TWI716864B - 三維積體電路之形成方法 - Google Patents

三維積體電路之形成方法 Download PDF

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TWI716864B
TWI716864B TW108115449A TW108115449A TWI716864B TW I716864 B TWI716864 B TW I716864B TW 108115449 A TW108115449 A TW 108115449A TW 108115449 A TW108115449 A TW 108115449A TW I716864 B TWI716864 B TW I716864B
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Taiwan
Prior art keywords
substrate
layer
dielectric
split
die
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TW108115449A
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English (en)
Chinese (zh)
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TW201933585A (zh
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席爾多Ｅ 馮
麥克Ｉ 古倫
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美商矽基因股份有限公司
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Priority claimed from US15/829,442 external-priority patent/US10049915B2/en
Priority claimed from US15/899,622 external-priority patent/US20180175008A1/en
Priority claimed from US16/057,747 external-priority patent/US10573627B2/en
Application filed by 美商矽基因股份有限公司 filed Critical 美商矽基因股份有限公司
Publication of TW201933585A publication Critical patent/TW201933585A/zh
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    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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US15/899,622 US20180175008A1 (en) 2015-01-09 2018-02-20 Three dimensional integrated circuit
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