JP7328221B2 - 三次元集積回路 - Google Patents

三次元集積回路 Download PDF

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JP7328221B2
JP7328221B2 JP2020529407A JP2020529407A JP7328221B2 JP 7328221 B2 JP7328221 B2 JP 7328221B2 JP 2020529407 A JP2020529407 A JP 2020529407A JP 2020529407 A JP2020529407 A JP 2020529407A JP 7328221 B2 JP7328221 B2 JP 7328221B2
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layer
substrate
layers
dielectric
oxide
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JP2021506106A (ja
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イー． フォン，テオドール
アイ． カレント，マイケル
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シリコン ジェネシス コーポレーション
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Priority claimed from US15/829,442 external-priority patent/US10049915B2/en
Priority claimed from US15/899,622 external-priority patent/US20180175008A1/en
Priority claimed from US16/057,747 external-priority patent/US10573627B2/en
Application filed by シリコン ジェネシス コーポレーション filed Critical シリコン ジェネシス コーポレーション
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L24/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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US15/829,442 2017-12-01
US15/829,442 US10049915B2 (en) 2015-01-09 2017-12-01 Three dimensional integrated circuit
US15/899,622 2018-02-20
US15/899,622 US20180175008A1 (en) 2015-01-09 2018-02-20 Three dimensional integrated circuit
US16/057,747 2018-08-07
US16/057,747 US10573627B2 (en) 2015-01-09 2018-08-07 Three dimensional integrated circuit
PCT/US2018/063328 WO2019108945A1 (fr) 2017-12-01 2018-11-30 Circuit intégré tridimensionnel

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