KR102626153B1 - 에지 보호층 및 잔류 금속 하드마스크 성분을 제거하기 위한 린스 및 이의 사용 방법 - Google Patents

에지 보호층 및 잔류 금속 하드마스크 성분을 제거하기 위한 린스 및 이의 사용 방법 Download PDF

Info

Publication number
KR102626153B1
KR102626153B1 KR1020227004116A KR20227004116A KR102626153B1 KR 102626153 B1 KR102626153 B1 KR 102626153B1 KR 1020227004116 A KR1020227004116 A KR 1020227004116A KR 20227004116 A KR20227004116 A KR 20227004116A KR 102626153 B1 KR102626153 B1 KR 102626153B1
Authority
KR
South Korea
Prior art keywords
delete delete
weight
rinse
acetic acid
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227004116A
Other languages
English (en)
Korean (ko)
Other versions
KR20220032581A (ko
Inventor
엠 달릴 라만
세일럼 케이 멀린
준연 조
Original Assignee
메르크 파텐트 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 메르크 파텐트 게엠베하 filed Critical 메르크 파텐트 게엠베하
Publication of KR20220032581A publication Critical patent/KR20220032581A/ko
Application granted granted Critical
Publication of KR102626153B1 publication Critical patent/KR102626153B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H01L21/02087—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
KR1020227004116A 2019-07-08 2020-07-06 에지 보호층 및 잔류 금속 하드마스크 성분을 제거하기 위한 린스 및 이의 사용 방법 Active KR102626153B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962871346P 2019-07-08 2019-07-08
US62/871,346 2019-07-08
PCT/EP2020/068936 WO2021004985A1 (en) 2019-07-08 2020-07-06 Rinse and method of use thereof for removing edge protection layers and residual metal hardmask components

Publications (2)

Publication Number Publication Date
KR20220032581A KR20220032581A (ko) 2022-03-15
KR102626153B1 true KR102626153B1 (ko) 2024-01-16

Family

ID=71523150

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227004116A Active KR102626153B1 (ko) 2019-07-08 2020-07-06 에지 보호층 및 잔류 금속 하드마스크 성분을 제거하기 위한 린스 및 이의 사용 방법

Country Status (6)

Country Link
US (1) US12099305B2 (cg-RX-API-DMAC7.html)
EP (1) EP3997520B1 (cg-RX-API-DMAC7.html)
JP (2) JP7550211B2 (cg-RX-API-DMAC7.html)
KR (1) KR102626153B1 (cg-RX-API-DMAC7.html)
CN (1) CN114080570B (cg-RX-API-DMAC7.html)
WO (1) WO2021004985A1 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240385522A1 (en) * 2023-05-15 2024-11-21 Samsung Sdi Co., Ltd. Composition for removing edge beads from metal containing resists, and method of forming patterns including step of removing edge beads utilizing the composition, and a system of forming patterns

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017111165A1 (ja) 2015-12-25 2017-06-29 三菱瓦斯化学株式会社 化合物、樹脂、組成物、レジストパターン形成方法、及び、回路パターン形成方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5236552A (en) * 1992-04-13 1993-08-17 At&T Bell Laboratories Photoresist stripping method
JP3390245B2 (ja) * 1993-06-01 2003-03-24 富士通株式会社 洗浄液及び洗浄方法
US5612303B1 (en) * 1993-06-15 2000-07-18 Nitto Chemical Industry Co Ltd Solvent composition
JPH10219156A (ja) * 1997-02-12 1998-08-18 Kansai Paint Co Ltd 塗膜の除去方法
JP3924910B2 (ja) * 1998-03-31 2007-06-06 三菱電機株式会社 半導体装置の製造方法
US6261735B1 (en) * 1998-11-24 2001-07-17 Silicon Valley Chemlabs, Inc. Composition and method for removing probing ink and negative photoresist from silicon wafers enclosures
US6413202B1 (en) * 1999-01-21 2002-07-02 Alliedsignal, Inc. Solvent systems for polymeric dielectric materials
JP4042142B2 (ja) 2000-09-08 2008-02-06 Ｊｓｒ株式会社 Ｅｌ表示素子の隔壁形成用感放射線性樹脂組成物、隔壁およびｅｌ表示素子
US6566315B2 (en) * 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
JP4585299B2 (ja) * 2004-12-09 2010-11-24 東京応化工業株式会社 リソグラフィー用リンス液及びそれを用いたレジストパターン形成方法
US7884062B2 (en) * 2006-02-23 2011-02-08 Tokyo Ohka Kogyo Co., Ltd. Cleaning liquid for lithography and cleaning method using same
SG177915A1 (en) 2006-12-21 2012-02-28 Advanced Tech Materials Liquid cleaner for the removal of post-etch residues
KR20100082012A (ko) * 2007-11-16 2010-07-15 이케이씨 테크놀로지, 인코포레이티드 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물
JP5639755B2 (ja) * 2008-11-27 2014-12-10 富士フイルム株式会社 有機溶剤を含有する現像液を用いたパターン形成方法及びこれに用いるリンス液
SG10201405263XA (en) * 2009-09-02 2014-11-27 Wako Pure Chem Ind Ltd Resist remover composition and method for removing resist using the composition
US8568958B2 (en) 2011-06-21 2013-10-29 Az Electronic Materials Usa Corp. Underlayer composition and process thereof
JP5988438B2 (ja) 2012-08-02 2016-09-07 東京エレクトロン株式会社 塗布処理方法及び塗布処理装置
US9315636B2 (en) 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
US9296922B2 (en) 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US9409793B2 (en) 2014-01-14 2016-08-09 Az Electronic Materials (Luxembourg) S.A.R.L. Spin coatable metallic hard mask compositions and processes thereof
JP6350080B2 (ja) * 2014-07-31 2018-07-04 Jsr株式会社 半導体基板洗浄用組成物
JPWO2016104565A1 (ja) * 2014-12-26 2017-09-21 富士フイルム株式会社 有機系処理液およびパターン形成方法
US9499698B2 (en) 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
KR102610448B1 (ko) 2016-08-12 2023-12-07 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
CN110418811B (zh) 2017-03-16 2022-05-13 默克专利股份有限公司 光刻组合物及其使用方法
JP6426223B2 (ja) * 2017-03-31 2018-11-21 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017111165A1 (ja) 2015-12-25 2017-06-29 三菱瓦斯化学株式会社 化合物、樹脂、組成物、レジストパターン形成方法、及び、回路パターン形成方法

Also Published As

Publication number Publication date
EP3997520B1 (en) 2023-12-20
CN114080570B (zh) 2025-02-28
US12099305B2 (en) 2024-09-24
WO2021004985A1 (en) 2021-01-14
JP2022540086A (ja) 2022-09-14
JP7550211B2 (ja) 2024-09-12
EP3997520A1 (en) 2022-05-18
JP7792461B2 (ja) 2025-12-25
KR20220032581A (ko) 2022-03-15
TW202111105A (zh) 2021-03-16
US20220308455A1 (en) 2022-09-29
JP2024105549A (ja) 2024-08-06
CN114080570A (zh) 2022-02-22

Similar Documents

Publication Publication Date Title
JP7437455B2 (ja) リソグラフィ用組成物及びそれの使用法
EP1138726B1 (en) Polymer remover
CN1938647B (zh) 用于蚀刻后去除基片上沉积的光致抗蚀剂和/或牺牲性抗反射物质的组合物和方法
JP7294859B2 (ja) 洗浄液、及び金属レジストを備えた支持体の洗浄方法
US11119410B2 (en) Cleaning liquid, and method of cleaning substrate provided with metal resist
JP7330000B2 (ja) 表面処理剤、表面処理方法及び基板表面の領域選択的製膜方法
US11131932B2 (en) Cleaning liquid, and method of cleaning substrate provided with metal resist
JP7179147B1 (ja) 金属レジスト除去用洗浄液、及び該洗浄液を用いた洗浄方法
EP1501916B1 (en) Non-corrosive cleaning compositions for removing etch residues
KR102084164B1 (ko) 반도체 공정용 조성물 및 반도체 공정
JP2025023953A (ja) 低ｋ値の材料、銅、コバルト、および／またはタングステンの層が存在する状態で、ハードマスクおよび／またはエッチング停止層を選択的にエッチングするための組成物および方法
JP7792461B2 (ja) 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用
KR20190105766A (ko) 반도체 공정용 조성물 및 반도체 공정
TWI917328B (zh) 用於移除邊緣保護層及殘餘金屬硬遮罩組分之清洗劑及其使用方法
TWI473877B (zh) Residual removal of liquid after the semiconductor dry process and the use of its residue removal method
KR20160109645A (ko) 포토레지스트 제거용 세정액 조성물
JPH05136107A (ja) 蒸気相食刻剤と食刻法
WO2025068373A1 (en) Lithography compositions and methods of use thereof for sustainable and greener solutions for edge protection layers

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000