JP7386738B2 - Substrate transport method and substrate processing equipment - Google Patents

Description

The present disclosure relates to a substrate transport method and a substrate processing apparatus.

In a substrate processing apparatus, when substrates are carried in and out while maintained in a reduced pressure atmosphere between a processing chamber where substrates are processed and a transfer chamber where substrates are transferred to the processing chamber, the process chamber and the transfer chamber are This will open the gate valve provided between the chambers. At this time, in order to prevent dust and particles from entering the transfer chamber from the processing chamber, it has been proposed to open the gate valve after applying positive pressure to the transfer chamber side.

Japanese Patent Application Publication No. 2004-96089

The present disclosure can suppress the diffusion of contaminants such as corrosive gases and reaction products from the processing chamber to the transfer chamber when the gate valve is opened, suppress the flying up of particles within the processing chamber, and reduce the amount of particles remaining in the gas diffusion chamber. Provided are a substrate transport method and a substrate processing apparatus that can suppress gas intrusion.

A substrate transport method according to one aspect of the present disclosure is a substrate transport method in a substrate processing apparatus, and the substrate processing apparatus includes a first opening for carrying in and out a substrate to be processed, and a shower provided with a plurality of through holes. a processing container having a first gas supply unit having a plate and having a gas diffusion chamber therein; a first exhaust system; a second opening for loading and unloading a substrate; and a second gas supply. a vacuum vessel having a first opening and a second exhaust system; a switching device having a shield interposed between the processing vessel and the vacuum vessel and communicating or blocking the first opening and the second opening; , the opening pressure is the pressure that permits opening of the switchgear, and the processing gas is supplied from the first gas supply section to the inside of the processing container with the switchgear being shut off, and the processing gas is provided inside the processing container. The step of processing the substrate, stopping the supply of the processing gas, and supplying the first purge gas at the first gas flow rate from the first gas supply unit inside the processing container while using the first exhaust system to perform the first purge gas. a step of exhausting the first purge gas and adjusting the first pressure inside the processing container to an open pressure; and supplying the second purge gas at a second gas flow rate from a second gas supply section inside the vacuum container. while exhausting the second purge gas by the second exhaust system, and either a second pressure inside the switchgear on the vacuum vessel side of the shield or a third pressure inside the vacuum vessel. or adjusting both to an open pressure, and when the first pressure and the second pressure or the third pressure become equal, the second gas flow rate is adjusted to a third gas flow rate that is greater than the first gas flow rate. a step of changing the gas flow rate to a gas flow rate of has.

According to the present disclosure, when the gate valve is opened, it is possible to suppress the diffusion of contaminants such as corrosive gases and reaction products from the processing chamber to the transfer chamber, and to suppress the flying up of particles within the processing chamber, and also to the gas diffusion chamber. The intrusion of residual gas can be suppressed.

FIG. 1 is a diagram illustrating an example of a substrate processing apparatus according to an embodiment of the present disclosure. FIG. 2 is a diagram showing an example of a cross section of the substrate processing apparatus in this embodiment. FIG. 3 is a diagram showing an example of the flow of purge gas in the process chamber and the transfer chamber with the gate valve closed in this embodiment. FIG. 4 is a diagram showing an example of the flow rate of purge gas in the state of FIG. 3. FIG. 5 is a diagram showing an example of the pressure in each space in the state of FIG. 3. FIG. 6 is a diagram showing an example of the flow of purge gas in the process chamber and the transfer chamber with the gate valve opened in this embodiment. FIG. 7 is a diagram showing an example of the flow rate of purge gas in the state of FIG. 6. FIG. 8 is a diagram showing an example of the pressure in each space in the state of FIG. 6. FIG. 9 is a sequence diagram showing an example of the transport process in this embodiment.

Embodiments of the disclosed substrate transport method and substrate processing apparatus will be described in detail below based on the drawings. Note that the disclosed technology is not limited to the following embodiments.

In a substrate processing apparatus, when opening the gate valve installed between the processing chamber and the transfer chamber with positive pressure on the transfer chamber side, if the pressure difference between the processing chamber and the transfer chamber is large, turbulence due to the pressure difference may occur. This causes particles attached to the processing chamber or transfer chamber to be thrown up, causing product defects. In addition, when the transfer chamber side is under positive pressure, corrosive residual gas and products from substrate processing will back-diffuse into the gas diffusion chamber that supplies the processing gas in the processing chamber. It can become contaminated and become a new source of particles. Therefore, it is expected to suppress the flying up of particles when the gate valve is opened and to suppress the intrusion of residual gas into the gas diffusion chamber.

[Configuration of substrate processing apparatus 100]
FIG. 1 is a diagram illustrating an example of a substrate processing apparatus according to an embodiment of the present disclosure. A substrate processing apparatus 100 shown in FIG. 1 is a multi-chamber type apparatus for performing an etching process on a glass substrate (hereinafter simply referred to as "substrate") PL for a flat panel display (FPD). Examples of the FPD include a liquid crystal display (LCD), a light emitting diode (LED) display, an electroluminescence (EL) display, a fluorescent display (VFD), and a plasma display panel (PDP).

As shown in FIG. 1, the substrate processing apparatus 100 has a transfer chamber 1 disposed in the center thereof. Arranged around the transfer chamber 1 are a load lock chamber 7, which is a vacuum preliminary chamber, and a plurality of (five in this example) process chambers 8a to 8e, which are vacuum processing chambers. The process chambers 8a to 8e can be configured as a film forming chamber, an etching chamber, an ashing chamber, or the like. Note that the process chambers 8a to 8e are examples of processing containers. Further, the transfer chamber 1 of this example has a shape in which a total of six chambers including a load lock chamber 7 and process chambers 8a to 8e are arranged around it, for example, a substantially hexagonal shape in plan view, and the top and bottom surfaces are aligned as a whole. Although the chamber is configured in an octahedral shape, the number of chambers arranged and the overall shape are not limited to this.

A gate valve 15 is provided between the transfer chamber 1 and each of the process chambers 8a to 8e, which airtightly seals the space therebetween and is configured to be openable and closable. Further, a gate valve 16 having a similar function is provided between the transfer chamber 1 and the load-lock chamber 7 and at an opening that communicates the load-lock chamber 7 with the outside atmosphere.

Three cassettes 9 that accommodate substrates PL are arranged outside the load lock chamber 7. These cassettes 9 accommodate, for example, unprocessed substrates and processed substrates. A substrate transport device 90 is arranged between these three cassettes 9. The substrate transport device 90 has a slide arm section on which the substrate PL is placed, and a base section that supports the slide arm section so that the slide arm section can move forward and backward and rotate.

The transport chamber 1 has a transport device 13 installed therein for transporting the substrate PL. The transfer chamber 1 is configured such that its internal space can be maintained in a predetermined reduced pressure atmosphere (for example, under a vacuum environment). Note that the transfer chamber 1 is an example of a vacuum container (transfer chamber).

In the transfer chamber 1, the transfer device 13 transfers the substrate PL between the load lock chamber 7 and the process chambers 8a to 8e. The transport device 13 includes a base, a lower hand base 13b, and an upper hand base 13d. The base portion is provided approximately at the center of the transfer chamber 1, and includes a drive mechanism portion that raises and lowers and rotates the transfer device 13, and a driven portion that is provided so as to be able to rotate and move up and down with respect to the drive mechanism portion. This driven portion is provided with a lower hand base 13b and an upper hand base 13d.

The driven section includes an actuator, a guide section, and a slider for moving the lower hand base 13b and the upper hand base 13d back and forth relative to the driven section. A lower hand base 13b and an upper hand base 13d are fixed to each slider. By driving either slider, the lower hand base 13b or the upper hand base 13d is moved forward or backward. The lower hand base 13b and the upper hand base 13d are provided with a lower hand 13c and an upper hand 13e (for example, four fork hands in FIG. 1), respectively. By driving the drive mechanism section, the driven section is rotated and raised and lowered in the internal space of the transfer chamber 1, and by moving the lower hand base 13b or the upper hand base 13d forward and backward, the movement is made between the load lock chamber 7 and the process chambers 8a to 8e. The substrate PL is transferred at the step.

Like the transfer chamber 1, the load lock chamber 7 and the process chambers 8a to 8e are configured so that their respective internal spaces can be maintained at a predetermined reduced pressure atmosphere. Inside the process chambers 8a to 8e, processes such as film formation, plasma etching, or ashing are performed. Process chambers 8a to 8e may be configured in the same way, or may be configured differently depending on the processing content.

The substrate processing apparatus 100 includes a control device 10 . The control device 10 is, for example, a computer, and includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, and the like. The CPU operates based on a program stored in the ROM or auxiliary storage device, and controls the operation of each component of the substrate processing apparatus 100.

Next, each section in the cross section of the substrate processing apparatus 100 will be explained using FIG. 2. In the following description, process chambers 8a to 8e will be referred to as process chamber 8 without distinction. FIG. 2 is a diagram showing an example of a cross section of the substrate processing apparatus in this embodiment. As shown in FIG. 2, the process chamber 8 has a first opening 20, a first gas supply section 21, a first exhaust system 26, a mounting table 27, and a first pressure gauge 29. . Note that the process chamber 8 is also called a process module (PM).

The first opening 20 is an opening through which the substrate PL to be processed is carried in and out of the transfer chamber 1 via the gate valve 15 . The first gas supply section 21 has a shower plate 22 and a gas diffusion chamber 23. The shower plate 22 is provided with a plurality of through holes 22a, and the gas diffusion chamber 23 and the processing space 28 in the process chamber 8 are in fluid communication. A gas source 24 is connected to the gas diffusion chamber 23 via a gas supply pipe 24a, and a processing gas and a first purge gas are supplied thereto. As the processing gas, various gases such as halogen-containing gas such as Cl2, rare gas, H2 gas, and O2 gas can be used. Further, as the first purge gas, for example, Ar gas, O2 gas, N2 gas, etc. can be used. Further, a diffusion chamber pressure gauge 25 is provided in the gas diffusion chamber 23, and the pressure in the gas diffusion chamber 23 can be measured. Note that the pressure in the gas diffusion chamber 23 is determined based on the gas flow rate of the gas supplied to the gas diffusion chamber 23, the conductance of the shower plate 22, and the first pressure of the processing space 28, which will be described later, without providing the diffusion chamber pressure gauge 25. It may be calculated from the pressure obtained from the pressure gauge 29.

First evacuation system 26 includes a vacuum pump that evacuates process gas and purge gas within process space 28 . As the vacuum pump, for example, a turbo molecular pump (TMP) can be used. The first exhaust system 26 can reduce the pressure of the processing space 28 within the process chamber 8 to a desired degree of vacuum. Further, the first exhaust system 26 includes an APC (Auto Pressure Controller) valve and automatically controls the pressure in the process chamber 8 .

The mounting table 27 places the substrate PL to be processed. The mounting table 27 has a plurality of thin rod-shaped lift pins (not shown) that can freely protrude from the upper surface. The mounting table 27 transfers the substrate PL to and from the transfer device 13 of the transfer chamber 1 by lifting the substrate PL using lift pins. The first pressure gauge 29 measures the pressure in the processing space 28 within the process chamber 8 . The first pressure gauge 29 outputs measured pressure data to the control device 10.

The gate valve 15 includes a valve body 30, a housing 31, and a second pressure gauge 32. The valve body 30 is a blocking body that communicates or blocks the first opening 20 of the process chamber 8 and the second opening 40 of the transfer chamber 1 . The housing 31 accommodates the valve body 30. The second pressure gauge 32 measures the pressure in the space 33 within the housing 31 . The second pressure gauge 32 outputs measured pressure data to the control device 10. The space 33 communicates with a space 45 inside the transfer chamber 1 via a second opening 40 of the transfer chamber 1 . Note that the gate valve 15 is an example of an opening/closing device. Further, the gate valve 16 also has a similar structure.

The transfer chamber 1 has a transfer device 13, a second opening 40, a second gas supply section 41, a second exhaust system 42, a third pressure gauge 43, and a third opening 44. . Note that the transfer chamber 1 is also called a transfer module (TM).

The transfer device 13 transfers the substrate PL between the load lock chamber 7 and the process chamber 8 as described above. The second opening 40 is an opening through which the substrate PL to be processed is carried in and out of the process chamber 8 via the gate valve 15. The second gas supply unit 41 has a gas source 46 that supplies a second purge gas and is connected to the transfer chamber 1 via a gas supply pipe 41a. The second gas supply section 41 supplies a second purge gas to the space 45 within the transfer chamber 1 . As the second purge gas, for example, N2 gas, Ar gas, etc. can be used.

The second evacuation system 42 has a vacuum pump that evacuates the purge gas within the space 45 . As the vacuum pump, for example, a mechanical booster pump (MBP) or a diffusion pump (DP) can be used. The second exhaust system 42 can reduce the pressure of the space 45 within the transfer chamber 1 to a desired degree of vacuum. Further, the second exhaust system 42 includes, for example, an isolation valve to shut off or open exhaust from the second exhaust system 42. The third pressure gauge 43 measures the pressure in the space 45 within the transfer chamber 1 . The third pressure gauge 43 outputs measured pressure data to the control device 10.

The load lock chamber 7 has a stage 50, a fourth opening 51, a fifth opening 52, and a third exhaust system 53. The stage 50 is a platform for transferring the substrate PL between the transfer device 13 of the transfer chamber 1 and the slide arm section of the substrate transfer device 90. The fourth opening 51 is an opening through which the substrate PL is carried in and out of the transfer chamber 1 via the gate valve 16. The fifth opening 52 is an opening through which the substrate PL is carried in and out of the substrate transfer device 90 via the gate valve 16. The third evacuation system 53 has a vacuum pump that evacuates the space 54 . As the vacuum pump, for example, a mechanical booster pump (MBP) or a diffusion pump (DP) can be used. The third exhaust system 53 can reduce the pressure of the space 54 inside the load lock chamber 7 to a desired degree of vacuum.

[Flow of purge gas]
Next, the flow of purge gas in each open/closed state of the gate valve 15 will be explained using FIGS. 3 to 8. FIG. 3 is a diagram showing an example of the flow of purge gas in the process chamber and the transfer chamber with the gate valve closed in this embodiment. In the following description, the flow of the purge gas supplied to the processing space 28 of the process chamber 8 is expressed as a flow F1, and the flow of the purge gas supplied to the space 45 of the transfer chamber 1 is expressed as flows F2 and F3. Further, the first purge gas is referred to as purge gas G1, and the second purge gas is referred to as purge gas G2. Furthermore, the pressure in the gas diffusion chamber 23 is expressed as pressure P0, the pressure in the processing space 28 is expressed as pressure P1 (first pressure), the pressure in the space 33 is expressed as pressure P2 (second pressure), and the pressure in the space 45 is expressed as pressure P1 (first pressure). The pressure is expressed as pressure P3 (third pressure). Although illustrated in a simplified manner in FIG. 3, in reality, the flow F1 is the flow of the purge gas G1 supplied to the processing space 28 via the gas supply pipe 24a, and the flows F2 and F3 are the flow of the purge gas G1 supplied to the processing space 28 via the gas supply pipe 24a. This is the flow of purge gas G2 supplied to the space 45 via the pipe 41a.

As shown in FIG. 3, the purge gas G1 supplied to the process chamber 8 in the flow F1 is supplied to the processing space 28 via the gas diffusion chamber 23 and the through hole 22a of the shower plate 22, and is supplied to the processing space 28 through the first exhaust system 26. Exhausted by. The purge gas G2 supplied to the transfer chamber 1 in flow F2 is supplied to the space 45 and exhausted by the second exhaust system 42. That is, when the gate valve 15 is closed, the first opening 20 is closed by the valve body 30, so the flow of the purge gas G1 in the process chamber 8 and the flow of the purge gas G2 in the transfer chamber 1 are independent of each other. are doing.

In the state of FIG. 3, the flow rate of each flow and the pressure value of each space when the pressures P0 to P3 in each space are stabilized are shown in FIGS. 4 and 5. FIG. 4 is a diagram showing an example of the flow rate of purge gas in the state of FIG. 3. FIG. 5 is a diagram showing an example of the pressure in each space in the state of FIG. 3. As shown in FIGS. 4 and 5, in the state of FIG. 3, the flow F1 is such that the purge gas G1 is supplied at a flow rate of 2500 sccm, the pressure P0 in the gas diffusion chamber 23 is 1000 mTorr, and the pressure P1 in the processing space 28 is 30 mTorr. There is. At this time, the pressure P1 in the processing space 28 is adjusted to 30 mTorr by the APC valve of the first exhaust system 26. That is, the control device 10 monitors the pressure P1 in the processing space 28 using the first pressure gauge 29, and the APC valve automatically controls the pressure P1 in the processing space 28.

Further, in the flow F2, the purge gas G2 is supplied at a flow rate of 300 sccm, the pressure P2 in the space 33 is 30 mTorr, and the pressure P3 in the space 45 is 30 mTorr. At this time, the pressure P2 in the space 33 and the pressure P3 in the space 45 are controlled by the second gas supply section 41 adjusting the flow rate of the flow F2. Note that the flow F2 and the flow F3 can be switched in the second gas supply section 41. In the second gas supply section 41, the flow rates are set respectively, with flow F2 corresponding to "Slow" (setting for low flow rate) and flow F3 corresponding to "Busy" (setting for high flow rate).

Next, the state immediately after opening the gate valve 15, changing the flow from F2 to F3, and shutting off the exhaust in the second exhaust system 42 will be described using FIG. 6. FIG. 6 is a diagram showing an example of the flow of purge gas in the process chamber and the transfer chamber with the gate valve opened in this embodiment.

As shown in FIG. 6, the purge gas G1 supplied to the process chamber 8 in the flow F1 is supplied to the processing space 28 through the gas diffusion chamber 23 and the through hole 22a of the shower plate 22, and is supplied to the processing space 28 through the first exhaust system 26. Exhausted by. The purge gas G2 supplied to the transfer chamber 1 in the flow F3 is supplied to the space 45, and flows into the processing space 28 through the second opening 40, the space 33, and the first opening 20 as shown in the flow F4. That is, when the gate valve 15 is open, the second exhaust system 42 is shut off, so the purge gases G1 and G2 are exhausted by the first exhaust system 26.

The flow rate of each flow and the pressure value of each space in the state of FIG. 6 are shown in FIGS. 7 and 8. FIG. 7 is a diagram showing an example of the flow rate of purge gas in the state of FIG. 6. FIG. 8 is a diagram showing an example of the pressure in each space in the state of FIG. 6. As shown in FIGS. 7 and 8, in the state of FIG. 6, the flow F1 is such that the purge gas G1 is supplied at a flow rate of 2500 sccm, the pressure P0 in the gas diffusion chamber 23 is 1000 mTorr, and the pressure P1 in the processing space 28 is 30 mTorr. There is. Further, in the flow F3, the purge gas G2 is supplied at a flow rate of 3000 sccm, the pressure P2 in the space 33 is 32 mTorr, and the pressure P3 in the space 45 is 35 mTorr. At this time, the pressure P1 in the processing space 28 is adjusted to 30 mTorr by the APC valve of the first exhaust system 26. That is, the control device 10 monitors the pressure P1 in the processing space 28 and the pressure P2 in the space 33 using the first pressure gauge 29 and the second pressure gauge 32, and the APC valve monitors the pressure P1 in the processing space 28. Automatically control. Furthermore, the pressure P2 in the space 33 and the pressure P3 in the space 45 are controlled by adjusting the flow rate of the flow F3 by the second gas supply section 41 and adjusting the exhaust amount by the APC valve of the first exhaust system 26. There is.

In the state of FIG. 6, the relationship between the pressures P1 to P3 in each space immediately after the gate valve 15 is opened has a pressure gradient such as P3>P2>P1. Therefore, when the gate valve 15 is opened, the diffusion of contaminants such as corrosive gases and reaction products from the processing space 28 to the space 45 can be suppressed. In addition, since the pressure P1 and the pressure P2 are adjusted to the same pressure in advance when the gate valve 15 is opened, by changing the flow rate of the purge gas G2 to a larger flow rate than the purge gas G1 when the gate valve 15 is opened, the pressure is increased. Even if P2 increases, the pressure difference between pressure P1 and pressure P2 can be kept small. Therefore, it is possible to avoid a sudden inflow of gas into the processing space 28, and as a result, it is possible to suppress particles from flying up. Further, the relationship between the pressure P0 in the gas diffusion chamber 23 and the pressure P1 in the processing space 28 is P0>>P1. Therefore, it is possible to suppress the processing gas (residual gas) remaining in the processing space 28 from entering the gas diffusion chamber 23 .

[Substrate transport method]
Next, a substrate transport method according to this embodiment will be explained. FIG. 9 is a sequence diagram showing an example of the transport process in this embodiment. In FIG. 9, a method for transporting a substrate between the process chamber 8 and the transport chamber 1 in the substrate processing apparatus 100 will be described. Further, FIG. 9 shows the pressures P0 to P3, differential pressure #1=(P0-P1) and differential pressure #2=(P2-P1) in each step, and the flow rates of purge gases G1 and G2.

First, in a state where the gate valve 15 is shut off, the control device 10 supplies the processing gas from the first gas supply section 21 to the processing space 28 of the process chamber 8, and performs processing on the substrate PL ( Step S1). At this time, the processing gas is supplied to the gas diffusion chamber 23, and the pressure P0 of the gas diffusion chamber 23 is assumed to be, for example, 1000 mTorr. Note that the pressure P0 in step S1 varies depending on the content of the process, and is, for example, about 500 mTorr to 1500 mTorr. Further, the pressure P1 in the processing space 28 is 15 mTorr, and the differential pressure #1 is 985 mTorr. Note that in step S1, since the substrate PL is being processed, the flow rate of the purge gas G1 is 0 sccm.

On the other hand, the control device 10 exhausts the purge gas G2 with the second exhaust system 42 while supplying the purge gas G2 at the second gas flow rate (F2) from the second gas supply section 41 inside the transfer chamber 1. . The control device 10 adjusts the pressure P2 (second pressure) in the space 33 and the pressure P3 (third pressure) in the space 45 to respective opening pressures that permit opening of the gate valve 15. Here, the flow rate of the purge gas G2 (second gas flow rate (F2)) is, for example, 300 sccm, and the opening pressure is 30 mTorr. At this time, differential pressure #2 is 15 mTorr.

When the processing on the substrate PL is completed, the control device 10 stops supplying the processing gas to the process chamber 8. The control device 10 exhausts the purge gas G1 through the first exhaust system 26 while supplying the purge gas G1 from the first gas supply unit 21 at a first gas flow rate (F1), and exhausts the inside of the process chamber 8, that is, the processing space. The pressure P1 (first pressure) of No. 28 is adjusted to the opening pressure (step S2). Here, the flow rate of the purge gas G1 (first gas flow rate (F1)) is, for example, 2500 sccm, and the opening pressure is 30 mTorr, as in the case of the pressures P2 and P3. Further, the pressure P2 in the space 33 and the pressure P3 in the space 45 in step S2 are adjusted to 30 mTorr successively from step S1. That is, the control device 10 adjusts the pressure P1 in the processing space 28 to be equal to the pressure P2 in the space 33 and the pressure P3 in the space 45. Note that the control device 10 may measure the pressure P1 in the processing space 28 and the pressure P2 in the space 33, and adjust the pressure P1 in the processing space 28 to be equal to the pressure P2 in the space 33. Alternatively, the pressure P1 in the processing space 28 and the pressure P3 in the space 45 may be measured and adjusted so that the pressure P1 in the processing space 28 is equal to the pressure P3 in the space 45.

The control device 10 determines whether the pressure P1 in the processing space 28 is equal to the pressure P2 in the space 33 and the pressure P3 in the space 45. Note that the control device 10 may determine whether the pressure P1 and the pressure P2, or the pressure P1 and the pressure P3 are equal. When the control device 10 determines that the pressure P1 in the processing space 28 is equal to the pressure P2 in the space 33 and the pressure P3 in the space 45, the control device 10 changes the flow rate of the purge gas G2 to 3000 sccm and shuts off the second exhaust system 42. Then, the gate valve 15 is opened (step S3).

That is, the control device 10 changes the second gas flow rate (F2) to the first pressure when the first pressure (P1) and the second pressure (P2) or the third pressure (P3) become equal. At the same time, the second exhaust system 42 is shut off and the gate valve 15 is opened. Note that the first gas flow rate (F1) is 2500 sccm, the second gas flow rate (F2) is 300 sccm, and the third gas flow rate (F3) is 3000 sccm. On the other hand, if the control device 10 determines that the pressure P1 in the processing space 28 is not equal to the pressure P2 in the space 33 and the pressure P3 in the space 45, the control device 10 continues to adjust the pressures P1 to P3 in each space and repeats the determination. .

Immediately after the gate valve 15 is opened, the pressure in each space is such that the pressure P0 in the gas diffusion chamber 23 is 1000 mTorr, the pressure P1 in the processing space 28 is 30 mTorr, the pressure P2 in the space 33 is 32 mTorr, and the pressure P0 in the gas diffusion chamber 23 is 1000 mTorr. The pressure P3 is 35 mTorr. That is, as the flow rate of the purge gas G2 increases from 300 sccm to 3000 sccm, the pressure P3 in the space 45 increases, and the pressure gradient in each space becomes P3>P2>P1. Further, differential pressure #1 is 970 mTorr, and differential pressure #2 is 2 mTorr. At this time, the pressure difference between the pressure P1 in the processing space 28 and the pressure P3 in the space 45 is preferably within 5 mTorr.

After the gate valve 15 is opened, the control device 10 continues to adjust the APC valve of the first exhaust system 26 so that the pressure P1 in the processing space 28 becomes the opening pressure of 30 mTorr (step S4). At this time, the pressure in each space is such that the pressure P0 in the gas diffusion chamber 23 is 1000 mTorr, the pressure P1 in the processing space 28 is 30 mTorr, the pressure P2 in the space 33 is 30 mTorr, and the pressure P3 in the space 45 is 30 mTorr. be. The pressures P2 and P3, which have temporarily increased immediately after the gate valve is opened, shift to steady pressures in step S4. Further, differential pressure #1 is 970 mTorr, and differential pressure #2 is 0 mTorr. The flow rate of the purge gas G1 (first gas flow rate (F1)) is 2500 sccm, and the flow rate of the purge gas G2 (third gas flow rate (F3)) is 3000 sccm.

The control device 10 uses the transfer device 13 to transfer the substrate PL placed on the mounting table 27 of the process chamber 8 to the transfer chamber 1 through the first opening 20 and the second opening 40 and to carry it out. (Step S5). The pressure in each space and the flow rate of the purge gas at this time are the same as in step S4.

When the transfer of the substrate PL from the process chamber 8 is completed, the control device 10 closes the gate valve 15, changes the flow rate of the purge gas G2 to 300 sccm, and opens the second exhaust system 42 (step S6). At this time, the pressure in each space is such that the pressure P0 in the gas diffusion chamber 23 is 1000 mTorr, the pressure P1 in the processing space 28 is 30 mTorr, the pressure P2 in the space 33 is 30 mTorr, and the pressure P3 in the space 45 is 30 mTorr. be. Further, differential pressure #1 is 970 mTorr, and differential pressure #2 is 0 mTorr. The flow rate of the purge gas G1 (first gas flow rate (F1)) is 2500 sccm, and the flow rate of the purge gas G2 (second gas flow rate (F2)) is 300 sccm.

When the control device 10 closes the gate valve 15, it transfers the substrate PL on the transfer device 13 to the load lock chamber 7, receives the next substrate PL from the load lock chamber 7, and prepares for loading (step S7). The pressure in each space and the flow rate of the purge gas at this time are the same as in step S6.

When preparations for carrying in the next substrate PL are completed, the control device 10 determines whether the pressure P1 in the processing space 28 is equal to the pressure P2 in the space 33 and the pressure P3 in the space 45, similarly to step S3. Note that the control device 10 may determine whether the pressure P1 and the pressure P2, or the pressure P1 and the pressure P3 are equal. When the control device 10 determines that the pressure P1 in the processing space 28 is equal to the pressure P2 in the space 33 and the pressure P3 in the space 45, the control device 10 changes the flow rate of the purge gas G2 to 3000 sccm and shuts off the second exhaust system 42. Then, the gate valve 15 is opened (step S8).

On the other hand, if the control device 10 determines that the pressure P1 in the processing space 28 is not equal to the pressure P2 in the space 33 and the pressure P3 in the space 45, the control device 10 continues to adjust the pressures P1 to P3 in each space and repeats the determination. . Immediately after the gate valve 15 is opened, the pressure in each space and the flow rate of the purge gas are the same as in step S3.

Similarly to step S4, the control device 10 continues to adjust the APC valve of the first exhaust system 26 so that the pressure P1 in the processing space 28 becomes the opening pressure of 30 mTorr even after the gate valve 15 is opened. Step S9). The pressure in each space and the flow rate of the purge gas at this time are the same as in step S4.

The control device 10 carries the substrate PL placed on the transfer device 13 in the transfer chamber 1 into the process chamber 8 through the second opening 40 and the first opening 20, and places it on the mounting table 27 ( Step S10). The pressure in each space and the flow rate of the purge gas at this time are the same as in step S9.

When the next substrate is carried into the process chamber 8, the control device 10 closes the gate valve 15, changes the flow rate of the purge gas G2 to 300 sccm, and opens the second exhaust system 42 (step S11). The pressure in each space and the flow rate of the purge gas at this time are the same as in step S6.

When the control device 10 closes the gate valve 15, it stops supplying the purge gas G1, returns to step S1, and processes the next substrate PL. In this way, in this embodiment, the flow rate of the purge gas G2 in the transfer chamber 1 is increased when the gate valve 15 is opened while adjusting the pressures in the process chamber 8 and the transfer chamber 1 to be equal. Immediately after opening 15, the pressure on the transfer chamber 1 side automatically becomes slightly positive. Furthermore, since the purge gas G1 is supplied to the gas diffusion chamber 23, corrosive gas is prevented from entering the gas diffusion chamber 23.

As described above, according to the present embodiment, the substrate processing apparatus 100 includes a processing container (process chamber 8), a vacuum container (transfer chamber 1), an opening/closing device (gate valve 15), and a control device that executes a substrate processing method. 10. The processing container has a first opening 20 through which the substrate PL to be processed is carried in and out, and a shower plate 22 provided with a plurality of through holes 22a, and has a first gas diffusion chamber 23 provided therein. It has a supply section 21 and a first exhaust system 26. The vacuum container has a second opening 40 through which the substrate PL is carried in and out, a second gas supply section 41, and a second exhaust system 42. The opening/closing device has a shielding body (valve body 30) that is interposed between the processing container and the vacuum container and communicates or blocks the first opening 20 and the second opening 40. In the substrate processing method, the pressure that permits the opening of the switchgear is set as the opening pressure, and the processing gas is supplied from the first gas supply section 21 to the inside of the processing container while the switchgear is shut off. A step of processing the arranged substrate PL, stopping the supply of the processing gas, and supplying the first purge gas at the first gas flow rate from the first gas supply section 21 inside the processing container. A step of exhausting the first purge gas by the exhaust system 26 and adjusting the first pressure inside the processing container to the opening pressure, and a step of adjusting the second gas flow rate from the second gas supply section 41 inside the vacuum container. While supplying the second purge gas, the second purge gas is exhausted by the second exhaust system 42, and the second pressure inside the switchgear on the vacuum vessel side of the shield and the second pressure inside the vacuum vessel are adjusting one or both of the third pressures to an open pressure; and when the first pressure and the second pressure or the third pressure become equal, the second gas flow rate is adjusted to the first pressure. The first opening 20 and the second opening 40 are changed to a third gas flow rate larger than the first opening 20 and the second opening 40, and the second exhaust system 42 is shut off and the switchgear is opened. and then transferring from the processing container to the vacuum container. As a result, particles can be prevented from flying up when the gate valve 15 is opened, and residual gas can be prevented from entering the gas diffusion chamber 23.

Further, according to the present embodiment, the first pressure is measured by the first pressure gauge 29 provided in the processing container, and the second pressure is measured by the second pressure gauge 32 provided in the opening/closing device. The third pressure is measured by a third pressure gauge 43 provided in the vacuum container. As a result, it can be determined whether the pressures in the processing space 28 and the space 33 or 45 are equal.

Further, according to the present embodiment, the second pressure is applied to the casing in the opening/closing device which is the gate valve 15 which is composed of the valve body 30 which is a shielding body and the casing 31 which houses the valve body 30. The second pressure gauge 32 attached to the pressure gauge 31 measures the pressure. As a result, the pressure in the space 33 within the gate valve 15 can be measured.

Further, according to the present embodiment, when the first pressure and the second pressure become equal, the second gas flow rate is changed to a third gas flow rate larger than the first gas flow rate, and , the second exhaust system 42 is shut off and the switchgear is opened. As a result, it is possible to suppress particles from flying up when the gate valve 15 is opened.

Further, according to the present embodiment, the pressure gradient of the first pressure, the second pressure, and the third pressure immediately after opening the switchgear is such that the third pressure is higher than the second pressure, and the second pressure is higher than the second pressure. becomes greater than the first pressure. As a result, corrosive gas can be prevented from entering the transfer chamber 1 side.

Further, according to this embodiment, the pressure difference between the first pressure and the third pressure is within 5 mTorr. As a result, it is possible to suppress particles from flying up when the gate valve 15 is opened.

Further, according to the present embodiment, the vacuum container is a transfer chamber equipped with a transfer device that transfers the substrate PL. As a result, the substrate PL can be carried in and out of the process chamber 8.

Further, according to this embodiment, the internal pressure of the gas diffusion chamber 23 is higher than the first pressure. As a result, residual gas can be prevented from entering the gas diffusion chamber 23.

The embodiments disclosed herein are illustrative in all respects and should not be considered restrictive. The embodiments described above may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

Further, in the embodiment described above, an isolation valve that shuts off or opens is used as the valve of the second exhaust system 42, but the present invention is not limited to this. For example, as the valve of the second exhaust system 42, an APC valve may be used like the first exhaust system 26.

1 Transport chamber 7 Load lock chamber 8, 8a to 8e Process chamber 10 Control device 15 Gate valve 20 First opening 21 First gas supply section 22 Shower plate 22a Through hole 23 Gas diffusion chamber 26 First exhaust system 30 Valve body 40 second opening 41 second gas supply section 42 second exhaust system 100 substrate processing apparatus PL substrate

Claims (9)

A substrate transport method in a substrate processing apparatus, the method comprising:
The substrate processing apparatus includes:
A first gas supply unit having a first opening for loading and unloading a substrate to be processed, a shower plate provided with a plurality of through holes, and a gas diffusion chamber provided therein, and a first exhaust system. a processing container having;
a vacuum container having a second opening for loading and unloading the substrate, a second gas supply section, and a second exhaust system;
an opening/closing device having a shield interposed between the processing container and the vacuum container and communicating or blocking the first opening and the second opening;
The pressure that permits opening of the switchgear is defined as an opening pressure,
supplying a processing gas from the first gas supply section into the processing container in a state where the opening/closing device is shut off, and performing processing on the substrate disposed inside the processing container;
The supply of the processing gas is stopped, and while the first purge gas is being supplied from the first gas supply section at a first gas flow rate inside the processing container, the first purge gas is removed by the first exhaust system. and adjusting a first pressure inside the processing container to the opening pressure;
Inside the vacuum container, the second purge gas is exhausted by the second exhaust system while supplying a second purge gas at a second gas flow rate from the second gas supply section, and the second purge gas is exhausted from the inside of the switchgear. a step of adjusting either or both of a second pressure on the vacuum container side of the shield and a third pressure inside the vacuum container to the opening pressure;
When the first pressure and the second pressure or the third pressure become equal, the second gas flow rate is changed to a third gas flow rate that is larger than the first gas flow rate. and a step of shutting off the second exhaust system and opening the switchgear;
transferring the substrate from the processing container to the vacuum container via the first opening and the second opening;
A substrate transport method having the following. The first pressure is measured with a first pressure gauge provided in the processing container,
The second pressure is measured with a second pressure gauge provided in the switchgear,
The third pressure is measured with a third pressure gauge provided in the vacuum container.
The substrate transport method according to claim 1. The second pressure is the second pressure attached to the casing in the opening/closing device which is a gate valve composed of a valve body which is the shielding body and a casing that accommodates the valve body. measure with a meter,
The substrate transport method according to claim 2. The step of opening the opening/closing device includes changing the second gas flow rate to a third gas flow rate larger than the first gas flow rate when the first pressure and the second pressure become equal. and shutting off the second exhaust system and opening the switchgear.
The substrate transport method according to any one of claims 1 to 3. The pressure gradient of the first pressure, the second pressure, and the third pressure immediately after opening the switching device is such that the third pressure is higher than the second pressure, and the second pressure is higher than the second pressure. greater than the first pressure;
The substrate transport method according to any one of claims 1 to 4. The pressure difference between the first pressure and the third pressure is within 5 mTorr.
The substrate transport method according to claim 5. The vacuum container is a transfer chamber equipped with a transfer device that transfers the substrate.
The substrate transport method according to any one of claims 1 to 6. The gas diffusion chamber has an internal pressure higher than the first pressure.
The substrate transport method according to any one of claims 1 to 7. A substrate processing device,
A first gas supply unit having a first opening for loading and unloading a substrate to be processed, a shower plate provided with a plurality of through holes, and a gas diffusion chamber provided therein, and a first exhaust system. a processing container having;
a vacuum container having a second opening for loading and unloading the substrate, a second gas supply section, and a second exhaust system;
an opening/closing device having a shield interposed between the processing container and the vacuum container and communicating or blocking the first opening and the second opening;
A pressure that permits opening of the opening/closing device is set as an opening pressure, and with the opening/closing device being shut off, a processing gas is supplied from the first gas supply section to the inside of the processing container, and the processing gas is placed inside the processing container. a step of performing processing on the substrate, and a step of stopping the supply of the processing gas, and supplying the first purge gas at a first gas flow rate from the first gas supply section inside the processing container; exhausting the first purge gas by a first exhaust system and adjusting the first pressure inside the processing container to the opening pressure; The second purge gas is exhausted by the second exhaust system while supplying the second purge gas at a second gas flow rate; and a step of adjusting one or both of the pressure and a third pressure inside the vacuum container to the opening pressure, and the first pressure, the second pressure, or the third pressure are adjusted to the opening pressure. when the second gas flow rate is equal to the first gas flow rate, changing the second gas flow rate to a third gas flow rate larger than the first gas flow rate, shutting off the second exhaust system, and opening the switchgear; , a control unit that executes a step of transferring the substrate from the processing container to the vacuum container via the first opening and the second opening;
A substrate processing apparatus having:

Images