JP7337618B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7337618B2 JP7337618B2 JP2019168195A JP2019168195A JP7337618B2 JP 7337618 B2 JP7337618 B2 JP 7337618B2 JP 2019168195 A JP2019168195 A JP 2019168195A JP 2019168195 A JP2019168195 A JP 2019168195A JP 7337618 B2 JP7337618 B2 JP 7337618B2
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- 239000004065 semiconductor Substances 0.000 title claims description 60
- 239000003990 capacitor Substances 0.000 claims description 54
- 230000015556 catabolic process Effects 0.000 claims description 8
- 230000003071 parasitic effect Effects 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009499 grossing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Description
本実施形態の半導体装置は、第1電極と、第2電極と、第1制御電極と、を有するノーマリーオフトランジスタと、第2電極に電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、第1制御電極に電気的に接続された第1端部と、第1電極に電気的に接続された第2端部と、を有し、第1容量成分を含む第1素子と、第1制御電極及び第1端部に電気的に接続された第3端部と、第4端部と、を有し、第2容量成分を含む第2素子と、を備え、ノーマリーオフトランジスタの閾値電圧をVth、ノーマリーオフトランジスタの最大ゲート定格電圧をVg_max、第4端部の電圧をVg_on、第1容量成分をCa、第2容量成分をCbとしたときに、Vth<(Cb/(Ca+Cb))Vg_on<Vg_maxである。
本実施形態の半導体装置においては、第1素子1は、第1アノード51と、第1カソード52と、を有し、第1接合容量Cxを含む第1ツェナーダイオード50である。第1端部2は第1カソード52であり、第2端部3は第1アノード51であり、第1容量成分Caは第1接合容量Cxである。また、第2素子5は、第2アノード61と、第2カソード62と、を有し、第2接合容量Cyを含む第2ツェナーダイオード60であり、第3端部6は第2アノード61であり、第4端部7は第2カソード62であり、第2容量成分Cbは第2接合容量Cyである。
本実施形態の半導体装置は、第1コンデンサ30に対し第1ツェナーダイオード50が並列に接続されている点と、第2コンデンサ40に対し第2ツェナーダイオード60が並列に接続されている点で、第1実施形態と異なっている。
2 第1端部
3 第2端部
5 第2素子
6 第3端部
7 第4端部
10 ノーマリーオフトランジスタ
11 第1電極
12 第2電極
13 第1制御電極
20 ノーマリーオントランジスタ
21 第3電極
22 第4電極
23 第2制御電極
30 第1コンデンサ
31 第5端部
32 第6端部
40 第2コンデンサ
41 第7端部
42 第8端部
50 第1ツェナーダイオード
51 第1アノード
52 第1カソード
60 第2ツェナーダイオード
61 第2アノード
62 第2カソード
70 第3ダイオード
71 アノード
72 カソード
75 抵抗
76 端部
77 端部
80 第1ダイオード
81 アノード
82 カソード
85 第3コンデンサ
86 端部
87 端部
90 第2ダイオード
91 アノード
92 カソード
100 半導体装置
110 半導体装置
120 半導体装置
Claims (4)
- 第1電極と、第2電極と、第1制御電極と、を有するノーマリーオフトランジスタと、
前記第2電極に電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、
前記第1制御電極に電気的に接続された第1端部と、前記第1電極に電気的に接続された第2端部と、を有し、第1容量を含む第1コンデンサと、
前記第1端部に電気的に接続された第1カソードと、前記第2端部に電気的に接続された第1アノードと、を有し、前記第1コンデンサに並列に接続され、第1接合容量を有する第1ツェナーダイオードと、
前記第1制御電極及び前記第1端部に電気的に接続された第3端部と、第4端部と、を有し、第2容量を含む第2コンデンサと、
前記第3端部に電気的に接続された第2アノードと、前記第4端部に電気的に接続された第2カソードと、を有し、前記第2コンデンサに並列に接続され、第2接合容量を有する第2ツェナーダイオードと、
前記第2制御電極に電気的に接続された第3アノードと、前記第3電極に電気的に接続された第3カソードと、を有する第1ダイオードと、
前記第2制御電極に電気的に接続された第4アノードと、第4カソードと、を有する第2ダイオードと、
前記第4アノードに電気的に接続された第9端部と、前記第4カソードに電気的に接続された第10端部と、を有し前記第2ダイオードに並列に接続された第3コンデンサと、
前記第4端部に電気的に接続された第5カソードと、第5アノードと、を有する第3ダイオードと、
前記第5カソードに電気的に接続された第11端部と、前記第5アノードに電気的に接続された第12端部と、を有し前記第3ダイオードに並列に接続された抵抗と、
を備え、
前記ノーマリーオフトランジスタの閾値電圧をVth、前記ノーマリーオフトランジスタの最大ゲート定格電圧をVg_max、前記第4端部の電圧をVg_on、前記第1容量をCa、前記第2容量をCbとしたときに、
Vth<(Cb/(Ca+Cb))Vg_on<Vg_max
である半導体装置。 - 前記第1ツェナーダイオードの第1降伏電圧をVz(D1)としたときに、
Vz(D1)<Vg_max
である請求項1記載の半導体装置。 - 前記第2ツェナーダイオードの第2降伏電圧をVz(D2)としたときに、
Vz(D2)<Vg_on-Vth
である請求項1又は請求項2記載の半導体装置。 - 前記第1容量は、前記ノーマリーオフトランジスタの寄生容量C gs1 よりも10倍以上大きい、
請求項1乃至請求項3いずれか一項記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019168195A JP7337618B2 (ja) | 2019-09-17 | 2019-09-17 | 半導体装置 |
US16/745,457 US11264899B2 (en) | 2019-09-17 | 2020-01-17 | Semiconductor device |
CN202010057939.7A CN112532220A (zh) | 2019-09-17 | 2020-01-19 | 半导体装置 |
US17/578,882 US20220140731A1 (en) | 2019-09-17 | 2022-01-19 | Semiconductor device |
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JP2019168195A JP7337618B2 (ja) | 2019-09-17 | 2019-09-17 | 半導体装置 |
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JP2021048436A JP2021048436A (ja) | 2021-03-25 |
JP7337618B2 true JP7337618B2 (ja) | 2023-09-04 |
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US (2) | US11264899B2 (ja) |
JP (1) | JP7337618B2 (ja) |
CN (1) | CN112532220A (ja) |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004187387A (ja) | 2002-12-02 | 2004-07-02 | Fujitsu Access Ltd | Dc−dcコンバータ |
JP2014187726A (ja) | 2013-03-21 | 2014-10-02 | Toshiba Corp | 半導体装置 |
JP2014512765A5 (ja) | 2012-03-22 | 2015-05-07 | ||
JP2015115608A (ja) | 2013-12-09 | 2015-06-22 | インターナショナル・レクティファイアー・コーポレーションInternational Rectifier Corporation | ノーマリオフ複合パワーデバイスおよびモノリシック集積ノーマリオフ複合パワーデバイス |
JP2016208080A (ja) | 2015-04-15 | 2016-12-08 | 株式会社東芝 | スイッチングユニット及び電源回路 |
JP2017010554A (ja) | 2015-06-25 | 2017-01-12 | 株式会社リコー | 曲線検出方法と曲線検出装置 |
JP2017183979A (ja) | 2016-03-30 | 2017-10-05 | ローム株式会社 | ゲート駆動回路 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0378313A (ja) * | 1989-08-21 | 1991-04-03 | Seiko Epson Corp | Mos―電界効果トランジスタ駆動回路 |
JP5012930B2 (ja) | 2010-02-15 | 2012-08-29 | 株式会社デンソー | ハイブリッドパワーデバイス |
JP5197658B2 (ja) * | 2010-03-10 | 2013-05-15 | 株式会社東芝 | 駆動回路 |
JP5597581B2 (ja) * | 2011-03-23 | 2014-10-01 | 株式会社東芝 | 窒化物半導体装置及びその製造方法 |
US20120262220A1 (en) * | 2011-04-13 | 2012-10-18 | Semisouth Laboratories, Inc. | Cascode switches including normally-off and normally-on devices and circuits comprising the switches |
JP6223729B2 (ja) * | 2013-06-25 | 2017-11-01 | 株式会社東芝 | 半導体装置 |
CN108988836B (zh) * | 2013-12-16 | 2023-02-28 | 台达电子企业管理(上海)有限公司 | 控制方法及功率电路的封装结构 |
JP6223918B2 (ja) * | 2014-07-07 | 2017-11-01 | 株式会社東芝 | 半導体装置 |
WO2017009990A1 (ja) * | 2015-07-15 | 2017-01-19 | 株式会社 東芝 | 半導体装置 |
JP6356718B2 (ja) * | 2016-03-14 | 2018-07-11 | 株式会社東芝 | 半導体装置 |
JP6645924B2 (ja) * | 2016-07-12 | 2020-02-14 | 株式会社東芝 | 半導体装置及び電力変換装置 |
JP2018042188A (ja) * | 2016-09-09 | 2018-03-15 | 株式会社東芝 | スイッチングユニットおよび電源回路 |
JP6732643B2 (ja) | 2016-11-29 | 2020-07-29 | ニチコン株式会社 | スイッチング電源装置 |
JP6822907B2 (ja) * | 2017-06-26 | 2021-01-27 | 株式会社東芝 | 半導体装置、電力変換装置、駆動装置、車両、及び、昇降機 |
US10826485B2 (en) * | 2018-12-17 | 2020-11-03 | Analog Devices International Unlimited Company | Cascode compound switch slew rate control |
US20200195246A1 (en) * | 2018-12-17 | 2020-06-18 | Analog Devices International Unlimited Company | Compound switch with jfet cascode gate forward-biasing control |
-
2019
- 2019-09-17 JP JP2019168195A patent/JP7337618B2/ja active Active
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2020
- 2020-01-17 US US16/745,457 patent/US11264899B2/en active Active
- 2020-01-19 CN CN202010057939.7A patent/CN112532220A/zh active Pending
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2022
- 2022-01-19 US US17/578,882 patent/US20220140731A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004187387A (ja) | 2002-12-02 | 2004-07-02 | Fujitsu Access Ltd | Dc−dcコンバータ |
JP2014512765A5 (ja) | 2012-03-22 | 2015-05-07 | ||
JP2014187726A (ja) | 2013-03-21 | 2014-10-02 | Toshiba Corp | 半導体装置 |
JP2015115608A (ja) | 2013-12-09 | 2015-06-22 | インターナショナル・レクティファイアー・コーポレーションInternational Rectifier Corporation | ノーマリオフ複合パワーデバイスおよびモノリシック集積ノーマリオフ複合パワーデバイス |
JP2016208080A (ja) | 2015-04-15 | 2016-12-08 | 株式会社東芝 | スイッチングユニット及び電源回路 |
JP2017010554A (ja) | 2015-06-25 | 2017-01-12 | 株式会社リコー | 曲線検出方法と曲線検出装置 |
JP2017183979A (ja) | 2016-03-30 | 2017-10-05 | ローム株式会社 | ゲート駆動回路 |
Also Published As
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US11264899B2 (en) | 2022-03-01 |
US20210083577A1 (en) | 2021-03-18 |
CN112532220A (zh) | 2021-03-19 |
US20220140731A1 (en) | 2022-05-05 |
JP2021048436A (ja) | 2021-03-25 |
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