EP3718134A4 - Circuit intégré tridimensionnel - Google Patents
Circuit intégré tridimensionnel Download PDFInfo
- Publication number
- EP3718134A4 EP3718134A4 EP18883845.2A EP18883845A EP3718134A4 EP 3718134 A4 EP3718134 A4 EP 3718134A4 EP 18883845 A EP18883845 A EP 18883845A EP 3718134 A4 EP3718134 A4 EP 3718134A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- integrated circuit
- dimensional integrated
- dimensional
- circuit
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/829,442 US10049915B2 (en) | 2015-01-09 | 2017-12-01 | Three dimensional integrated circuit |
US15/899,622 US20180175008A1 (en) | 2015-01-09 | 2018-02-20 | Three dimensional integrated circuit |
US16/057,747 US10573627B2 (en) | 2015-01-09 | 2018-08-07 | Three dimensional integrated circuit |
PCT/US2018/063328 WO2019108945A1 (fr) | 2017-12-01 | 2018-11-30 | Circuit intégré tridimensionnel |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3718134A1 EP3718134A1 (fr) | 2020-10-07 |
EP3718134A4 true EP3718134A4 (fr) | 2021-09-01 |
Family
ID=66665302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18883845.2A Pending EP3718134A4 (fr) | 2017-12-01 | 2018-11-30 | Circuit intégré tridimensionnel |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP3718134A4 (fr) |
JP (1) | JP7328221B2 (fr) |
KR (1) | KR102578576B1 (fr) |
CN (1) | CN111684581B (fr) |
TW (2) | TWM588362U (fr) |
WO (1) | WO2019108945A1 (fr) |
Families Citing this family (13)
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CN113167938A (zh) | 2018-10-22 | 2021-07-23 | 加州理工学院 | 基于三维工程材料的彩色多光谱图像传感器 |
US11127595B2 (en) | 2019-09-19 | 2021-09-21 | Microsoft Technology Licensing, Llc | Method for bonding a semiconductor substrate to a carrier |
KR20220083736A (ko) * | 2019-10-18 | 2022-06-20 | 캘리포니아 인스티튜트 오브 테크놀로지 | 메타물질 컬러 분할 기능을 구비한 cmos 컬러 이미지 센서들 |
US20210125910A1 (en) * | 2019-10-25 | 2021-04-29 | Nanya Technology Corporation | Semiconductor structure |
JP2022528073A (ja) * | 2020-02-17 | 2022-06-08 | 長江存儲科技有限責任公司 | ハイブリッドウェハ接合方法およびその構造 |
DE102020116340B4 (de) * | 2020-02-27 | 2025-01-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gestapelter bildsensorvorrichtung und deren herstellungsverfahren |
US11594571B2 (en) | 2020-02-27 | 2023-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stacked image sensor device and method of forming same |
WO2022087894A1 (fr) * | 2020-10-28 | 2022-05-05 | 华为技术有限公司 | Structure d'encapsulation multipuce, procédé de fabrication et dispositif électronique |
JP7615657B2 (ja) | 2020-12-18 | 2025-01-17 | 株式会社村田製作所 | 半導体装置 |
US20220310678A1 (en) * | 2021-03-26 | 2022-09-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | High reflectance isolation structure to increase image sensor performance |
US20230260942A1 (en) * | 2022-02-16 | 2023-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond routing structure for stacked wafers |
CN114927538B (zh) * | 2022-07-20 | 2022-11-11 | 合肥晶合集成电路股份有限公司 | 晶圆键合方法以及背照式图像传感器的形成方法 |
CN116435258B (zh) * | 2023-06-13 | 2023-09-26 | 中诚华隆计算机技术有限公司 | 一种芯片的封装方法及其封装结构 |
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US6120597A (en) * | 1998-02-17 | 2000-09-19 | The Trustees Of Columbia University In The City Of New York | Crystal ion-slicing of single-crystal films |
US6346459B1 (en) * | 1999-02-05 | 2002-02-12 | Silicon Wafer Technologies, Inc. | Process for lift off and transfer of semiconductor devices onto an alien substrate |
US20170301657A1 (en) * | 2015-01-09 | 2017-10-19 | Silicon Genesis Corporation | Three dimensional integrated circuit |
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FR2758907B1 (fr) | 1997-01-27 | 1999-05-07 | Commissariat Energie Atomique | Procede d'obtention d'un film mince, notamment semiconducteur, comportant une zone protegee des ions, et impliquant une etape d'implantation ionique |
US5985742A (en) | 1997-05-12 | 1999-11-16 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films |
US6573565B2 (en) * | 1999-07-28 | 2003-06-03 | International Business Machines Corporation | Method and structure for providing improved thermal conduction for silicon semiconductor devices |
US6764898B1 (en) * | 2002-05-16 | 2004-07-20 | Advanced Micro Devices, Inc. | Implantation into high-K dielectric material after gate etch to facilitate removal |
US20050104027A1 (en) * | 2003-10-17 | 2005-05-19 | Lazarev Pavel I. | Three-dimensional integrated circuit with integrated heat sinks |
JP4219838B2 (ja) | 2004-03-24 | 2009-02-04 | シャープ株式会社 | 半導体基板の製造方法、並びに半導体装置の製造方法 |
KR100972213B1 (ko) * | 2005-12-27 | 2010-07-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Soi 웨이퍼의 제조 방법 및 soi 웨이퍼 |
KR100809696B1 (ko) * | 2006-08-08 | 2008-03-06 | 삼성전자주식회사 | 사이즈가 상이한 복수의 반도체 칩이 적층된 멀티 칩패키지 및 그 제조방법 |
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JP5927894B2 (ja) * | 2011-12-15 | 2016-06-01 | 信越半導体株式会社 | Soiウェーハの製造方法 |
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US10049915B2 (en) * | 2015-01-09 | 2018-08-14 | Silicon Genesis Corporation | Three dimensional integrated circuit |
US9691780B2 (en) * | 2015-09-25 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interdigitated capacitor in split-gate flash technology |
TWI591806B (zh) * | 2016-04-12 | 2017-07-11 | 旺宏電子股份有限公司 | 記憶體結構及其製造方法 |
KR20170130009A (ko) * | 2016-05-17 | 2017-11-28 | 삼성전자주식회사 | 3차원 반도체 장치 |
-
2018
- 2018-11-30 WO PCT/US2018/063328 patent/WO2019108945A1/fr unknown
- 2018-11-30 CN CN201880088450.7A patent/CN111684581B/zh active Active
- 2018-11-30 TW TW107216360U patent/TWM588362U/zh unknown
- 2018-11-30 JP JP2020529407A patent/JP7328221B2/ja active Active
- 2018-11-30 TW TW108115449A patent/TWI716864B/zh active
- 2018-11-30 EP EP18883845.2A patent/EP3718134A4/fr active Pending
- 2018-11-30 KR KR1020207019044A patent/KR102578576B1/ko active IP Right Grant
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US6120597A (en) * | 1998-02-17 | 2000-09-19 | The Trustees Of Columbia University In The City Of New York | Crystal ion-slicing of single-crystal films |
US6346459B1 (en) * | 1999-02-05 | 2002-02-12 | Silicon Wafer Technologies, Inc. | Process for lift off and transfer of semiconductor devices onto an alien substrate |
US20170301657A1 (en) * | 2015-01-09 | 2017-10-19 | Silicon Genesis Corporation | Three dimensional integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
JP7328221B2 (ja) | 2023-08-16 |
TWM588362U (zh) | 2019-12-21 |
CN111684581B (zh) | 2024-08-13 |
EP3718134A1 (fr) | 2020-10-07 |
KR102578576B1 (ko) | 2023-09-15 |
TW201933585A (zh) | 2019-08-16 |
WO2019108945A1 (fr) | 2019-06-06 |
KR20200099156A (ko) | 2020-08-21 |
TWI716864B (zh) | 2021-01-21 |
JP2021506106A (ja) | 2021-02-18 |
CN111684581A (zh) | 2020-09-18 |
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