TWI229786B - Thinner composition for rinsing photoresist - Google Patents
Thinner composition for rinsing photoresist Download PDFInfo
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- TWI229786B TWI229786B TW091101470A TW91101470A TWI229786B TW I229786 B TWI229786 B TW I229786B TW 091101470 A TW091101470 A TW 091101470A TW 91101470 A TW91101470 A TW 91101470A TW I229786 B TWI229786 B TW I229786B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
1229786 案號 91101470___£ 修正 五、發明說明（1) <發明所屬之技術範圍> 本發明係有關於液晶顯示器或電漿顯示器等之電子素 子以及電子零件的製造工程中，於感光性樹脂層的圖案形 狀進行曝光處理之前去除感光性樹脂所使用的稀釋劑，特 別是有關於選擇由二曱戊二酸酯（dimethylglutarate)、 二曱琥珀酸酯（dime thy lsuccinate)、二曱己二酸酯 (cHmethyladipate)、或這些組合群所構成之二鹽基性酯 (dibasic ester, DBE)而能發揮優異的溶解性、低毒性、 適當的揮發性等優異效果之稀釋劑。1229786 Case No. 91101470 ___ £ Amendment V. Description of the invention (1) < Technical scope of invention > The present invention relates to the manufacturing process of electronic elements and electronic parts for liquid crystal displays or plasma displays, etc., in the photosensitive resin layer The thinner used to remove the photosensitive resin before the pattern shape is exposed. In particular, it is related to the selection of dimethylglutarate, dime thy lsuccinate, and diadipate. (cHmethyladipate) or a dibasic ester (DBE) composed of these combination groups, and a diluent which can exhibit excellent effects such as excellent solubility, low toxicity, and appropriate volatility.
<從來的技術> • 一般的半導體積體電路或平板型顯示器（Flat Panel Display，FPD)電路，係由極微細的構造所構成，經由多 階段的工程而製造完成。其中，光電石印圖案技術 (ph〇to-lithography patterning techn〇l〇gy)於製造液 晶顯示器、電漿顯示器等之各種電子素子或電子零件中最 的：法。這方法係首先將正或負型感光樹脂層均句 :塗：在”之表面上，經過曝光/顯像以形成所要的圖 木。在上述变佈感光性樹脂的禍< Previous technology > • A general semiconductor integrated circuit or a flat panel display (FPD) circuit is composed of a very fine structure and is manufactured through multi-stage engineering. Among them, photolithography patterning technology (ph〇to-lithography patterning technology) is the most suitable method for manufacturing various electronic elements or electronic parts such as liquid crystal displays and plasma displays. This method is to first apply the positive or negative photosensitive resin layer: coating: on the "surface", after exposure / development to form the desired pattern.
了會被塗在形成所要的圖荦領戈：’：二感光性樹脂除 緣部和後面部份而形成二擴散到基板的邊 樹脂層會使微細構造電路於狀^〜留下來的感光性 Uef。㈣）、散亂等的原因'曝像之過程中成為散焦 同時降低最終製品的品質。使1個工程的良品率下降，It will be applied to form the desired pattern: ': two photosensitive resins will be removed from the edge and the rear part to form two resin layers that diffuse to the substrate, which will make the fine structure circuit ^ ~ the remaining photosensitive Uef. (Ii) Causes such as scatter, etc. 'During the exposure process, it becomes defocused and reduces the quality of the final product. Reduce the yield of one project,
第6頁 五、發明說明（2) 為了去除如上述的殘留感光性樹脂層，雖然裝置了去 除裝置（Edge Bead Remover, EBR)以去除在感光性樹脂塗 佈工程後之基板的邊緣部位與後面部位之感光性樹脂。係 從上述裝置之噴嘴把洗淨用稀釋劑（thinner)噴出n盼。 上述的殘留感光性樹脂。 ' $ 決定這種洗淨用稀釋劑的要素為溶解速度、揮發性、 求占^ 感光膜去除介面之直線性（linearity)等。目寸正5. Description of the invention on page 6 (2) In order to remove the residual photosensitive resin layer as described above, although a removal device (Edge Bead Remover, EBR) is installed to remove the edge portion and the back of the substrate after the photosensitive resin coating process Partial photosensitive resin. The thinner for washing is sprayed from the nozzle of the above device. The above-mentioned residual photosensitive resin. '$ The factors that determine this type of thinner for washing are the dissolution rate, volatility, and linearity of the removal interface of the photosensitive film. Mesh
急需要進行開發的為改善如上述的決定性能喜I π I之有效方 法0 揮發性： 所謂揮發性為指去除感光性樹脂後，稀釋劑合夕 揮發掉，不會殘留在基板的表面上。若揮發性太^日^快的 釋劑則未揮發而殘留在基板上，不僅會在感光膜去=丄稀 誘導出撕裂（tearing)現象以外，還會有在後續工* ;丨面 生妨害粒子之作用，使得降低製造工程的生產性這^中發 虞。另-方面，若揮發性過高時，則基板會急速^題之 却，而會產生在塗佈之感光性樹脂形成浮渣（scum) =冷 和，感光膜去除裝置EBR之喷嘴將稀釋劑喷射出時，\象 將感光性樹脂完全加予溶解/去除而揮發掉的問題。热法 至’會有可能在使用過程中，揮發在大氣中引起 污染、爆發等危險的問題。 β /尹至的 粘度： 祷釋劑的粘度係使用感光膜去除裝置之喷嘴一 稀釋劑時應加予考慮的要素，若粘度過高則 :噴射 I貝射的壓An effective method to improve the performance of the above-mentioned determination of I π I is urgently needed to develop. 0 Volatility: The so-called volatility means that after the photosensitive resin is removed, the diluent is volatilized and does not remain on the surface of the substrate. If the volatility is too fast, the fast release agent will not volatilize and remain on the substrate, which will not only induce tearing in the photosensitive film, but also in subsequent processes *; Hindering the role of particles makes it possible to reduce the productivity of manufacturing processes. On the other hand, if the volatility is too high, the substrate will be slammed, and scum will be formed on the coated photosensitive resin = cold, and the thinner of the EBR nozzle of the photosensitive film removal device will dilute the thinner. When sprayed, the problem is that the photosensitive resin is completely dissolved / removed and volatilized. Thermal method to ’may cause volatilization in the atmosphere during use and cause dangerous problems such as pollution and explosion. β / Yin Zhi's viscosity: The viscosity of the prayer release agent is a factor that should be considered when using the thinner of the photosensitive film removal device. If the viscosity is too high:
第7頁 1229786 j 號 911ΓΜΛ7η 五、發明說明（3) 月 修正 :會：！極高之虞，所以’稀釋劑的使用量 所以Page 7 1229786 j No. 911ΓΜΛ7η V. Description of the invention (3) Month Correction: Will :! Very high, so the amount of thinner used
It;;:::低。相反的，若稀釋劑的-度若“ 马感先性树脂不會集中在感光膜去除介面上 會有誘發不良之虞。 直線性：_ 感光膜去除介面之直線性係和上述的溶解速度、揮發 =以，粘度有關連之要素，若溶解速度、揮發性及粘度未 能適當的調和時即無法得到漂亮的界面直線性。因此，直 線性可以說明判斷感光性樹脂洗淨用稀釋劑的性能之 重要的要素。 其次’對從來的感光性樹脂洗淨用稀釋劑來加予考 察。從來的單一稀釋劑係使用如丙二醇醚、丙二醇醚乙酸 的醚類；醚乙酸類；如丙酮、曱基乙酮、曱基異丁酮、2_ 庚酮、環己酮的酮類；以及如乳酸曱酯、乳酸乙酯、乙酸 曱_、乙酸乙酯、乙酸丁酯的酯類之稀釋劑組合物（日本 國專利開1 9 8 8 - 6 9 5 6 3號公告）或，使用烧乙醇丙酸的稀釋 劑組合物（日本國專利開丨992-4252 3號公告）等。但是，這 種從來之單一稀釋劑組合物之中，η -乙酸丁酯（η - b u t y 1 acetate，n-BA)雖然有優異的溶解速度，但其揮發性卻為 太高，丙二醇單曱醚乙酸酯（propyleneglycol monomethylet her acetate，PGMEA)及乳酸乙酉旨（ethyl lactate，EL)則其溶解速度太慢，所以，其缺點為無法發 揮所要之去除性能，因此，單獨加予使用則很不適宜。至 於乙二醇單乙鱗乙酸1旨（ethyleneglycol monoethyletherIt ;; ::: low. Conversely, if the -degree of the diluent is "the horse-sensing precursor resin will not be concentrated on the photosensitive film removal interface, it may cause failure. Linearity: _ The linearity of the photosensitive film removal interface and the above-mentioned dissolution rate, Volatility = The factors related to viscosity. If the dissolution rate, volatility, and viscosity are not properly adjusted, the beautiful interface linearity cannot be obtained. Therefore, the linearity can explain the performance of the thinner for cleaning photosensitive resins. Important factors. Secondly, the diluent for cleaning of photosensitive resin is added. The single diluent used is ethers such as propylene glycol ether, propylene glycol ether acetic acid; ether acetic acid; such as acetone, fluorenyl Ketones of ethyl ketone, fluorenyl isobutanone, 2-heptanone, and cyclohexanone; and diluent compositions such as esters of ethyl lactate, ethyl lactate, ethyl acetate, ethyl acetate, and butyl acetate ( Japanese Patent Publication No. 1 9 8 8-6 9 5 6 3) or a diluent composition using burned ethanol propionic acid (Japanese Patent Publication No. 992-4252 3), etc. However, this has never been Single diluent Among the compounds, although η-buty acetate (n-BA) has an excellent dissolution rate, its volatility is too high. Propyleneglycol monomethylet her acetate, PGMEA) and ethyl lactate (EL) are too slow to dissolve, so the disadvantage is that they cannot exhibit the desired removal performance. Therefore, it is not suitable to use it alone. As for ethylene glycol monoethylstilacetic acid 1 purpose (ethyleneglycol monoethylether
第8頁 五、發明說明（4) acetate, ECA)雖然具有優異的溶解速度，但卻具有誘發 不紅等毒性之疑慮’所以’成為禁止使用。 、為了補救如上述之單一組合物的缺點，雖然開發了混 合各劑，例如.，由丙二醇烷醚和3 —烷氧丙酸烷基類 (^lkoxy pr〇pi〇nic acid)來構成的組 專利開1 9 95—1 46562號公告），由丙二醇院醚，乙酸丁2 礼i乙知所構成的稀釋劑組合物（曰本國專利開 1 995- 1 28867號公告），由丙二醇烷醚乙酸和丙二醇烷 成的稀釋劑組合物之混合稀釋劑組 構 4，T，49。號公告）。但*，上述的組合物專矛弟 了會給與作業者不適感和拒否感的同日夺，因有毒二除 會有妨害健康之虞。還有，從來人— 斤以 發性、有毒性、介面之直線性、洗;： = 揮 題，：以’開發新的稀釋劑即成為急 問 〈本發明想要解決的課題〉 請的要求。 4 i i 為了解決如上述的從來之問題點而進行η a 元成的稀釋劑，其目的係提供： 進仃開發 (1)感光，樹脂之洗淨時的優異之溶解性。 (2 )低的瘵氣壓、低毒性、不會污染清 的危險性’沒有妨害作業者健康之虞。 及热爆發 用量可降低喷嘴的喷射壓，所以，可減少使 (4 )使用去除感光膜裝置之喷嘴進行 ^ 感光性樹脂介面的漂亮之直線性。 、寺，可侍到 1229786 安__Μ. 五、發明說明（5) 91101470 年月曰 修正Page 8 V. Description of the invention (4) Acetate (ECA) has an excellent dissolution rate, but it has the concern of inducing toxicity such as redness, so it is prohibited. In order to remedy the shortcomings of the single composition as described above, although mixed agents have been developed, for example, a group consisting of propylene glycol alkyl ether and 3-alkoxypropionic acid Patent Publication No. 19 95-1 46562), a diluent composition composed of propylene glycol ether, butyl acetate and ethyl acetate (known as National Patent Publication No. 1 995-1 28867), propylene glycol alkyl ether acetic acid Mixed diluent composition of diluent composition with propylene glycol alkane 4,4,49. Announcement). But *, the above-mentioned composition is especially good at giving the operator the discomfort and rejection of the same day, because it may cause harm to health due to poisonous second elimination. Also, I have never been afraid of toxic, toxic, straight-line interface, washing; = = question, "The development of a new diluent becomes an urgent question <question to be solved by the present invention> Please request . 4 i i In order to solve the above-mentioned problems, the diluent of η a element is designed to provide: (1) Photosensitivity, excellent solubility when washing the resin. (2) Low radon pressure, low toxicity, and no danger of contamination 'do not harm the health of the operator. And the amount of thermal explosion can reduce the spray pressure of the nozzle, so it can reduce (4) the use of the nozzle of the photosensitive film removal device to perform ^ the beautiful linearity of the photosensitive resin interface. , Temple, can be served 1229786 An__Μ. V. Description of the invention (5) 91101470
<解決課題的手段> 為達成上述目的，本發明的感光性樹脂洗、m 係選擇由二甲戊二酸酯（d i m e t h y 1 g 1 u t a r a t e)、_ 釋劑 酸S旨（dimethylsuccinate)、二曱己二酸g旨 甲號珀 (dimethyladipate)、或這些組合群所構成之二_ (dibasic ester，DBE)之感光性樹脂洗淨用稀釋^基性醋 <本發明的實施形態> ^ ° 以下，將詳細說明本發明。 二鹽基性崎 〇 本發明的感光性樹脂洗淨用稀釋劑、 (dibasic ester， DBE)有如下列的一般式 〔化學式1〕 於 二曱琥 於 係、由二 量％， 由 脂具有 5 g / k g 環境為 揮發性 56。。， 又 CH3C〇2· ( C Η 2 ) n C 0 ^ 。 上述化學式1，η~2時為二曱戊二酸酯，玎 珀酸酯，η = 4時為二曱己二酸酯。 η〜3時為 好的一實施例，本發明的感光性樹脂洗 曱戊二酸酯57〜63重量％，二曱琥珀醆酽1稀釋劑 二曱己二酸酯12〜20重量％來構成。 〜27重 這種組合的二鹽基性酯來形成之稀釋 優異的溶解性，適當的枯度。又，LD50(經口 樹 ，所以毒性和味道之不快感幾乎都沒有，因此，對 很親和。所以，露出在空氣中它的安定性亦甚高， 很為適當。其物理性為沸點為21〇 t，著火點為 粘度為3.2cps，蒸氣壓（於20。c)為0.lmmHg。 ，好的其他之貫施例為，本發明的稀釋劑係對由上< Means for solving the problem > In order to achieve the above object, the photosensitive resin washing and m-series of the present invention are selected from the group consisting of dimethy 1 g utarate, dimethylsuccinate, and曱 Adipic acid g, dimethyladipate, or two of these combination groups (dibasic ester (DBE)), used for washing photosensitive resin for dilution ^ basic vinegar < embodiment of the present invention > ^ ° Hereinafter, the present invention will be described in detail. The dibasic base is a diluent for washing the photosensitive resin of the present invention. (Dibasic ester (DBE) has the following general formula [Chemical Formula 1].) / kg environment is volatile56. . , And CH3C02 · (CΗ2) nC0 ^. In the above chemical formula 1, when η ~ 2, it is a difluorene glutarate, when it is a perylene ester, and when η = 4, it is a difluorene adipate. η ~ 3 is a good example. The photosensitive resin of the present invention is washed with 57-63% by weight of glutarate, and di-succinic acid, 1 diluent, and 12-20% by weight of adipate. . ~ 27 weights This combination of dibasic esters is used to form a diluent. Excellent solubility, suitable bleach. In addition, LD50 (oral tree, so there is almost no toxicity and taste unpleasant, so it is very compatible. Therefore, its stability when exposed to the air is also very high, very suitable. Its physical property is a boiling point of 21 〇t, the ignition point is 3.2 cps, and the vapor pressure (at 20. c) is 0.1 mmHg. A good other embodiment is that the diluent of the present invention is the same as above.
第10頁 1229786 案號 91101470 年 月 曰 修正 五、發明說明（6) 述之二鹽基性S旨來構成的稀釋劑混合一種以上之共溶劑i 〇 〜9 0重量％來構成’最佳的實施例即為混合丨〇〜5 〇重量％ 之共溶劑。 上述的共溶劑則為選擇自如乙二醇單甲醚乙酸酯 (ethyleneglycol mono methyl ether acetate, EGMEA) 的乙二醇單烧醚乙酸酯類；如丙二醇單曱醚、丙二醇單乙 醚、丙二醇單丁醚的丙二醇單烷醚類；如丙二醇單曱醚乙 酸酯、丙二醇單乙醚乙酸酯、丙二醇單丁醚乙酸酯的丙二 醇單烧醚乙酸S旨類；如乙基乙氧丙酸酯、甲基乙氧丙酸 酯、丁基乙氧丙酸酯的單氧香旱芹酮酸酯類·，如n—乙酸丁 酯、乙酸曱酯、乙酸乙酯、乳酸曱酯、乳酸乙酯、乳酸丁 酉旨的烧酉旨類；如2-庚酮、甲基異丁酮、甲基乙酮、環己嗣 的酮類，或這些組合群所構成的則較為適當。 、 本發明之上述混合共溶劑之中，該丙二醇單甲鱗對於 感光性樹脂之酚樹脂和光活性物質具有優異的溶解性，'主 性數值LD50(經口）為5g/kg，當/及進人體後，會馬上八: 為丙—S予和酒精’所以毒性會變少，所以，對彳七聲 1下菜者亦报 安全。但是，因使用高蒸氣壓時，其揮發性會後高， 、 假如長時間的使用時，則會因惡臭使作業者產生不舒=以 感，還有，其粘度頗高，因此要單獨的加予使用即有難 處。其物理的性質為沸點1 2 1 °C，著火點為3 2。(：，杜☆ (25°C)為 1.96cps，蒸氣壓（25°C)為 12·6 mmHg。 其他之選擇的被使用之上述共溶劑之中，己二醇單 醚乙酸酯（沸點為1 4 4。〇，蒸氣壓為2 · 0 m m H g)，内二醇單甲 1229786 ----室號91101470_年月日 修正 五'發明說明（7) _丙酸醋（沸點為161。(：，蒸氣壓為〇.9mmHg)，卜乙酸丁醋 (彿點為126°C，蒸氣壓為12mmIIg)，丙二醇單曱醚乙酸醋 (>弗點為146°C，蒸氣壓為3.8mmHg)，曱基乙氧丙酸_ (溥 點為142。〇，乙酸曱酯（沸點為17〇°C ，蒸氣壓為^麗^) 其揮發性因為較高，可以當做補助溶劑，以一定的比率來 加以組合當做為稀釋劑之補助成份來使用。含有這物質之 稀釋劑’對於感光性樹脂可維持高的溶解性能，適當之 毛f •生以及粘度，對感光性樹脂去除介面之直線性可發 的優異之特性。 還有’選擇的使用於本發 基性酯及上述共溶劑以外，當 明不會貫質的產生不良影響之 劑。 明的稀釋劑，除了上述二鹽 然，尚可以使用添加對本^ 被限制的量之其他的有機溶 如 的溶解 漂亮的 要的部 因此， 到邊緣 大，感 導體素 下 淨用稀 〔實施 性，適 直、線十生 份，以 使用本 突珠漂 光性樹 子以及 面舉實 釋劑組 例1〕 關本發明的稀 當的揮發性、 ，所以，能在 非常有效率的 發明的感光性 洗（Edge Bead 脂之處理斷面 平版印刷的工 施例來加予說 合物更加為明 感光性樹脂洗 釋劑， 低毒性 短時間 加予去 樹脂洗 Rinse 的改善 程之生 明，使 確的得 淨用稀 囚對歇尤性樹脂有優異 以及，對一介面可得到 内，將感光性樹脂層不 除’得到滿意的結果。 淨用稀釋劑時，因會得 ，EBR)處理特性的^ 之效果’因此，可使半 產性提高。 本發明的感光性樹脂洗 到了解。 釋劑的製造Page 10 1229786 Case No. 91101470 Amendment V. Description of the Invention (6) The diluent composed of the two basic properties of S is mixed with more than one co-solvent i 0 ~ 90 0% by weight to constitute the 'best The examples are mixed co-solvents of 0-50% by weight. The co-solvents mentioned above are selected from ethylene glycol monomethyl ether acetate (EGAEA), such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, and propylene glycol monobutyl ether. Ethers of propylene glycol monoalkane ethers; such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monobutyl ether acetate, propylene glycol monoalkyl ether acetate S; such as ethyl ethoxypropionate, Methylethoxypropionate, butylethoxypropionate monooxyparenone esters, such as n-butyl acetate, ethyl acetate, ethyl acetate, ethyl lactate, ethyl lactate, Butylate lactate purposes; such as 2-heptanone, methyl isobutyl ketone, methyl ethyl ketone, cyclohexanone ketones, or these combination groups are more appropriate. In the above-mentioned mixed co-solvent of the present invention, the propylene glycol monomethyl scale has excellent solubility for the phenol resin and the photoactive substance of the photosensitive resin, and the main value LD50 (oral) is 5 g / kg. Immediately after the human body, it will be eight: for C-S and alcohol, so the toxicity will be less, so it is safe for those who eat the seven sounds. However, when using a high vapor pressure, its volatility will be high later. If it is used for a long time, it will cause the operator to feel uncomfortable due to the foul odor. Also, its viscosity is quite high, so it is necessary to separate it. Difficulties are caused by additional use. Its physical properties are a boiling point of 1 2 1 ° C and an ignition point of 3 2. (: Du ☆ (25 ° C) is 1.96 cps, and the vapor pressure (25 ° C) is 12.6 mmHg. Among the other selected co-solvents used above, hexanediol monoether acetate (boiling point It is 1 4 4. 0, the vapor pressure is 2.0 mm H g), the internal glycol monomethyl 1229786 ---- room number 91101470_ year month day amendment five 'invention description (7) _ propionic acid vinegar (boiling point is 161. (:, vapor pressure is 0.9mmHg), butyl acetate (Buddha point is 126 ° C, vapor pressure is 12mmIIg), propylene glycol monomethyl ether acetate (> Verdue point is 146 ° C, vapor pressure is 3.8mmHg), fluorenyl ethoxypropionate (the hydrazone point is 142.0, acetic acid acetate (boiling point is 17 ° C, vapor pressure is ^ Li ^) because of its high volatility, it can be used as a supplementary solvent to A certain ratio is used as a supplementary ingredient of the diluent. The diluent containing this substance can maintain high dissolving properties for the photosensitive resin, suitable hair f, and viscosity, and can remove the interface of the photosensitive resin. Excellent linearity. It is also used in addition to the hair-based ester and the co-solvent mentioned above. In addition to the above two salts, the thinner can also use other organic solvents that are limited to the amount of this solution, so that it can dissolve beautifully important parts. [Effective, straight, linear ten-points of life, using the bead bleaching tree seed and surface release agent group Example 1] The rare volatility of the present invention is The invention of the efficient photosensitivity washing (Edge Bead grease treatment cross-section lithography method is added to the compound to make the photosensitive resin release agent, low toxicity and short-term addition to the resin wash Rinse improvement process Shengsheng It is clear that the use of the thinner is excellent for the resins and that the photosensitive resin layer is not removed when the interface is available. You can get satisfactory results when using the thinner. EBR ) The effect of ^ of the processing characteristics can improve the semi-productivity. The photosensitive resin of the present invention has been understood. Production of a release agent
第12頁 1229786 案號 91101470 A_Μ 曰 修正 五、發明說明（8) 以不同組合比的稀釋劑1〜稀釋劑1 6來製造比較例1及 2，表示如下列的〔表1〕 〔表1〕 各種稀釋劑以及比較例的製造（單位：重量％ ) 區分 組合比 區分 組合比 稀釋劑1 DBE - 100 稀釋劑10 DBE ： EGMEA - 30:70 稀釋劑2 DBE ： ΡΜΡ =20:80 稀釋劑11 DBE : HP = 10:90 稀釋劑3 DBE ： ΡΜΡ - 30:70 稀釋劑12 DBE ·· PGME 二 20:80 稀釋劑4 DBE ： ΡΜΡ - 70:30 稀釋劑13 DBE : PGME 二 30:70 稀釋劑5 DBE : η-ΒΑ = 30:70 稀釋劑14 DBE : PGME = 40:60 稀釋劑6 DBE ： n-BA = 70:30 稀釋劑15 DBE : DPM = 30:70 稀釋劑7 DBE ： PGMEA - 30:70 稀釋劑16 DBE : EAA = 30:70 稀釋劑8 DBE ： PGMEA - 50:50 比較例1 PGMEA ： PGME - 30:70 稀釋劑9 DBE : PGMEA 二 70:30 比較例2 PMP = 100 備註： DBE :二鹽基性酯（二曱戊二酸酯57〜63重量％，二f琥珀酸酯21 〜27重％，二曱己二酸酯12〜20重量％) PMP :丙二醇曱醚丙酸酯 n-BA : η-乙酸丁酯 PGMEA :丙二醇單曱醚乙酸酯 EGMEA:乙二醇單曱醚乙酸酯 丽Ρ:曱基曱氧基丙酸酯 ΕΑΑ:乙酸乙酯 PGME :丙二醇單曱醚 DPM :二丙二醇單曱醚 EGMEA:乙二醇單曱醚乙酸酯Page 12 1229786 Case No. 91101470 A_M Revision V. Description of the invention (8) Comparative Examples 1 and 2 were prepared with diluent 1 to diluent 16 of different combination ratios, as shown in the following [Table 1] [Table 1] Production of various thinners and comparative examples (unit: weight%) Differentiated combination ratio Differentiated combination ratio thinner 1 DBE-100 thinner 10 DBE: EGMEA-30:70 thinner 2 DBE: PP = 20:80 thinner 11 DBE : HP = 10:90 Thinner 3 DBE: PP- 30:70 Thinner 12 DBE ·· PGME II 20:80 Thinner 4 DBE: PP- 70:30 Thinner 13 DBE: PGME II 30:70 Thinner 5 DBE: η-ΒΑ = 30:70 Thinner 14 DBE: PGME = 40:60 Thinner 6 DBE: n-BA = 70:30 Thinner 15 DBE: DPM = 30:70 Thinner 7 DBE: PGMEA-30: 70 Thinner 16 DBE: EAA = 30:70 Thinner 8 DBE: PGMEA-50:50 Comparative Example 1 PGMEA: PGME-30:70 Thinner 9 DBE: PGMEA Two 70:30 Comparative Example 2 PMP = 100 Remarks: DBE : Dibasic ester (57-63% by weight of di-glutarate, 21-27% by weight of dif-succinate, 12-20% by weight of diadipate) PMP: propylene glycol fluorenyl ether propionate n-BA: η-butyl acetate PGMEA: propylene glycol monofluorenyl ether acetate EGMEA: ethylene glycol monofluorenyl acetate RP: fluorenyl methoxypropionate EAA: Ethyl acetate PGME: propylene glycol monomethyl ether DPM: dipropylene glycol monomethyl ether EGMEA: ethylene glycol monomethyl ether acetate
第13頁 案號 1229786 五、發明說明（9) 〔實施例2〕 91101470___± 溶解速度測试 修正 為了對本發明之豨釋劑的感光性樹脂進行溶解速度之 測試，上述〔表1〕之「稀釋劑1〜稀釋劑9」係使用 SLP-H20(DONGWOO FINE-CIIEM(株）製）感光性樹脂製品， 「稀釋劑1 0〜稀釋劑1 5」則使用cpd —0727 LG(DONG J IN S Ε Μ I CIIE Μ (株）製）感光性樹脂製品，「比較例1及2」則使 用SLP-H2〇(DONGWO〇D FINE-CHEM(株）製）感光性樹脂製品 進行測試。 cm 為了測試，首先將上述各感光性樹脂製品塗佈在 石夕晶片上，經過以8(TC進行3分鐘軟熱以後’切成lcmxf 的试片。將上述的各試片，以室溫把它沈殿纟〔表 J稀釋劑溶液以及比較例的溶液中來測試感光性之 $ ，去除的時間。其結果的溶解速度則如下表之〔表2〕， 〔貧施例3〕 直線性的評價 κ ^ u ^ 、 2〕一樣，對已去除了感光性樹胪 層的試片，使用光學顯彳$ J知 結果以3等級來加予評僧〜繼/介面的直線性’將其 果。 >。下列〔表2〕係表示該評價的結Case No. 1229786 on page 13 V. Explanation of the invention (9) [Example 2] 91101470 ___ ± Dissolution rate test correction In order to test the dissolution rate of the photosensitive resin of the release agent of the present invention, the above [Table 1] "dilute" Agent 1 ~ Diluent 9 "uses SLP-H20 (Dongwo Fine-Ciiem Co., Ltd.) photosensitive resin products, and" Diluent 1 0 ~ Diluent 15 "uses cpd-0727 LG (DONG J IN S Ε MI CIIE M. Co., Ltd.) photosensitive resin products, and "Comparative Examples 1 and 2" were tested using SLP-H20 (DONGWOO FINE-CHEM Co., Ltd.) photosensitive resin products. cm For testing, firstly apply the above-mentioned photosensitive resin products on the Shixi wafer, and then cut into lcmxf test pieces after soft-heating at 8 ° C for 3 minutes. Shen Dianzheng [Table J in the diluent solution and the solution of the comparative example to test the sensitivity of $, the removal time. The dissolution rate of the results is shown in the following table [Table 2], [Poor Example 3] Linearity evaluation κ ^ u ^, 2], for the test piece from which the photosensitive tree shrew layer has been removed, the optical display is used to determine the results by adding 3 levels to the linearity of the successor / interface. > The following [Table 2] shows the results of the evaluation
J229786 案號 - —^^ &、發明說明（10) 〔表2〕各種稀釋剩及比較例對感光性樹腊的溶解速度以直線性之 評價Case No. J229786-^^ & Description of the invention (10) [Table 2] Linearity evaluation of the dissolution rate of photosensitive wax with various dilution residues and comparative examples
溶解|度 直線性 區分 溶解速度 直線性 劑 1 B A 稀釋劑IQ A 稀釋劑2 A_ A 稀釋劑11 B A 漫昼劑3 ~ΊΤ^ —___— A ! "二---- 稀釋劑1 2 A ——--— A 劑 4 A B 稀釋劑13 A A 遇昼劑5 A B 稀釋劑14 B -----— A 遇隻劑6 B B 稀釋劑15 A 漫巻劑7 B A 稀釋劑16 B A 漫5劑8 B A 比較例1 C B 應慶劑9 B B —— 比較例2 B 備註： 有關溶解速度： A:去除速度快 B :普通 C:去除速度甚慢 有關直線性：Dissolution | Degree of linearity Dissolution Dissolution rate Linearity agent 1 BA thinner IQ A thinner 2 A_ A thinner 11 BA diluent 3 ~ ΊΤ ^ —___— A! &Quot; 二 ---- thinner 1 2 A ——--— A agent 4 AB thinner 13 AA Daytime agent 5 AB thinner 14 B -----— A case only agent 6 BB thinner 15 A diffuse tincture 7 BA thinner 16 BA diffuse 5 agents 8 BA Comparative Example 1 CB Yingxin 9 BB —— Comparative Example 2 B Remarks: About dissolution speed: A: fast removal speed B: ordinary C: very slow removal speed related linearity:
A 處理k/f面很漂梵。（直線性高） 處理斷面稍有被侵蝕。（直線性普通，略有侵蝕現象） 處理斷面殘留有過量的殘留物。（直線性低，撕裂現象）A is very vague when dealing with k / f surfaces. (High linearity) The treated section is slightly eroded. (Linearity is normal, slightly eroded) Excessive residues remain on the treated section. (Low linearity, tearing phenomenon)
第15頁 I229786 案號 五、發明說明（11)P.15 I229786 Case number V. Description of invention (11)
修正 從〔表2〕的本發明之感光性樹脂洗淨用稀釋劑以及 比較例的溶解速度及直線性之評價結果可以看出，本發明 的稀釋劑具有比比較例更有優異的上述之溶解速度以及直 線性的特性。雖然，在個別的性能方面有和比較例相類或 者是稍有差異些’但是，總合的可說是良好。 特別是如上述的，稀釋劑之感光膜去除介面的直線性 係和溶解速度、揮發性以及粘度有相關的要素。可以從第 1圖〜第4圖之光學顯微鏡相片來看出，該直線性則本發明 的稀釋劑比比較例更為優異。第1圖係將SLP — H2〇感光性樹 月曰在氧化矽晶片之試片上，經塗佈/乾燥後使用DBE 一 pH?稀 釋劑（〔表1〕之「稀釋劑3」，DBE : PMP = 30:70重量比） 使它沈澱，第2圖為將CpD-0727LG感光性樹脂在氧化;5夕晶 7之試片上，經塗佈/乾燥後使用本發明的DBE — pGME稀釋 劑（〔表1〕之「稀釋劑12」，DBE : PGME = 30:70重量％) 使它沈殺，第3圖為將SLP — H2〇感光性樹脂在氧化矽晶片之 13式片上’經塗佈/乾燥後使用比較例之PGMEA-PGME稀釋劑 (―〔表1〕之「比較例1」，PGMEA : PGME = 3 0:70重量％)使 它沈澱，第4圖為將Slp-H20感光性樹脂在氧化矽晶片之試 片上’經塗佈/乾燥後使用比較例之pMp稀釋劑（〔表1〕之 為〔比較例2〕）使它沈澱。使用比較例丨之稀釋劑的第3圖則 ==有感光膜的侵蝕（Attack )現象，使用比較例2之稀 制的第4圖則顯示有感光膜的撕裂現象。 在所添附的第1圖及第2圖所示之本發明的稀釋劑以外 之其他的各種稀釋劑亦有顯示出類似的直線性。Correction From [Table 2], it can be seen from the evaluation results of the dissolution rate and linearity of the photosensitive resin washing thinner of the present invention and the comparative example that the thinner of the present invention has the above-mentioned dissolution that is superior to the comparative example. Speed and linearity. Although the individual performance is similar to or slightly different from that of the comparative example ', it can be said that the overall performance is good. In particular, as described above, the linearity of the photosensitive film removal interface of the diluent is related to the dissolution rate, volatility, and viscosity. It can be seen from the photomicrographs of Figs. 1 to 4 that the linearity of the thinner of the present invention is more excellent than that of the comparative example. Fig. 1 shows the application of SLP-H2O photosensitivity tree on a silicon wafer wafer, after coating / drying, using DBE-pH? Thinner ("Table 3" "Diluent 3", DBE: PMP = 30:70 weight ratio) to make it precipitate, the second figure is to oxidize CpD-0727LG photosensitive resin; on the test piece of 5x7, after coating / drying, use the DBE-pGME thinner ([ Table 1] "Diluent 12", DBE: PGME = 30: 70% by weight) to make it sink. Figure 3 shows SLP-H2O photosensitive resin on a type 13 wafer of silicon oxide wafer. After drying, the PGMEA-PGME thinner of the comparative example ("Comparative Example 1" of [Table 1], PGMEA: PGME = 3 0: 70% by weight) was used to precipitate it. The fourth figure is the Slp-H20 photosensitive resin On the test piece of the silicon oxide wafer, after being coated / dried, the pMp thinner of the comparative example ([Comparative Example 2] of [Table 1]) was used to precipitate it. The third diagram using the thinner of Comparative Example 丨 == Attack of the photosensitive film is used, and the fourth diagram using the thinner of Comparative Example 2 shows the tearing of the photosensitive film. Various thinners other than the diluent of the present invention shown in the attached Figures 1 and 2 also show similar linearity.
第16頁 案號 91101470 (12)Page 16 Case number 91101470 (12)
1229786 五、發明說明 以上，雖然詳細的說明了本發明之實施例9 明若在本發明之技術恩想範圍内而進行各種變形以、炎务 者，當然皆屬本發明的申請專利範圍内。 ^以及修正 〔發明效果〕 綜合上述的說明，本發明具有提供下列的效果： (1) 從基板表面來去除感光性樹脂層之部份 樹脂時，洗淨之溶解性則甚為優異，並且在短時間| '=— 成，所以可有效率的進行使用。 ’可凡 (2) 低的蒸氣壓、低毒性、不污染清淨室及無爆 危險性，不會有妨害作業者健康之虞。 (3 )顯現出漂亮的感光性樹脂的介面。 (j)可完全的去除所殘留之感光性樹脂層，所以可防 _在硌出认細構^回路的過程中之散焦（d㊀^ c u $ )或散亂 2，因此可以提高整個工程之良品率，使最終製 提升。 (5 )因為粘度低，所以可降低喷嘴之喷射壓，因此可 減低使用量，提高經濟性。1229786 V. Description of the Invention Although the embodiment 9 of the present invention has been described in detail above, it will be understood that if various modifications and changes are made within the technical scope of the present invention, it is certainly within the scope of the present invention's patent application. ^ And correction [Inventive effect] Based on the above description, the present invention provides the following effects: (1) When a part of the resin of the photosensitive resin layer is removed from the surface of the substrate, the cleaning solubility is very excellent, and Short time | '= — completed, so it can be used efficiently. ”可 凡 (2) Low vapor pressure, low toxicity, non-polluting clean room and non-explosive hazard, it will not harm the health of the operator. (3) An interface showing a beautiful photosensitive resin. (j) The remaining photosensitive resin layer can be completely removed, so it can prevent defocus (d㊀ ^ cu $) or scattered 2 during the process of identifying the fine structure ^ circuit, so it can improve the overall project. The yield rate improves the final system. (5) Because the viscosity is low, the spray pressure of the nozzle can be reduced, so the amount of use can be reduced and the economy can be improved.
第17頁 1229786 -j號91101470 年月日 修正_ 圖式簡單說明 第1圖為將SLP-H20感光性樹脂在氧化矽晶片之試片 上’經塗佈/乾燥後使用本發明的Dbe-PMP稀釋劑（DBE : PMP = 3 0 : 7 0重量％)使它沈澱以後，為了進行直線性之評 價所攝影的光學顯微鏡相片。 第2圖為將CPD-0 72 7LG感光性樹脂在氧化矽晶片之試 片上’經塗佈/乾燥後使用本發明的DBE-PGME稀釋劑 (DBE : PGME = 3 0:70重量％)使它沈澱以後，為了進行評價 其直線性所攝影的光學顯微鏡相片。 貝 第3圖為將SLP-H20感光性樹脂在氧化矽晶片之試片 上，經塗佈/乾燥後使用比較例之PGMEA-PGME稀釋劑 (PGMEA :PGME=30:70重量％)使它沈澱以後，為了進行坪 價其直線性所攝影的光學顯微鏡相片，有顯示出感光Z 2 侵姓（A11 a c k )現象。 第4圖為將SLP-H20感光性樹脂在氧化石夕晶片之試片 上，經塗佈/乾燥後使用比較例之P MP稀釋劑使它沈殿y 後’為了進行評價其直線性所攝影的光學顯微鏡相片X以 顯示出感光膜之撕裂現象。 ’有Page 17 1229786-j No. 91101470 Month-Date Amendment _ Brief description of the drawing. The first picture shows the application of SLP-H20 photosensitive resin on a silicon wafer wafer after coating / drying and diluting with Dbe-PMP A photomicrograph of an optical microscope (DBE: PMP = 30: 70% by weight) was used to evaluate the linearity after it was precipitated. Fig. 2 shows the application of CPD-0 72 7LG photosensitive resin on a silicon wafer wafer after coating / drying using the DBE-PGME thinner of the present invention (DBE: PGME = 3 0: 70% by weight). After precipitation, an optical microscope photograph was taken to evaluate the linearity. Fig. 3 is a sample of SLP-H20 photosensitive resin on a silicon oxide wafer. After coating / drying, the PGMEA-PGME thinner of the comparative example (PGMEA: PGME = 30: 70% by weight) was used to precipitate it. In order to carry out the linearity photo of the optical microscope, it is shown that the photosensitive Z 2 invades the surname (A11 ack). Fig. 4 shows the optical properties of SLP-H20 photosensitive resin on a test piece of oxidized stone wafer. After coating / drying it, using the MP thinner of Comparative Example to make it sink. Photomicrograph X shows the tearing of the photosensitive film. 'Have
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020010075300A KR20030044517A (en) | 2001-11-30 | 2001-11-30 | Thinner composition for rinsing photoresist |
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| TWI229786B true TWI229786B (en) | 2005-03-21 |
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| KR20030046868A (en) * | 2001-12-07 | 2003-06-18 | 주식회사 덕성 | Thinner for rinsing organic layer |
| KR100483846B1 (en) * | 2002-10-15 | 2005-04-19 | 삼성전자주식회사 | Thinner composition and method for stripping a photoresist using the same |
| KR100764376B1 (en) * | 2005-12-30 | 2007-10-08 | 주식회사 하이닉스반도체 | Thinner composition for inhibiting photoresist from drying |
| KR101886750B1 (en) * | 2011-09-22 | 2018-08-13 | 삼성전자 주식회사 | Thinner composition for RRC process, apparatus for supplying the same, and thinner composition for EBR process |
| KR102022857B1 (en) * | 2019-08-13 | 2019-09-19 | 재원산업 주식회사 | Composition for removing styrene-acrylonitrile resin and recovering method of organic solvent contained in the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4617251A (en) * | 1985-04-11 | 1986-10-14 | Olin Hunt Specialty Products, Inc. | Stripping composition and method of using the same |
| EP0412475B1 (en) * | 1989-08-07 | 1993-11-10 | E.I. Du Pont De Nemours And Company | Cleaning composition of dibasic ester and hydrocarbon solvent, and cleaning process |
| JP3157301B2 (en) * | 1992-09-11 | 2001-04-16 | 旭化成株式会社 | Ink cleaning composition |
| US5604193A (en) * | 1994-12-08 | 1997-02-18 | Dotolo Research Corporation | Adhesive and enamel remover, and method of use with d-limonene, dibasic ester, an N-methyl pyrrolidone |
| US5909744A (en) * | 1996-01-30 | 1999-06-08 | Silicon Valley Chemlabs, Inc. | Dibasic ester stripping composition |
| US5741368A (en) * | 1996-01-30 | 1998-04-21 | Silicon Valley Chemlabs | Dibasic ester stripping composition |
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