060A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021053453A1 (https=
JPWO2021053453A5 (https=
Inventor
健 青木
宗広 上妻
雅史 藤田
貴彦 石津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2021053453A1 publication Critical patent/JPWO2021053453A1/ja
Publication of JPWO2021053453A5 publication Critical patent/JPWO2021053453A5/ja
Application granted granted Critical
Publication of JP7577671B2 publication Critical patent/JP7577671B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Neurology (AREA)
  • Biomedical Technology (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Memory System (AREA)
JP2021546060A 2019-09-20 2020-09-08 半導体装置 Active JP7577671B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019172147 2019-09-20
JP2019172147 2019-09-20
PCT/IB2020/058318 WO2021053453A1 (ja) 2019-09-20 2020-09-08 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2021053453A1 JPWO2021053453A1 (https=) 2021-03-25
JPWO2021053453A5 JPWO2021053453A5 (https=) 2023-08-30
JP7577671B2 true JP7577671B2 (ja) 2024-11-05

Family

ID=74883969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021546060A Active JP7577671B2 (ja) 2019-09-20 2020-09-08 半導体装置

Country Status (4)

Country Link
US (1) US12002535B2 (https=)
JP (1) JP7577671B2 (https=)
DE (1) DE112020004469T5 (https=)
WO (1) WO2021053453A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020157553A1 (ja) * 2019-01-29 2020-08-06 株式会社半導体エネルギー研究所 記憶装置
JP7581209B2 (ja) 2019-08-08 2024-11-12 株式会社半導体エネルギー研究所 半導体装置
KR20220120598A (ko) 2019-12-27 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN115362551A (zh) * 2020-04-03 2022-11-18 株式会社半导体能源研究所 半导体装置
WO2021209855A1 (ja) 2020-04-17 2021-10-21 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
CN114792688A (zh) * 2021-01-26 2022-07-26 上峰科技股份有限公司 电子系统、与宽带隙半导体器件集成的可编程电阻存储器及其操作方法
US11974422B2 (en) * 2021-11-04 2024-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
WO2025046433A1 (ja) * 2023-08-31 2025-03-06 株式会社半導体エネルギー研究所 半導体装置
WO2025153929A1 (ja) * 2024-01-17 2025-07-24 株式会社半導体エネルギー研究所 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019057053A (ja) 2017-09-20 2019-04-11 東芝メモリ株式会社 半導体記憶装置

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3260357B2 (ja) 1990-01-24 2002-02-25 株式会社日立製作所 情報処理装置
JP3601883B2 (ja) 1994-11-22 2004-12-15 株式会社ルネサステクノロジ 半導体装置
TW330265B (en) 1994-11-22 1998-04-21 Hitachi Ltd Semiconductor apparatus
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6001900B2 (ja) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 信号処理回路
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP2013130802A (ja) 2011-12-22 2013-07-04 Semiconductor Energy Lab Co Ltd 半導体装置、画像表示装置、記憶装置、及び電子機器
JP6027898B2 (ja) 2012-01-23 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
US9372694B2 (en) 2012-03-29 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Reducing data backup and recovery periods in processors
WO2013146154A1 (en) 2012-03-29 2013-10-03 Semiconductor Energy Laboratory Co., Ltd. Power supply control device
KR102107591B1 (ko) 2012-07-18 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 소자 및 프로그래머블 로직 디바이스
JP2014112213A (ja) 2012-10-30 2014-06-19 Semiconductor Energy Lab Co Ltd 表示装置の駆動方法
US9437273B2 (en) 2012-12-26 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9786350B2 (en) 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8994430B2 (en) 2013-05-17 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9172369B2 (en) 2013-05-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9406348B2 (en) 2013-12-26 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory cell including transistor and capacitor
JP6442321B2 (ja) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器
JP6580863B2 (ja) 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
US10236884B2 (en) 2015-02-09 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Word line driver comprising NAND circuit
KR20170122771A (ko) * 2015-02-26 2017-11-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 시스템 및 정보 처리 시스템
US10490142B2 (en) 2016-01-29 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
US10685614B2 (en) 2016-03-17 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
US10242728B2 (en) * 2016-10-27 2019-03-26 Samsung Electronics Co., Ltd. DPU architecture
WO2018211349A1 (ja) 2017-05-19 2018-11-22 株式会社半導体エネルギー研究所 半導体装置
US11302726B2 (en) 2017-07-14 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
JP7004453B2 (ja) 2017-08-11 2022-01-21 株式会社半導体エネルギー研究所 グラフィックスプロセッシングユニット
JP7265479B2 (ja) 2017-08-25 2023-04-26 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP2019046199A (ja) 2017-09-01 2019-03-22 株式会社半導体エネルギー研究所 プロセッサ、および電子機器
JP2019047006A (ja) 2017-09-05 2019-03-22 株式会社半導体エネルギー研究所 半導体装置、電子機器
US11139298B2 (en) 2017-09-06 2021-10-05 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP2019056955A (ja) * 2017-09-19 2019-04-11 東芝メモリ株式会社 メモリシステム
US10796221B2 (en) 2017-10-19 2020-10-06 General Electric Company Deep learning architecture for automated image feature extraction
US11322199B1 (en) * 2020-10-09 2022-05-03 Qualcomm Incorporated Compute-in-memory (CIM) cell circuits employing capacitive storage circuits for reduced area and CIM bit cell array circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019057053A (ja) 2017-09-20 2019-04-11 東芝メモリ株式会社 半導体記憶装置

Also Published As

Publication number Publication date
DE112020004469T5 (de) 2022-08-04
JPWO2021053453A1 (https=) 2021-03-25
WO2021053453A1 (ja) 2021-03-25
US12002535B2 (en) 2024-06-04
US20220343954A1 (en) 2022-10-27

Similar Documents

Publication Publication Date Title
JP7577671B2 (ja) 半導体装置
JP7208891B2 (ja) 半導体装置の作製方法
JP7167038B2 (ja) 半導体装置
JP7246376B2 (ja) 記憶装置、および電子機器
JP7711271B2 (ja) 記憶装置
CN110313070A (zh) 半导体装置以及其制造方法
CN110506328A (zh) 半导体装置及半导体装置的制造方法
WO2019048984A1 (ja) 半導体装置、および半導体装置の作製方法
JP7560469B2 (ja) 半導体装置
CN110709998A (zh) 半导体装置以及其制造方法
CN110678989A (zh) 半导体装置及半导体装置的制造方法
JP7618404B2 (ja) 記憶装置
JP2018181890A (ja) 半導体装置
JP2018201011A (ja) 半導体装置、および半導体装置の作製方法
US12014175B2 (en) Data processing system and operation method of data processing system
JP2025120272A (ja) 半導体装置
WO2018215878A1 (ja) 半導体装置、および半導体装置の作製方法
JP7467430B2 (ja) 記憶装置
JP2026012366A (ja) 記憶装置
CN110462803B (zh) 半导体装置及半导体装置的制造方法
JP7577661B2 (ja) 情報処理システム、及びその動作方法
JP2018152399A (ja) 半導体装置、および半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230822

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230822

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240723

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240918

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20241001

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20241023

R150 Certificate of patent or registration of utility model

Ref document number: 7577671

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150