JP7550211B2 - 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用 - Google Patents

洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用 Download PDF

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Publication number
JP7550211B2
JP7550211B2 JP2022500551A JP2022500551A JP7550211B2 JP 7550211 B2 JP7550211 B2 JP 7550211B2 JP 2022500551 A JP2022500551 A JP 2022500551A JP 2022500551 A JP2022500551 A JP 2022500551A JP 7550211 B2 JP7550211 B2 JP 7550211B2
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Japan
Prior art keywords
approximately
acetic acid
weight
cleaning agent
wafer
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JP2022500551A
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Japanese (ja)
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JP2022540086A (ja
JP2022540086A5 (cg-RX-API-DMAC7.html
Inventor
ラーマン・エム・ダリル
ミューレン・セイレム・ケイ
チョ・ジュンヨン
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Merck Patent GmbH
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Merck Patent GmbH
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Priority to JP2024079169A priority Critical patent/JP7792461B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
JP2022500551A 2019-07-08 2020-07-06 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用 Active JP7550211B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024079169A JP7792461B2 (ja) 2019-07-08 2024-05-15 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962871346P 2019-07-08 2019-07-08
US62/871,346 2019-07-08
PCT/EP2020/068936 WO2021004985A1 (en) 2019-07-08 2020-07-06 Rinse and method of use thereof for removing edge protection layers and residual metal hardmask components

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024079169A Division JP7792461B2 (ja) 2019-07-08 2024-05-15 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用

Publications (3)

Publication Number Publication Date
JP2022540086A JP2022540086A (ja) 2022-09-14
JP2022540086A5 JP2022540086A5 (cg-RX-API-DMAC7.html) 2023-03-27
JP7550211B2 true JP7550211B2 (ja) 2024-09-12

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JP2022500551A Active JP7550211B2 (ja) 2019-07-08 2020-07-06 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用
JP2024079169A Active JP7792461B2 (ja) 2019-07-08 2024-05-15 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用

Family Applications After (1)

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JP2024079169A Active JP7792461B2 (ja) 2019-07-08 2024-05-15 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用

Country Status (6)

Country Link
US (1) US12099305B2 (cg-RX-API-DMAC7.html)
EP (1) EP3997520B1 (cg-RX-API-DMAC7.html)
JP (2) JP7550211B2 (cg-RX-API-DMAC7.html)
KR (1) KR102626153B1 (cg-RX-API-DMAC7.html)
CN (1) CN114080570B (cg-RX-API-DMAC7.html)
WO (1) WO2021004985A1 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240385522A1 (en) * 2023-05-15 2024-11-21 Samsung Sdi Co., Ltd. Composition for removing edge beads from metal containing resists, and method of forming patterns including step of removing edge beads utilizing the composition, and a system of forming patterns

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007097233A1 (ja) 2006-02-23 2007-08-30 Tokyo Ohka Kogyo Co., Ltd. リソグラフィー用洗浄液及びこれを用いた洗浄方法
JP2010515246A (ja) 2006-12-21 2010-05-06 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残留物を除去するための液体洗浄剤
US20180046086A1 (en) 2016-08-12 2018-02-15 Inpria Corporation Methods of reducing metal residue in edge bead region from metal-containing resists
WO2018167112A1 (en) 2017-03-16 2018-09-20 Merck Patent Gmbh Lithographic compositions and methods of use thereof

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US6261735B1 (en) * 1998-11-24 2001-07-17 Silicon Valley Chemlabs, Inc. Composition and method for removing probing ink and negative photoresist from silicon wafers enclosures
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JP4042142B2 (ja) 2000-09-08 2008-02-06 Ｊｓｒ株式会社 Ｅｌ表示素子の隔壁形成用感放射線性樹脂組成物、隔壁およびｅｌ表示素子
US6566315B2 (en) * 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
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KR20100082012A (ko) * 2007-11-16 2010-07-15 이케이씨 테크놀로지, 인코포레이티드 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물
JP5639755B2 (ja) * 2008-11-27 2014-12-10 富士フイルム株式会社 有機溶剤を含有する現像液を用いたパターン形成方法及びこれに用いるリンス液
SG10201405263XA (en) * 2009-09-02 2014-11-27 Wako Pure Chem Ind Ltd Resist remover composition and method for removing resist using the composition
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Publication number Priority date Publication date Assignee Title
WO2007097233A1 (ja) 2006-02-23 2007-08-30 Tokyo Ohka Kogyo Co., Ltd. リソグラフィー用洗浄液及びこれを用いた洗浄方法
JP2010515246A (ja) 2006-12-21 2010-05-06 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残留物を除去するための液体洗浄剤
US20180046086A1 (en) 2016-08-12 2018-02-15 Inpria Corporation Methods of reducing metal residue in edge bead region from metal-containing resists
WO2018167112A1 (en) 2017-03-16 2018-09-20 Merck Patent Gmbh Lithographic compositions and methods of use thereof

Also Published As

Publication number Publication date
EP3997520B1 (en) 2023-12-20
CN114080570B (zh) 2025-02-28
KR102626153B1 (ko) 2024-01-16
US12099305B2 (en) 2024-09-24
WO2021004985A1 (en) 2021-01-14
JP2022540086A (ja) 2022-09-14
EP3997520A1 (en) 2022-05-18
JP7792461B2 (ja) 2025-12-25
KR20220032581A (ko) 2022-03-15
TW202111105A (zh) 2021-03-16
US20220308455A1 (en) 2022-09-29
JP2024105549A (ja) 2024-08-06
CN114080570A (zh) 2022-02-22

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