CN114080570B - 用于移除边缘保护层及残余金属硬掩模组分的冲洗剂及其使用方法 - Google Patents

用于移除边缘保护层及残余金属硬掩模组分的冲洗剂及其使用方法 Download PDF

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Publication number
CN114080570B
CN114080570B CN202080049603.4A CN202080049603A CN114080570B CN 114080570 B CN114080570 B CN 114080570B CN 202080049603 A CN202080049603 A CN 202080049603A CN 114080570 B CN114080570 B CN 114080570B
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China
Prior art keywords
acetic acid
hard mask
rinse agent
wafer
rinse
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CN202080049603.4A
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English (en)
Chinese (zh)
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CN114080570A (zh
Inventor
M·D·拉曼
S·K·穆伦
赵俊衍
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Merck Patent GmbH
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Merck Patent GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
CN202080049603.4A 2019-07-08 2020-07-06 用于移除边缘保护层及残余金属硬掩模组分的冲洗剂及其使用方法 Active CN114080570B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962871346P 2019-07-08 2019-07-08
US62/871,346 2019-07-08
PCT/EP2020/068936 WO2021004985A1 (en) 2019-07-08 2020-07-06 Rinse and method of use thereof for removing edge protection layers and residual metal hardmask components

Publications (2)

Publication Number Publication Date
CN114080570A CN114080570A (zh) 2022-02-22
CN114080570B true CN114080570B (zh) 2025-02-28

Family

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CN202080049603.4A Active CN114080570B (zh) 2019-07-08 2020-07-06 用于移除边缘保护层及残余金属硬掩模组分的冲洗剂及其使用方法

Country Status (6)

Country Link
US (1) US12099305B2 (cg-RX-API-DMAC7.html)
EP (1) EP3997520B1 (cg-RX-API-DMAC7.html)
JP (2) JP7550211B2 (cg-RX-API-DMAC7.html)
KR (1) KR102626153B1 (cg-RX-API-DMAC7.html)
CN (1) CN114080570B (cg-RX-API-DMAC7.html)
WO (1) WO2021004985A1 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240385522A1 (en) * 2023-05-15 2024-11-21 Samsung Sdi Co., Ltd. Composition for removing edge beads from metal containing resists, and method of forming patterns including step of removing edge beads utilizing the composition, and a system of forming patterns

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105319874A (zh) * 2014-07-31 2016-02-10 Jsr株式会社 半导体基板清洗用组合物

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5236552A (en) * 1992-04-13 1993-08-17 At&T Bell Laboratories Photoresist stripping method
JP3390245B2 (ja) * 1993-06-01 2003-03-24 富士通株式会社 洗浄液及び洗浄方法
US5612303B1 (en) * 1993-06-15 2000-07-18 Nitto Chemical Industry Co Ltd Solvent composition
JPH10219156A (ja) * 1997-02-12 1998-08-18 Kansai Paint Co Ltd 塗膜の除去方法
JP3924910B2 (ja) * 1998-03-31 2007-06-06 三菱電機株式会社 半導体装置の製造方法
US6261735B1 (en) * 1998-11-24 2001-07-17 Silicon Valley Chemlabs, Inc. Composition and method for removing probing ink and negative photoresist from silicon wafers enclosures
US6413202B1 (en) * 1999-01-21 2002-07-02 Alliedsignal, Inc. Solvent systems for polymeric dielectric materials
JP4042142B2 (ja) 2000-09-08 2008-02-06 Ｊｓｒ株式会社 Ｅｌ表示素子の隔壁形成用感放射線性樹脂組成物、隔壁およびｅｌ表示素子
US6566315B2 (en) * 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
JP4585299B2 (ja) * 2004-12-09 2010-11-24 東京応化工業株式会社 リソグラフィー用リンス液及びそれを用いたレジストパターン形成方法
US7884062B2 (en) * 2006-02-23 2011-02-08 Tokyo Ohka Kogyo Co., Ltd. Cleaning liquid for lithography and cleaning method using same
SG177915A1 (en) 2006-12-21 2012-02-28 Advanced Tech Materials Liquid cleaner for the removal of post-etch residues
KR20100082012A (ko) * 2007-11-16 2010-07-15 이케이씨 테크놀로지, 인코포레이티드 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물
JP5639755B2 (ja) * 2008-11-27 2014-12-10 富士フイルム株式会社 有機溶剤を含有する現像液を用いたパターン形成方法及びこれに用いるリンス液
SG10201405263XA (en) * 2009-09-02 2014-11-27 Wako Pure Chem Ind Ltd Resist remover composition and method for removing resist using the composition
US8568958B2 (en) 2011-06-21 2013-10-29 Az Electronic Materials Usa Corp. Underlayer composition and process thereof
JP5988438B2 (ja) 2012-08-02 2016-09-07 東京エレクトロン株式会社 塗布処理方法及び塗布処理装置
US9315636B2 (en) 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
US9296922B2 (en) 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US9409793B2 (en) 2014-01-14 2016-08-09 Az Electronic Materials (Luxembourg) S.A.R.L. Spin coatable metallic hard mask compositions and processes thereof
JPWO2016104565A1 (ja) * 2014-12-26 2017-09-21 富士フイルム株式会社 有機系処理液およびパターン形成方法
US9499698B2 (en) 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
KR20180099681A (ko) * 2015-12-25 2018-09-05 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 조성물, 레지스트 패턴 형성방법, 및, 회로 패턴 형성방법
KR102610448B1 (ko) 2016-08-12 2023-12-07 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
CN110418811B (zh) 2017-03-16 2022-05-13 默克专利股份有限公司 光刻组合物及其使用方法
JP6426223B2 (ja) * 2017-03-31 2018-11-21 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105319874A (zh) * 2014-07-31 2016-02-10 Jsr株式会社 半导体基板清洗用组合物

Also Published As

Publication number Publication date
EP3997520B1 (en) 2023-12-20
KR102626153B1 (ko) 2024-01-16
US12099305B2 (en) 2024-09-24
WO2021004985A1 (en) 2021-01-14
JP2022540086A (ja) 2022-09-14
JP7550211B2 (ja) 2024-09-12
EP3997520A1 (en) 2022-05-18
JP7792461B2 (ja) 2025-12-25
KR20220032581A (ko) 2022-03-15
TW202111105A (zh) 2021-03-16
US20220308455A1 (en) 2022-09-29
JP2024105549A (ja) 2024-08-06
CN114080570A (zh) 2022-02-22

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