JP7386738B2 - 基板搬送方法および基板処理装置 - Google Patents
基板搬送方法および基板処理装置 Download PDFInfo
- Publication number
- JP7386738B2 JP7386738B2 JP2020049569A JP2020049569A JP7386738B2 JP 7386738 B2 JP7386738 B2 JP 7386738B2 JP 2020049569 A JP2020049569 A JP 2020049569A JP 2020049569 A JP2020049569 A JP 2020049569A JP 7386738 B2 JP7386738 B2 JP 7386738B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- opening
- gas
- substrate
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 100
- 238000000034 method Methods 0.000 title claims description 70
- 238000010926 purge Methods 0.000 claims description 83
- 238000009792 diffusion process Methods 0.000 claims description 42
- 230000000903 blocking effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 199
- 238000010586 diagram Methods 0.000 description 18
- 239000002245 particle Substances 0.000 description 11
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020049569A JP7386738B2 (ja) | 2020-03-19 | 2020-03-19 | 基板搬送方法および基板処理装置 |
TW110108059A TW202201612A (zh) | 2020-03-19 | 2021-03-08 | 基板搬運方法及基板處理裝置 |
CN202110264462.4A CN113496915A (zh) | 2020-03-19 | 2021-03-11 | 基片输送方法和基片处理装置 |
KR1020210032648A KR102517603B1 (ko) | 2020-03-19 | 2021-03-12 | 기판 반송 방법 및 기판 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020049569A JP7386738B2 (ja) | 2020-03-19 | 2020-03-19 | 基板搬送方法および基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021150514A JP2021150514A (ja) | 2021-09-27 |
JP7386738B2 true JP7386738B2 (ja) | 2023-11-27 |
Family
ID=77849468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020049569A Active JP7386738B2 (ja) | 2020-03-19 | 2020-03-19 | 基板搬送方法および基板処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7386738B2 (zh) |
KR (1) | KR102517603B1 (zh) |
CN (1) | CN113496915A (zh) |
TW (1) | TW202201612A (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20240053041A (ko) | 2021-09-15 | 2024-04-23 | 스미토모 덴키 고교 가부시키가이샤 | 초전도 선재 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000232071A (ja) | 1999-02-09 | 2000-08-22 | Kokusai Electric Co Ltd | 基板処理方法および基板処理装置 |
JP2000306974A (ja) | 1999-04-20 | 2000-11-02 | Ebara Corp | 半導体処理装置 |
JP2005527120A (ja) | 2002-05-21 | 2005-09-08 | エーエスエム アメリカ インコーポレイテッド | 半導体処理ツール内チャンバ間の相互汚染の減少 |
JP2007142284A (ja) | 2005-11-21 | 2007-06-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2016011719A (ja) | 2014-06-30 | 2016-01-21 | 入江工研株式会社 | ゲートバルブ |
JP2017128796A (ja) | 2016-01-15 | 2017-07-27 | 東京エレクトロン株式会社 | 真空処理装置及び真空処理装置の運転方法。 |
US20200058529A1 (en) | 2018-08-15 | 2020-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconuctor device manufacturing system |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100271758B1 (ko) * | 1997-06-25 | 2001-01-15 | 윤종용 | 반도체장치 제조설비 및 이의 구동방법 |
JP2004096089A (ja) * | 2002-07-09 | 2004-03-25 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
JP4816790B2 (ja) | 2003-06-02 | 2011-11-16 | 東京エレクトロン株式会社 | 基板処理装置及び基板搬送方法 |
JP4695936B2 (ja) * | 2005-07-15 | 2011-06-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP5028193B2 (ja) * | 2007-09-05 | 2012-09-19 | 株式会社日立ハイテクノロジーズ | 半導体製造装置における被処理体の搬送方法 |
JP2009062604A (ja) * | 2007-09-10 | 2009-03-26 | Tokyo Electron Ltd | 真空処理システムおよび基板搬送方法 |
-
2020
- 2020-03-19 JP JP2020049569A patent/JP7386738B2/ja active Active
-
2021
- 2021-03-08 TW TW110108059A patent/TW202201612A/zh unknown
- 2021-03-11 CN CN202110264462.4A patent/CN113496915A/zh active Pending
- 2021-03-12 KR KR1020210032648A patent/KR102517603B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000232071A (ja) | 1999-02-09 | 2000-08-22 | Kokusai Electric Co Ltd | 基板処理方法および基板処理装置 |
JP2000306974A (ja) | 1999-04-20 | 2000-11-02 | Ebara Corp | 半導体処理装置 |
JP2005527120A (ja) | 2002-05-21 | 2005-09-08 | エーエスエム アメリカ インコーポレイテッド | 半導体処理ツール内チャンバ間の相互汚染の減少 |
JP2007142284A (ja) | 2005-11-21 | 2007-06-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2016011719A (ja) | 2014-06-30 | 2016-01-21 | 入江工研株式会社 | ゲートバルブ |
JP2017128796A (ja) | 2016-01-15 | 2017-07-27 | 東京エレクトロン株式会社 | 真空処理装置及び真空処理装置の運転方法。 |
US20200058529A1 (en) | 2018-08-15 | 2020-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconuctor device manufacturing system |
Also Published As
Publication number | Publication date |
---|---|
KR102517603B1 (ko) | 2023-04-03 |
TW202201612A (zh) | 2022-01-01 |
CN113496915A (zh) | 2021-10-12 |
KR20210117943A (ko) | 2021-09-29 |
JP2021150514A (ja) | 2021-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI544168B (zh) | A gate valve device, a substrate processing device, and a substrate processing method | |
JP5048352B2 (ja) | 基板処理方法及び基板処理装置 | |
JP4985031B2 (ja) | 真空処理装置、真空処理装置の運転方法及び記憶媒体 | |
JP6240695B2 (ja) | 基板処理装置、半導体装置の製造方法及びプログラム | |
US8172949B2 (en) | Substrate processing apparatus, program for performing operation and control method thereof, and computer readable storage medium storing the program | |
JP4642619B2 (ja) | 基板処理システム及び方法 | |
KR100810804B1 (ko) | 진공 처리 장치, 진공 예비실의 배기 방법 및 진공 예비실의 승압 방법 | |
JP5208948B2 (ja) | 真空処理システム | |
JP2005072525A (ja) | 基板加熱装置及びマルチチャンバー基板処理装置 | |
JP2007035874A (ja) | 真空処理システム | |
JP2008041896A (ja) | 基板検知機構およびそれを用いた基板処理装置 | |
JP4535967B2 (ja) | 基板処理装置 | |
JP7386738B2 (ja) | 基板搬送方法および基板処理装置 | |
JP2009158627A (ja) | 真空装置、真空処理システムおよび真空室の圧力制御方法 | |
JP2008251991A (ja) | ロードロック装置および昇圧方法 | |
JP7039632B2 (ja) | 基板処理装置、基板処理方法およびプログラム | |
KR20130016359A (ko) | 기판 처리 방법 및 기판 처리 시스템 | |
KR20080054759A (ko) | 기판 처리 장치 및 방법 | |
JP6417916B2 (ja) | 基板搬送方法、基板処理装置、及び記憶媒体 | |
KR20230134978A (ko) | 기판 처리 방법 및 기판 처리 장치 | |
KR20230067945A (ko) | 기판처리장치 및 이를 이용한 기판처리방법 | |
JP2009253217A (ja) | 基板処理装置 | |
KR20210089085A (ko) | 수증기 처리 장치와 수증기 처리 방법, 기판 처리 시스템, 및 드라이 에칭 방법 | |
WO2014041656A1 (ja) | 真空処理装置 | |
JPH10214874A (ja) | 基板の処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221121 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230914 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231017 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231114 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7386738 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |