JP7405453B2 - 半導体部品を製造するための方法 - Google Patents

半導体部品を製造するための方法 Download PDF

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JP7405453B2
JP7405453B2 JP2021564508A JP2021564508A JP7405453B2 JP 7405453 B2 JP7405453 B2 JP 7405453B2 JP 2021564508 A JP2021564508 A JP 2021564508A JP 2021564508 A JP2021564508 A JP 2021564508A JP 7405453 B2 JP7405453 B2 JP 7405453B2
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substrate
doped
drift zone
ion implantation
doping
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JP2022532048A5 (https=
JPWO2020229639A5 (https=
JP2022532048A (ja
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カサト，コンスタンティン
クリッペンドルフ，フロリアン
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エムアイツー‐ファクトリー ジーエムビーエイチ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

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  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP2021564508A 2019-05-16 2020-05-14 半導体部品を製造するための方法 Active JP7405453B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102019112985.0A DE102019112985B4 (de) 2019-05-16 2019-05-16 Verfahren zur Herstellung von Halbleiterbauelementen
DE102019112985.0 2019-05-16
PCT/EP2020/063556 WO2020229639A1 (de) 2019-05-16 2020-05-14 Verfahren zur herstellung von halbleiterbauelementen und halbleiterbauelement

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JP2022532048A JP2022532048A (ja) 2022-07-13
JP2022532048A5 JP2022532048A5 (https=) 2023-04-04
JPWO2020229639A5 JPWO2020229639A5 (https=) 2023-04-04
JP7405453B2 true JP7405453B2 (ja) 2023-12-26

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US (1) US12368047B2 (https=)
EP (1) EP3970195B1 (https=)
JP (1) JP7405453B2 (https=)
DE (1) DE102019112985B4 (https=)
WO (1) WO2020229639A1 (https=)

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Publication number Priority date Publication date Assignee Title
US20240047168A1 (en) * 2020-12-17 2024-02-08 mi2-factory GmbH Energy Filter Assembly for Ion Implantation System with at least one coupling element
WO2022128818A1 (de) 2020-12-18 2022-06-23 mi2-factory GmbH Elektronisches halbleiterbauelement und verfahren zur herstellung eines vorbehandelten verbundsubstrats für ein elektronisches halbleiterbauelement
DE102021109690A1 (de) 2021-04-16 2022-10-20 mi2-factory GmbH Elektronisches Halbleiterbauelement und Verfahren zur Herstellung eines vorbehandelten Verbundsubstrats für ein elektronisches Halbleiterbauelement
DE102020134222A1 (de) 2020-12-18 2022-06-23 mi2-factory GmbH Verfahren zur Herstellung eines vorbehandelten Verbundsubstrats und vorbehandeltes Verbundsubstrat
DE102021118315A1 (de) 2021-07-15 2023-01-19 mi2-factory GmbH Verfahren zur Herstellung eines elektronischen Halbleiterbauelements

Citations (4)

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JP2015192121A (ja) 2014-03-28 2015-11-02 ローム株式会社 半導体装置およびその製造方法
JP2016192541A (ja) 2015-02-06 2016-11-10 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ ＳｉＣベースの超接合半導体装置
JP2018014486A (ja) 2016-06-06 2018-01-25 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ パワー半導体素子を処理するためのエネルギフィルタ
JP2019046793A (ja) 2017-08-08 2019-03-22 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ イオン注入装置及び半導体デバイスの製造方法

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JP3311210B2 (ja) * 1995-07-28 2002-08-05 株式会社東芝 半導体装置およびその製造方法
DE10239312B4 (de) 2002-08-27 2006-08-17 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements mit einer Driftzone und einer Feldstoppzone und Halbleiterbauelement mit einer Driftzone und einer Feldstoppzone
US7728409B2 (en) * 2005-11-10 2010-06-01 Fuji Electric Device Technology Co., Ltd. Semiconductor device and method of manufacturing the same
EP2782121B1 (en) * 2011-11-15 2021-01-06 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
DE102013016669A1 (de) * 2013-10-08 2015-04-09 Siltectra Gmbh Kombiniertes Herstellungsverfahren zum Abtrennen mehrerer dünner Festkörperschichten von einem dicken Festkörper
CN108604600B (zh) * 2016-02-08 2021-07-16 三菱电机株式会社 碳化硅半导体装置及其制造方法
DE102016114264B4 (de) * 2016-08-02 2024-10-24 Infineon Technologies Ag Herstellungsverfahren einschliesslich einer aktivierung von dotierstoffen
DE102016122791B3 (de) * 2016-11-25 2018-05-30 mi2-factory GmbH Ionenimplantationsanlage, Filterkammer und Implantationsverfahren unter Einsatz eines Energiefilterelements
JP6833038B2 (ja) * 2017-07-19 2021-02-24 三菱電機株式会社 半導体装置の製造方法および半導体装置
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015192121A (ja) 2014-03-28 2015-11-02 ローム株式会社 半導体装置およびその製造方法
JP2016192541A (ja) 2015-02-06 2016-11-10 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ ＳｉＣベースの超接合半導体装置
JP2018014486A (ja) 2016-06-06 2018-01-25 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ パワー半導体素子を処理するためのエネルギフィルタ
JP2019046793A (ja) 2017-08-08 2019-03-22 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ イオン注入装置及び半導体デバイスの製造方法

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US12368047B2 (en) 2025-07-22
EP3970195C0 (de) 2026-02-18
DE102019112985A1 (de) 2020-11-19
DE102019112985B4 (de) 2024-07-18
EP3970195B1 (de) 2026-02-18
EP3970195A1 (de) 2022-03-23
US20220246431A1 (en) 2022-08-04
WO2020229639A1 (de) 2020-11-19
JP2022532048A (ja) 2022-07-13

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