JP7325301B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP7325301B2
JP7325301B2 JP2019200072A JP2019200072A JP7325301B2 JP 7325301 B2 JP7325301 B2 JP 7325301B2 JP 2019200072 A JP2019200072 A JP 2019200072A JP 2019200072 A JP2019200072 A JP 2019200072A JP 7325301 B2 JP7325301 B2 JP 7325301B2
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Prior art keywords
gate
insulating film
trench
electrode
gate electrode
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JP2019200072A
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English (en)
Japanese (ja)
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JP2021072418A5 (https=
JP2021072418A (ja
Inventor
康一 西
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2019200072A priority Critical patent/JP7325301B2/ja
Priority to US16/943,527 priority patent/US11374119B2/en
Priority to DE102020126641.3A priority patent/DE102020126641A1/de
Priority to CN202011163257.0A priority patent/CN112786691A/zh
Publication of JP2021072418A publication Critical patent/JP2021072418A/ja
Publication of JP2021072418A5 publication Critical patent/JP2021072418A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/051—Manufacture or treatment of isolation region based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/50—Isolation regions based on field-effect

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  • Electrodes Of Semiconductors (AREA)
JP2019200072A 2019-11-01 2019-11-01 半導体装置およびその製造方法 Active JP7325301B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019200072A JP7325301B2 (ja) 2019-11-01 2019-11-01 半導体装置およびその製造方法
US16/943,527 US11374119B2 (en) 2019-11-01 2020-07-30 Semiconductor device and method of manufacturing the same
DE102020126641.3A DE102020126641A1 (de) 2019-11-01 2020-10-12 Halbleitervorrichtung und Verfahren zu deren Herstellung
CN202011163257.0A CN112786691A (zh) 2019-11-01 2020-10-27 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019200072A JP7325301B2 (ja) 2019-11-01 2019-11-01 半導体装置およびその製造方法

Publications (3)

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JP2021072418A JP2021072418A (ja) 2021-05-06
JP2021072418A5 JP2021072418A5 (https=) 2021-12-09
JP7325301B2 true JP7325301B2 (ja) 2023-08-14

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US (1) US11374119B2 (https=)
JP (1) JP7325301B2 (https=)
CN (1) CN112786691A (https=)
DE (1) DE102020126641A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7438080B2 (ja) * 2020-10-30 2024-02-26 三菱電機株式会社 半導体装置
JP7607538B2 (ja) * 2021-09-14 2024-12-27 三菱電機株式会社 半導体装置
CN114566542B (zh) * 2022-03-01 2026-03-06 绍兴中芯集成电路制造股份有限公司 屏蔽栅沟槽型场效应晶体管及其制作方法
JP7801977B2 (ja) * 2022-09-08 2026-01-19 ルネサスエレクトロニクス株式会社 半導体装置
CN115377213B (zh) * 2022-10-25 2023-02-28 烟台台芯电子科技有限公司 一种沟槽型半导体装置及其制作方法
JP2024075884A (ja) 2022-11-24 2024-06-05 三菱電機株式会社 半導体装置
JP2026044305A (ja) 2024-08-30 2026-03-12 三菱電機株式会社 半導体装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093506A (ja) 2004-09-27 2006-04-06 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法
JP2010135677A (ja) 2008-12-08 2010-06-17 Denso Corp 半導体装置
JP2013058575A (ja) 2011-09-07 2013-03-28 Toshiba Corp 半導体装置及びその製造方法
JP2013201400A (ja) 2012-03-26 2013-10-03 Toshiba Corp 半導体装置及びその製造方法
JP2015142073A (ja) 2014-01-30 2015-08-03 サンケン電気株式会社 半導体装置
US20160064546A1 (en) 2014-08-29 2016-03-03 Freescale Semiconductor, Inc. Edge termination for trench gate fet
JP2016167539A (ja) 2015-03-10 2016-09-15 株式会社東芝 半導体装置
WO2017099096A1 (ja) 2015-12-11 2017-06-15 富士電機株式会社 半導体装置
JP2017147431A (ja) 2016-02-12 2017-08-24 富士電機株式会社 半導体装置
JP2017162909A (ja) 2016-03-08 2017-09-14 株式会社東芝 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9029215B2 (en) * 2012-05-14 2015-05-12 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device having a shield electrode structure
JP6144510B2 (ja) * 2013-03-11 2017-06-07 三菱電機株式会社 半導体装置の製造方法
US9269779B2 (en) * 2014-07-21 2016-02-23 Semiconductor Components Industries, Llc Insulated gate semiconductor device having a shield electrode structure
WO2016014224A1 (en) * 2014-07-25 2016-01-28 United Silicon Carbide, Inc. Self-aligned shielded-gate trench mos-controlled silicon carbide switch with reduced miller capacitance and method of manufacturing the same
JP6478316B2 (ja) * 2014-11-10 2019-03-06 ローム株式会社 トレンチゲート構造を備えた半導体装置およびその製造方法
DE102014119543B4 (de) 2014-12-23 2018-10-11 Infineon Technologies Ag Halbleitervorrichtung mit transistorzellen und anreicherungszellen sowie leistungsmodul
JP7250473B2 (ja) * 2018-10-18 2023-04-03 三菱電機株式会社 半導体装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093506A (ja) 2004-09-27 2006-04-06 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法
JP2010135677A (ja) 2008-12-08 2010-06-17 Denso Corp 半導体装置
JP2013058575A (ja) 2011-09-07 2013-03-28 Toshiba Corp 半導体装置及びその製造方法
JP2013201400A (ja) 2012-03-26 2013-10-03 Toshiba Corp 半導体装置及びその製造方法
JP2015142073A (ja) 2014-01-30 2015-08-03 サンケン電気株式会社 半導体装置
US20160064546A1 (en) 2014-08-29 2016-03-03 Freescale Semiconductor, Inc. Edge termination for trench gate fet
JP2016167539A (ja) 2015-03-10 2016-09-15 株式会社東芝 半導体装置
WO2017099096A1 (ja) 2015-12-11 2017-06-15 富士電機株式会社 半導体装置
JP2017147431A (ja) 2016-02-12 2017-08-24 富士電機株式会社 半導体装置
JP2017162909A (ja) 2016-03-08 2017-09-14 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
DE102020126641A1 (de) 2021-05-06
JP2021072418A (ja) 2021-05-06
US11374119B2 (en) 2022-06-28
CN112786691A (zh) 2021-05-11
US20210134990A1 (en) 2021-05-06

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