CN112786691A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN112786691A
CN112786691A CN202011163257.0A CN202011163257A CN112786691A CN 112786691 A CN112786691 A CN 112786691A CN 202011163257 A CN202011163257 A CN 202011163257A CN 112786691 A CN112786691 A CN 112786691A
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CN
China
Prior art keywords
gate
trench
insulating film
electrode
gate trench
Prior art date
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Pending
Application number
CN202011163257.0A
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English (en)
Chinese (zh)
Inventor
西康一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN112786691A publication Critical patent/CN112786691A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/051—Manufacture or treatment of isolation region based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/50—Isolation regions based on field-effect

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  • Electrodes Of Semiconductors (AREA)
CN202011163257.0A 2019-11-01 2020-10-27 半导体装置及其制造方法 Pending CN112786691A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019200072A JP7325301B2 (ja) 2019-11-01 2019-11-01 半導体装置およびその製造方法
JP2019-200072 2019-11-01

Publications (1)

Publication Number Publication Date
CN112786691A true CN112786691A (zh) 2021-05-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011163257.0A Pending CN112786691A (zh) 2019-11-01 2020-10-27 半导体装置及其制造方法

Country Status (4)

Country Link
US (1) US11374119B2 (https=)
JP (1) JP7325301B2 (https=)
CN (1) CN112786691A (https=)
DE (1) DE102020126641A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114566542A (zh) * 2022-03-01 2022-05-31 绍兴中芯集成电路制造股份有限公司 屏蔽栅沟槽型场效应晶体管及其制作方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7438080B2 (ja) * 2020-10-30 2024-02-26 三菱電機株式会社 半導体装置
JP7607538B2 (ja) * 2021-09-14 2024-12-27 三菱電機株式会社 半導体装置
JP7801977B2 (ja) * 2022-09-08 2026-01-19 ルネサスエレクトロニクス株式会社 半導体装置
CN115377213B (zh) * 2022-10-25 2023-02-28 烟台台芯电子科技有限公司 一种沟槽型半导体装置及其制作方法
JP2024075884A (ja) 2022-11-24 2024-06-05 三菱電機株式会社 半導体装置
JP2026044305A (ja) 2024-08-30 2026-03-12 三菱電機株式会社 半導体装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060065926A1 (en) * 2004-09-27 2006-03-30 Sanyo Electric Co., Ltd. Insulated gate semiconductor device and manufacturing method of the same
CN102983164A (zh) * 2011-09-07 2013-03-20 株式会社东芝 半导体器件及其制造方法
US20130302958A1 (en) * 2012-05-14 2013-11-14 Zia Hossain Method of making an insulated gate semiconductor device having a shield electrode structure
JP2014175517A (ja) * 2013-03-11 2014-09-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
US20160020288A1 (en) * 2014-07-21 2016-01-21 Semiconductor Components Industries, Llc Insulated gate semiconductor device having a shield electrode structure
US20160133742A1 (en) * 2014-11-10 2016-05-12 Rohm Co., Ltd. Semiconductor device having trench gate structure and method for manufacturing the semiconductor device
US20160268181A1 (en) * 2015-03-10 2016-09-15 Kabushiki Kaisha Toshiba Semiconductor device

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Publication number Priority date Publication date Assignee Title
JP5470826B2 (ja) * 2008-12-08 2014-04-16 株式会社デンソー 半導体装置
JP5579216B2 (ja) * 2012-03-26 2014-08-27 株式会社東芝 半導体装置及びその製造方法
JP2015142073A (ja) * 2014-01-30 2015-08-03 サンケン電気株式会社 半導体装置
WO2016014224A1 (en) * 2014-07-25 2016-01-28 United Silicon Carbide, Inc. Self-aligned shielded-gate trench mos-controlled silicon carbide switch with reduced miller capacitance and method of manufacturing the same
US9553184B2 (en) * 2014-08-29 2017-01-24 Nxp Usa, Inc. Edge termination for trench gate FET
DE102014119543B4 (de) 2014-12-23 2018-10-11 Infineon Technologies Ag Halbleitervorrichtung mit transistorzellen und anreicherungszellen sowie leistungsmodul
JP6451869B2 (ja) * 2015-12-11 2019-01-16 富士電機株式会社 半導体装置
JP6844147B2 (ja) * 2016-02-12 2021-03-17 富士電機株式会社 半導体装置
JP6426642B2 (ja) * 2016-03-08 2018-11-21 株式会社東芝 半導体装置
JP7250473B2 (ja) * 2018-10-18 2023-04-03 三菱電機株式会社 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060065926A1 (en) * 2004-09-27 2006-03-30 Sanyo Electric Co., Ltd. Insulated gate semiconductor device and manufacturing method of the same
CN102983164A (zh) * 2011-09-07 2013-03-20 株式会社东芝 半导体器件及其制造方法
US20130302958A1 (en) * 2012-05-14 2013-11-14 Zia Hossain Method of making an insulated gate semiconductor device having a shield electrode structure
JP2014175517A (ja) * 2013-03-11 2014-09-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
US20160020288A1 (en) * 2014-07-21 2016-01-21 Semiconductor Components Industries, Llc Insulated gate semiconductor device having a shield electrode structure
US20160133742A1 (en) * 2014-11-10 2016-05-12 Rohm Co., Ltd. Semiconductor device having trench gate structure and method for manufacturing the semiconductor device
US20160268181A1 (en) * 2015-03-10 2016-09-15 Kabushiki Kaisha Toshiba Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114566542A (zh) * 2022-03-01 2022-05-31 绍兴中芯集成电路制造股份有限公司 屏蔽栅沟槽型场效应晶体管及其制作方法
CN114566542B (zh) * 2022-03-01 2026-03-06 绍兴中芯集成电路制造股份有限公司 屏蔽栅沟槽型场效应晶体管及其制作方法

Also Published As

Publication number Publication date
JP7325301B2 (ja) 2023-08-14
DE102020126641A1 (de) 2021-05-06
JP2021072418A (ja) 2021-05-06
US11374119B2 (en) 2022-06-28
US20210134990A1 (en) 2021-05-06

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