JP7453020B2 - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
- Publication number
- JP7453020B2 JP7453020B2 JP2020038822A JP2020038822A JP7453020B2 JP 7453020 B2 JP7453020 B2 JP 7453020B2 JP 2020038822 A JP2020038822 A JP 2020038822A JP 2020038822 A JP2020038822 A JP 2020038822A JP 7453020 B2 JP7453020 B2 JP 7453020B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- nozzle
- processing liquid
- processing
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims description 236
- 238000003672 processing method Methods 0.000 title claims description 12
- 239000007788 liquid Substances 0.000 claims description 167
- 230000002093 peripheral effect Effects 0.000 claims description 96
- 238000007599 discharging Methods 0.000 claims description 19
- 238000005530 etching Methods 0.000 description 32
- 238000000034 method Methods 0.000 description 25
- 230000008569 process Effects 0.000 description 22
- 238000001514 detection method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 238000011282 treatment Methods 0.000 description 10
- 239000002585 base Substances 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 230000032258 transport Effects 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000013256 coordination polymer Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/02—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
- B05B1/04—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape in flat form, e.g. fan-like, sheet-like
- B05B1/044—Slits, i.e. narrow openings defined by two straight and parallel lips; Elongated outlets for producing very wide discharges, e.g. fluid curtains
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
- B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
- B05B13/04—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation
- B05B13/0405—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation with reciprocating or oscillating spray heads
- B05B13/041—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation with reciprocating or oscillating spray heads with spray heads reciprocating along a straight line
- B05B13/0415—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation with reciprocating or oscillating spray heads with spray heads reciprocating along a straight line the angular position of the spray heads relative to the straight line being modified during the reciprocating movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B3/00—Spraying or sprinkling apparatus with moving outlet elements or moving deflecting elements
- B05B3/02—Spraying or sprinkling apparatus with moving outlet elements or moving deflecting elements with rotating elements
- B05B3/021—Spraying or sprinkling apparatus with moving outlet elements or moving deflecting elements with rotating elements with means for regulating the jet relative to the horizontal angular position of the nozzle, e.g. for spraying non circular areas by changing the elevation of the nozzle or by varying the nozzle flow-rate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020038822A JP7453020B2 (ja) | 2020-03-06 | 2020-03-06 | 基板処理方法 |
TW110106261A TWI813950B (zh) | 2020-03-06 | 2021-02-23 | 基板處理方法 |
KR1020210027928A KR20210113061A (ko) | 2020-03-06 | 2021-03-03 | 기판 처리 방법 |
CN202110243978.0A CN113363180A (zh) | 2020-03-06 | 2021-03-05 | 衬底处理方法 |
KR1020230053314A KR20230062497A (ko) | 2020-03-06 | 2023-04-24 | 기판 처리 방법 |
KR1020230053315A KR102643412B1 (ko) | 2020-03-06 | 2023-04-24 | 기판 처리 방법 |
JP2024034776A JP2024053042A (ja) | 2020-03-06 | 2024-03-07 | 基板処理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020038822A JP7453020B2 (ja) | 2020-03-06 | 2020-03-06 | 基板処理方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024034776A Division JP2024053042A (ja) | 2020-03-06 | 2024-03-07 | 基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021141241A JP2021141241A (ja) | 2021-09-16 |
JP7453020B2 true JP7453020B2 (ja) | 2024-03-19 |
Family
ID=77524884
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020038822A Active JP7453020B2 (ja) | 2020-03-06 | 2020-03-06 | 基板処理方法 |
JP2024034776A Pending JP2024053042A (ja) | 2020-03-06 | 2024-03-07 | 基板処理方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024034776A Pending JP2024053042A (ja) | 2020-03-06 | 2024-03-07 | 基板処理方法 |
Country Status (4)
Country | Link |
---|---|
JP (2) | JP7453020B2 (zh) |
KR (3) | KR20210113061A (zh) |
CN (1) | CN113363180A (zh) |
TW (1) | TWI813950B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070231483A1 (en) | 2006-03-28 | 2007-10-04 | Hiromitsu Nanba | Liquid processing apparatus and liquid processing method |
JP2011029455A (ja) | 2009-07-27 | 2011-02-10 | Shibaura Mechatronics Corp | 基板の処理装置及び処理方法 |
US20150014788A1 (en) | 2013-07-12 | 2015-01-15 | Min-Yeop Park | Semiconductor device and fabricating method thereof |
JP2015103656A (ja) | 2013-11-25 | 2015-06-04 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
US20190096720A1 (en) | 2017-09-25 | 2019-03-28 | SCREEN Holdings Co., Ltd. | Substrate treatment device and substrate treatment method |
JP2019091816A (ja) | 2017-11-15 | 2019-06-13 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6064875U (ja) | 1983-10-13 | 1985-05-08 | 小瀬木 進 | 名刺用紙 |
JPH08195370A (ja) * | 1995-01-13 | 1996-07-30 | Sony Corp | エッジクリーン方法 |
US6267853B1 (en) * | 1999-07-09 | 2001-07-31 | Applied Materials, Inc. | Electro-chemical deposition system |
JP3641156B2 (ja) | 1999-03-15 | 2005-04-20 | 株式会社東芝 | 新規微生物および海生物の生物処理法 |
JP4089809B2 (ja) | 2002-03-13 | 2008-05-28 | Sumco Techxiv株式会社 | 半導体ウェーハのエッジ部の酸化膜除去装置 |
JP2007299960A (ja) * | 2006-04-28 | 2007-11-15 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4788785B2 (ja) * | 2009-02-06 | 2011-10-05 | 東京エレクトロン株式会社 | 現像装置、現像処理方法及び記憶媒体 |
-
2020
- 2020-03-06 JP JP2020038822A patent/JP7453020B2/ja active Active
-
2021
- 2021-02-23 TW TW110106261A patent/TWI813950B/zh active
- 2021-03-03 KR KR1020210027928A patent/KR20210113061A/ko not_active Application Discontinuation
- 2021-03-05 CN CN202110243978.0A patent/CN113363180A/zh active Pending
-
2023
- 2023-04-24 KR KR1020230053315A patent/KR102643412B1/ko active IP Right Grant
- 2023-04-24 KR KR1020230053314A patent/KR20230062497A/ko not_active Application Discontinuation
-
2024
- 2024-03-07 JP JP2024034776A patent/JP2024053042A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070231483A1 (en) | 2006-03-28 | 2007-10-04 | Hiromitsu Nanba | Liquid processing apparatus and liquid processing method |
JP2007266302A (ja) | 2006-03-28 | 2007-10-11 | Tokyo Electron Ltd | 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体 |
JP2011029455A (ja) | 2009-07-27 | 2011-02-10 | Shibaura Mechatronics Corp | 基板の処理装置及び処理方法 |
US20150014788A1 (en) | 2013-07-12 | 2015-01-15 | Min-Yeop Park | Semiconductor device and fabricating method thereof |
JP2015103656A (ja) | 2013-11-25 | 2015-06-04 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
US20190096720A1 (en) | 2017-09-25 | 2019-03-28 | SCREEN Holdings Co., Ltd. | Substrate treatment device and substrate treatment method |
JP2019091816A (ja) | 2017-11-15 | 2019-06-13 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TW202201522A (zh) | 2022-01-01 |
KR20230062498A (ko) | 2023-05-09 |
JP2024053042A (ja) | 2024-04-12 |
KR102643412B1 (ko) | 2024-03-05 |
JP2021141241A (ja) | 2021-09-16 |
KR20230062497A (ko) | 2023-05-09 |
CN113363180A (zh) | 2021-09-07 |
KR20210113061A (ko) | 2021-09-15 |
TWI813950B (zh) | 2023-09-01 |
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